• Title/Summary/Keyword: wafer

Search Result 3,162, Processing Time 0.033 seconds

Repair of Plasma Damaged Low-k Film in Supercritical Carbon Dioxide (초임계이산화탄소를 이용한 플라즈마 손상된 다공성 저유전 막질의 복원)

  • Jung, Jae-Mok;Lim, Kwon-Taek
    • Clean Technology
    • /
    • v.16 no.3
    • /
    • pp.191-197
    • /
    • 2010
  • Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.

Motion Vector Based Overlay Metrology Algorithm for Wafer Alignment (웨이퍼 정렬을 위한 움직임 벡터 기반의 오버레이 계측 알고리즘 )

  • Lee Hyun Chul;Woo Ho Sung
    • KIPS Transactions on Software and Data Engineering
    • /
    • v.12 no.3
    • /
    • pp.141-148
    • /
    • 2023
  • Accurate overlay metrology is essential to achieve high yields of semiconductor products. Overlay metrology performance is greatly affected by overlay target design and measurement method. Therefore, in order to improve the performance of the overlay target, measurement methods applicable to various targets are required. In this study, we propose a new algorithm that can measure image-based overlay. The proposed measurement algorithm can estimate the sub-pixel position by using a motion vector. The motion vector may estimate the position of the sub-pixel unit by applying a quadratic equation model through polynomial expansion using pixels in the selected region. The measurement method using the motion vector can calculate the stacking error in all directions at once, unlike the existing correlation coefficient-based measurement method that calculates the stacking error on the X-axis and the Y-axis, respectively. Therefore, more accurate overlay measurement is possible by reflecting the relationship between the X-axis and the Y-axis. However, since the amount of computation is increased compared to the existing correlation coefficient-based algorithm, more computation time may be required. The purpose of this study is not to present an algorithm improved over the existing method, but to suggest a direction for a new measurement method. Through the experimental results, it was confirmed that measurement results similar to those of the existing method could be obtained.

Magnetic Properties of Heteroepitaxial $Y_{3}Fe_{5)O_{12}$ Films Grown by a Pulsed Laser Ablation Technique (펄스 레이저 증착기술에 의한 $Y_{3}Fe_{5)O_{12}$ 에피택셜 박막제조)

  • Yang, C.J.;Kim, S.W.
    • Journal of the Korean Magnetics Society
    • /
    • v.5 no.2
    • /
    • pp.128-133
    • /
    • 1995
  • Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.

  • PDF

Growth of ring-shaped SiC single crystal via physical vapor transport method (PVT 방법에 의한 링 모양의 SiC 단결정 성장)

  • Kim, Woo-Yeon;Je, Tae-Wan;Na, Jun-Hyuck;Choi, Su-Min;Lee, Ha-Lin;Jang, Hui-Yeon;Park, Mi-Seon;Jang, Yeon-Suk;Jung, Eun-Jin;Kang, Jin-Ki;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.32 no.1
    • /
    • pp.1-6
    • /
    • 2022
  • In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

Effects of Dielectric Curing Temperature and T/H Treatment on the Interfacial Adhesion Energies of Ti/PBO for Cu RDL Applications of FOWLP (FOWLP Cu 재배선 적용을 위한 절연층 경화 온도 및 고온/고습 처리가 Ti/PBO 계면접착에너지에 미치는 영향)

  • Kirak Son;Gahui Kim;Young-Bae Park
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.30 no.2
    • /
    • pp.52-59
    • /
    • 2023
  • The effects of dielectric curing temperature and temperature/humidity treatment conditions on the interfacial adhesion energies between Ti diffusion barrier/polybenzoxazole (PBO) dielectric layers were systematically investigated for Cu redistribution layer applications of fan-out wafer level package. The initial interfacial adhesion energies were 16.63, 25.95, 16.58 J/m2 for PBO curing temperatures at 175, 200, and 225 ℃, respectively. X-ray photoelectron spectroscopy analysis showed that there exists a good correlation between the interfacial adhesion energy and the C-O peak area fractions at PBO delaminated surfaces. And the interfacial adhesion energies of samples cured at 200 ℃ decreased to 3.99 J/m2 after 500 h at 85 ℃/85 % relative humidity, possibly due to the weak boundary layer formation inside PBO near Ti/PBO interface.

Quantitative analysis of hydrogen in thin film by scattering-recoil co-measurement technique (산란-되튐 동시 측정 방법에 의한 박막 중 수소 정량법)

  • Lee, Hwa-Ryun;Eum, Chul Hun;Choi, Han-Woo;Kim, Joonkon
    • Analytical Science and Technology
    • /
    • v.19 no.5
    • /
    • pp.400-406
    • /
    • 2006
  • Hydrogen analysis by elastic recoil detection has been performed utilizing polyimide film as a reference sample of known hydrogen content assuming the soundness of ion beam current integration. However beam current integration at higher incidence angle is not reliable. Scattering yield per unit fluence by current integration which is normalized per unit path length decreases as the sample tilt angle is getting higher. Moreover because beam current integration at high tilt angle is incomplete, hydrogen evaluation is very risky by direct comparison of sequentially collected recoil spectra between reference and target sample. In this study, primary ion beam dose is determined by backscattering spectrum that is collected simultaneously with recoil spectrum instead of ion beam current integration in order to reduce uncertainty arising in the process of current integration and to enhance the reliability of quantitative analysis. Three test samples are selected $-7.6{\mu}m$ polyimide film, hydrogen implanted silicondioxide and Au deposited carbon wafer- and analyzed by two methods and compared.

