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http://dx.doi.org/10.5757/JKVS.2010.19.2.114

Study of Low Reflectance and RF Frequency by Rie Surface Texture Process in Multi Crystall Silicon Solar Cells  

Yun, Myoung-Soo (Department of Electrophysics, Kwngwoon University)
Hyun, Deoc-Hwan (Jusung Engineering)
Jin, Beop-Jong (Jusung Engineering)
Choi, Jong-Young (Jusung Engineering)
Kim, Joung-Sik (Jusung Engineering)
Kang, Hyoung-Dong (Jusung Engineering)
Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University)
Kwon, Gi-Chung (Department of Electrophysics, Kwngwoon University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.2, 2010 , pp. 114-120 More about this Journal
Abstract
Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.
Keywords
RIE (reactive ion etching); RF frequency; Texturing; High efficiency; Reflectance;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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