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http://dx.doi.org/10.6111/JKCGCT.2022.32.1.001

Growth of ring-shaped SiC single crystal via physical vapor transport method  

Kim, Woo-Yeon (Department of Advanced Materials Engineering, Dong-Eui University)
Je, Tae-Wan (Department of Advanced Materials Engineering, Dong-Eui University)
Na, Jun-Hyuck (Department of Advanced Materials Engineering, Dong-Eui University)
Choi, Su-Min (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Ha-Lin (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Hui-Yeon (Department of Advanced Materials Engineering, Dong-Eui University)
Park, Mi-Seon (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Jung, Eun-Jin (KXT)
Kang, Jin-Ki (AXEL)
Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.32, no.1, 2022 , pp. 1-6 More about this Journal
Abstract
In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.
Keywords
Silicon carbide; Single crystal growth; Focus ring; PVT;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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