• Title/Summary/Keyword: w-factor ring

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A GORENSTEIN HOMOLOGICAL CHARACTERIZATION OF KRULL DOMAINS

  • Shiqi Xing;Xiaolei Zhang
    • Bulletin of the Korean Mathematical Society
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    • v.61 no.3
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    • pp.735-744
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    • 2024
  • In this note, we shed new light on Krull domains from the point view of Gorenstein homological algebra. By using the so-called w-operation, we show that an integral domain R is Krull if and only if for any nonzero proper w-ideal I, the Gorenstein global dimension of the w-factor ring (R/I)w is zero. Further, we obtain that an integral domain R is Dedekind if and only if for any nonzero proper ideal I, the Gorenstein global dimension of the factor ring R/I is zero.

RINGS WITH A RIGHT DUO FACTOR RING BY AN IDEAL CONTAINED IN THE CENTER

  • Cheon, Jeoung Soo;Kwak, Tai Keun;Lee, Yang;Piao, Zhelin;Yun, Sang Jo
    • Bulletin of the Korean Mathematical Society
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    • v.59 no.3
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    • pp.529-545
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    • 2022
  • This article concerns a ring property that arises from combining one-sided duo factor rings and centers. A ring R is called right CIFD if R/I is right duo by some proper ideal I of R such that I is contained in the center of R. We first see that this property is seated between right duo and right π-duo, and not left-right symmetric. We prove, for a right CIFD ring R, that W(R) coincides with the set of all nilpotent elements of R; that R/P is a right duo domain for every minimal prime ideal P of R; that R/W(R) is strongly right bounded; and that every prime ideal of R is maximal if and only if R/W(R) is strongly regular, where W(R) is the Wedderburn radical of R. It is also proved that a ring R is commutative if and only if D3(R) is right CIFD, where D3(R) is the ring of 3 by 3 upper triangular matrices over R whose diagonals are equal. Furthermore, we show that the right CIFD property does not pass to polynomial rings, and that the polynomial ring over a ring R is right CIFD if and only if R/I is commutative by a proper ideal I of R contained in the center of R.

ON RIGHT REGULARITY OF COMMUTATORS

  • Jung, Da Woon;Lee, Chang Ik;Lee, Yang;Park, Sangwon;Ryu, Sung Ju;Sung, Hyo Jin
    • Bulletin of the Korean Mathematical Society
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    • v.59 no.4
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    • pp.853-868
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    • 2022
  • We study the structure of right regular commutators, and call a ring R strongly C-regular if ab - ba ∈ (ab - ba)2R for any a, b ∈ R. We first prove that a noncommutative strongly C-regular domain is a division algebra generated by all commutators; and that a ring (possibly without identity) is strongly C-regular if and only if it is Abelian C-regular (from which we infer that strong C-regularity is left-right symmetric). It is proved that for a strongly C-regular ring R, (i) if R/W(R) is commutative, then R is commutative; and (ii) every prime factor ring of R is either a commutative domain or a noncommutative division ring, where W(R) is the Wedderburn radical of R.

A 2.4 GHz Low-Noise Coupled Ring Oscillator with Quadrature Output for Sensor Networks (센서 네트워크를 위한 2.4 GHz 저잡음 커플드 링 발진기)

  • Shim, Jae Hoon
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.121-126
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    • 2019
  • The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

A New Trench Termination for Power Semiconductor Devices (전력소자를 위한 새로운 홈구조 터미네이션)

  • Min, W.G.;Park, N.C.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1337-1339
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    • 1998
  • The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

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Photonic K-Band Microwave Bandpass Filter with Electrically Controllable Transfer Characteristics Based on a Polymeric Ring Resonator (전기적으로 가변되는 전달특성을 갖는 폴리머 링 광공진기를 이용한 마이크로웨이브 대역통과 필터)

  • Kim, Gun-Duk;Lee, Sang-Shin
    • Korean Journal of Optics and Photonics
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    • v.17 no.5
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    • pp.475-479
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    • 2006
  • An integrated photonic K-band microwave bandpass filter has been proposed and demonstrated by incorporating a polymeric ring resonator. Its transfer characteristics were adjusted by shilling the resonance wavelength of the ring resonator via the thermooptic effect. The achieved performance of the filter includes the center frequency of 20 GHz, the attenuation of ${\sim}15dB$, the bandwidth of 2 GHz, and the corresponding quality factor of 10. The microwave output power within the passband of the device was adjusted at the rate of about 6.7 dB/mW in the range of 27 dB. This kind of device with electrically controllable transfer characteristics can be applied to implement microwave switches and other devices.

Friction Characteristics of Warm a Forging Lubricant Containing Nano Graphite Powder (나노분말이 함유된 온간단조용 윤활제 마찰특성)

  • Kim, D.W.;Kim, Y.R.;Lee, G.A.;Choi, H.J.;Yun, D.J.;Shin, