• Maxillofacial Plastic and Reconstructive Surgery
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• v.29 no.6
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• pp.520-526
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• 2007

The accuracy of model surgery is one of important factors which can influence the outcome of orthognathic surgery. To evaluate the accuracy of digitalized model surgery, we tried the model surgery on a software after transferring the mounted model block into a digital model, and compared the results with that of classical manual model surgery. We could get the following results, which can be used as good baseline analysis for the clinical application. 1. We made the 3D scanning of dental model blocks, and mounted on a software. And we performed the model surgery according to the previously arranged surgical plans, and let the rapid prototyping machine produce the surgical wafer. All through these process, we could confirm that the digital model surgery is feasible without difficulties. 2. The digital model surgery group (Group 2) showed a mean error of $0.0{\sim}0.1mm$ for moving the maxillary model block to the target position. And Group 1, which was done by manual model surgery, presented a mean error of $0.1{\sim}1.2mm$, which is definitely greater than those of Group 2. 3. Remounted maxillary model block with the wafers produced by digital model surgery from Group 2 showed the less mean error (0.2 to 0.4 mm) than that produced by manual model surgery in Group 1 (0.3 to 1.4 mm). From these results, we could confirm that the digital model surgery in Group 2 presented less error than manual model surgery of Group 1. And the model surgery by digital manipulation is expected to have less influence from the individual variation or degree of expertness. So the increased accuracy and enhanced manipulability will serve the digital model surgery as the good candidate for the improvement and replacement of the classical model surgery, if careful preparation works for the clinical adjustment is accompanied.

• The KIPS Transactions:PartD
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• v.11D no.3
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• pp.709-716
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• 2004

This paper describes an intelligent real-time monitoring system of a semiconductor processing equipment, which determines normal or not for a wafer in processing, using multiple time-series pattern recognition. The proposed system consists of three phases, initialization, learning and real-time prediction. The initialization phase sets the weights and tile effective steps for all parameters of a monitoring equipment. The learning phase clusters time series patterns, which are producted and fathered for processing wafers by the equipment, using LBG algorithm. Each pattern has an ACI which is measured by a tester at the end of a process The real-time prediction phase corresponds a time series entered by real-time with the clustered patterns using Dynamic Time Warping, and finds the best matched pattern. Then it calculates a predicted ACI from a combination of the ACI, the difference and the weights. Finally it determines Spec in or out for the wafer. The proposed system is tested on the data acquired from etching device. The results show that the error between the estimated ACI and the actual measurement ACI is remarkably reduced according to the number of learning increases.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.376-380
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• 2008

This paper presents the Projection Moire method using a line scan camera. The high resolution feature of a line scan camera makes it possible to scan an image quickly, thus enabling a much quicker 3D profile. This method uses a high resolution line scan camera making it possible to scan an image at high speed simultaneously measuring the 3D profile of a large FOV. When using a high resolution scan camera, a full FOV is scanned, thus requiring just one movement of a projection grating. As a result, the number of grating movements is reduced drastically. The end result is a faster and more accurate 3D measurement. Moving the grating too quickly causes vibration in the imaging system, which will normally be required to apply a stitching technique when using an area scan camera. However the technique is not required when using a line scan camera. Compared with the previous techniques, it has the advantages of simple hardware without moving mechanical parts - single exposure for obtaining three-dimensional information. A method using a high resolution line scan camera can be used in mass production to measure the bump height of wafers or the bump height of package substrates.

• Macromolecular Research
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• v.12 no.1
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• pp.127-133
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• 2004

We have studied the surface micelle formation of polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) at the air-water interface. A series of four PS-b-P2VPs were synthesized by anionic polymerization, keeping the PS block length constant (28 kg/㏖) and varying the P2VP block length (1, 11, 28, or 59 kg/㏖). The surface pressure-area ($\pi$-A) isotherms were measured and the surface morphology was studied by atomic force microscopy (AFM) after Langmuir-Blodgett film deposition onto silicon wafers. At low surface pressure, the hydrophobic PS blocks aggregate to form pancake-like micelle cores and the hydrophilic P2VP block chains spread on the water surface to form a corona-like monolayer. The surface area occupied by a block copolymer is proportional to the molecular weight of the P2VP block and identical to the surface area occupied by a homo-P2VP. It indicates that the entire surface is covered by the P2VP monolayer and the PS micelle cores lie on the P2VP monolayer. As the surface pressure is increased, the $\pi$-A isotherm shows a transition region where the surface pressure does not change much with the film compression. In this transition region, which displays high compressibility, the P2VP blocks restructure from the monolayer and spread at the air-water interface. After the transition, the Langmuir film becomes much less compressible. In this high-surface-pressure regime, the PS cores cover practically the entire surface area, as observed by AFM and the limiting area of the film. All the diblock copolymers formed circular micelles, except for the block copolymer having a very short P2VP block (1 kg/㏖), which formed large, non-uniform PS aggregates. By mixing with the block copolymer having a longer P2VP block (11 kg/㏖), we observed rod-shaped micelles, which indicates that the morphology of the surfaces micelles can be controlled by adjusting the average composition of block copolymers.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Journal of Adhesion and Interface
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• v.11 no.3
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• pp.120-125
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• 2010

UV-curable acrylic Pressure-sensitive adhesives (Acrylic PSAs) are used in many different parts in the world. A wafer manufacture process which is based on semiconductor industry is one thing. We have used acrylic PSAs whose thickness is different from $20{\mu}m$ to $30{\mu}m$ in wafer manufacture process so far. But as wafers become more thinner, acrylic PSAs are supposed to satisfy the requirements such as proper adhesion performance. The main purpose of this research is studying proper adhesion performance and UV-curing behavior of UV-curable acrylic PSAs with very thin thickness and then determining optimized conditions to raise the efficiency of thin wafer production. Acrylic PSAs contain 2-Ethylhexyl Acrylate (2-EHA), Acrylic Acid (AA) and Butyl Acrylate (BA). Ethyl acetate (EtAc) is used as solvent. The acrylic PSAs are obtained using solvent polymerization. Thickness of UV-curable acrylic PSAs is different from $10{\sim}30{\mu}m$. By peel strength and probe tack, adhesion performance and UV curing behavior of acrylic PSA are concerned.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.114-120
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• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.