Synthesis of Pressure-sensitive Acrylic Adhesives with Photoreactive Groups and Their Application to Semiconductor Dicing Tapes (광 반응성기를 갖는 아크릴 점착제의 합성과 반도체 다이싱 테이프로의 적용 연구)

  • Hee-Woong Park;Nam-Gyu Jang;Kiok Kwon;Seunghan Shin
    • Applied Chemistry for Engineering
    • /
    • v.34 no.5
    • /
    • pp.522-528
    • /
    • 2023
  • In this work, adhesive tapes were prepared for the dicing process in semiconductor manufacturing. Compounds with different numbers of photoreactive groups (f = 1 to 3) were synthesized and incorporated into acrylic copolymers to formulate UV-curable acrylic adhesives. Structural confirmation of the synthesized photoreactive compounds (f = 2 or 3) was performed using nuclear magnetic resonance (NMR) spectroscopy. The introduction of the photoreactive compounds into the acrylic adhesive was accomplished by urethane reactions, and the successful synthesis of the UV-curable acrylic adhesive was verified by Fourier transform infrared (FT-IR) measurements. To evaluate the performance of the adhesive, the peel strength was evaluated before and after UV irradiation using a silicon wafer as a substrate. The adhesive exhibited high peel strength (~2000 gf/25 mm) before UV exposure, which was significantly reduced (~5 gf/25 mm) after UV exposure. Interestingly, the adhesive containing multifunctional photoreactive compounds showed the most significant reduction in peel strength. In addition, surface residue measurements by field emission scanning electron microscopy (FE-SEM) showed minimal surface residue (~0.2%) after UV exposure. Overall, these results contribute to the understanding of the behavior of UV-curable acrylic adhesives and pave the way for potential applications in semiconductor manufacturing processes.

A Study on The Virtuous Cycle of The Value Chain and Value System in Korean Photovoltaic Industry (한국 태양광산업의 가치사슬과 가치시스템 선순환 구조 분석)

  • Park, Sung-Hwan;Park, Min-Hyug;Park, Jung-Gu
    • Journal of Energy Engineering
    • /
    • v.23 no.1
    • /
    • pp.21-32
    • /
    • 2014
  • This study has analyzed whether the virtuous cycle of value-added between the processes within the company has formed and whether the virtuous ecosystem between the processes within the industry has been built through the analysis of value chain(VC) and value system(VS) targeting the Korean photovoltaic companies. For a study method, after conducting a survey on the companies, a regression analysis was performed on the causal relationship between the process within the VC and VS. Based on the results of the analysis, for the VC of the Korean photovoltaic industry, an increase in the R&D support from the government has led to the increase in the investment of R&D for the related industry, and the increase in the investment of R&D has contributed to the increase in the growth of its productivity, and the growth in the productivity of R&D has influenced the increase in the production of solar products. In addition, the reduction of photovoltaic production cost for the company has influenced the increase of recurring profit margin compared to the sales. However it was shown that the increase in the company's production volume does not contribute to the reduction of production cost. Meanwhile, the increase in recurring profit margin compared to the sales were influencing the increase in the production volume but it was shown that the increase in the company's investment of R&D was not a contributing factor thus it was not included in the virtuous cycle. It was analyzed that the VS was shown not to influence all other processes within the industry except for the module companies where the increase in the recurring profit margin compared to the sales was influenced by the increase in the recurring profit margin compared to the sales of solar cell companies. This shows that the virtuous industrial ecosystem which should be made under the mutual cooperation by the ingot, wafer, solar cell, module and system companies are yet incomplete.

Crytallization Behavior of Amorphous ${Si_{1-x}}{Ge_x)$ Films Deposited on $SiO_2$ by Molecular Beam Epitaxy(MBE) ($SiO_2$위에 MBE(Moleculat Beam Epitaxy)로 증착한 비정질 ${Si_{1-x}}{Ge_x)$박막의 결정화거동)

  • Hwang, Jang-Won;Hwang, Jang-Won;Kim, Jin-Won;Kim, Gi-Beom;Lee, Seung-Chang;Kim, Chang-Su
    • Korean Journal of Materials Research
    • /
    • v.4 no.8
    • /
    • pp.895-905
    • /
    • 1994
  • The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

  • PDF

Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide (초임계 이산화탄소를 이용한 미세전자기계시스템의 식각, 세정, 건조 연속 공정)

  • Min, Seon Ki;Han, Gap Su;You, Seong-sik
    • Korean Chemical Engineering Research
    • /
    • v.53 no.5
    • /
    • pp.557-564
    • /
    • 2015
  • The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-$CO_2$ (supercritical-$CO_2$) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-$CO_2$. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-$CO_2$ without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, $25^{\circ}C$) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, $5^{\circ}C$, we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-$CO_2$ (7.5 Mpa, $40^{\circ}C$), we had as good results as those of the case using gas-$CO_2$. Besides the processing time was shortened compared with that of the case of using gas-$CO_2$.