• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Journal of Conservation Science
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• v.28 no.3
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• pp.229-233
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• 2012

This research was to evaluate conservational stability of cleaning treatment and color recovery by weak acid treatment on ivory. Before this experiment, had an ivory identification such as black light and schreger angle to find whether it is authentic or not. In wet cleaning treatment on ivory, used polar solvents such as distilled water, acetone, ethyl alcohol and acetic acid which usually used for cleaning ivory and bones. After cleaning took a experiment to evaluate conservational stability in surface observation, calculate weight and color difference. Following these results, these polar solvents were stable on the ivory samples. On the other hand, in weak acid treatment, used samples that were exposed by UV-A, UV-B, UV-C for 1 weeks, to restore its color from changed to original color. After treatment, found tiny cracks and exfoliation on the surface. Moreover, the color changed when it is treated by lemon juice, so, it is impossible to adapt.

• Journal of the Korean Society of Safety
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• v.35 no.6
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• pp.85-92
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• 2020

Wet Scrubber reacts the incoming pollutant gas with cleaning water (water + absorbent) to absorb pollutants and release the clean air to the atmosphere. Wet scrubbers and packed tower scrubbers using this principle are widely used in businesses that emit acid gases. In particular, in the etching process using hydrochloric acid (HCl), alkaline washing water (NaOH) having a pH of about 8 to 11 is used to absorb a large amount of acid gas. However, These salts are attached to the injection nozzle (nozzle), filling material (packing), and the demister (Demister), causing air pollution, human damage, and inoperability due to clogging and acid gas discharge. Therefore, In this study, an improvement plan was proposed to manage the washing water with pH 3~4 acidic washing water. The test method takes samples from the Wet Scrubber flue measurement laboratory twice a month for 1 year. Hydrogen chloride (HCl) concentration (ppm) was measured, and nozzle clogging and scale conditions were measured, compared, and analyzed through a differential pressure gauge and a pressure gauge. As a result of the check, it was visually confirmed that the scale was reduced to 50% or less in the spray nozzle, filler, and demister. In addition, the emission limit of hydrogen chloride in accordance with the Enforcement Regulation of the Air Quality Conservation Act [Annex 8] met 3 ppm or less. Therefore, even if the washing water is operated in an acidic pH range of 3 to 4, it is expected to reduce air pollution and human damage due to clogging of internal parts, and it is expected to reduce maintenance costs such as regular cleaning or replacement of parts.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2004.04a
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• pp.149-152
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• 2004

Generally the wafer is increased by 300mm. We are desired that the wafer is prevented from pollutions of metal contaminant on surface of wafer. We have to develop new wafer cleaning process of IC Manufacturing that can reduce DI water and chemical by removal of the wafer cleaning process step. Moreover, it is difficult to control temprature and density of chemical in spite of rapidly increasing automation of system. We design smart module controller for new generation of semiconductor wet station with intelligent algorithm using data that is taken by computer simulation for optimal system.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.256-259
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• 2003

To develop cleaning process various particles should be deposited on wafer surfaces to measure particle removal efficiencies. The purpose of the article in to evaluate, removal efficient)r of silica and alumina particles from wafer surfaces when they are deposited by dry and wet method. Dry deposition in air and wet spray deposition using solutions are used. van der Waals are considered to calculate the adhesion force of particles on surfaces. Higher adhesion force is measured on alumina particles on silicon when particles are deposited in air.

• Journal of Industrial Technology
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• v.15
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• pp.175-185
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• 1995

Under the new environmental regulations announced by the government, utilities will have to cut their sulfur dioxide emissions by 60% from 1991 levels by the year of 1999. Sulfur dioxide emissions can be reduced prior to combustion by physical, chemical or biological coal cleaning. The new technology of high gradient magnetic separation (HGMS) offers the potential of economic separatoins of a variety of fine, weakly magnetic minerals including inorganic sulfur and many ash-forming minerals from coals. In the present paper, magnetic separation tests have been conducted on Korean anthracite and high-sulfur Chinese coal to investigate the feasibility of these techniques for reducing sulfur content from coals. In wet magnetic separation, the studied operating parameters include particle size, pH, matrix types, feed solids content, feed rate, number of cleaning stages and etc. The results shows that for wet separation, 60~70% of total sulfur was removed from coals with over 80% combustible recovery, on the other hand, for dry separation, 47.6% of total sulfur was removed from coals with 75% recovery.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.157-162
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• 2005

The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,

• Proceedings of the Korea Information Processing Society Conference
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• 2002.04a
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• pp.631-634
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• 2002

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.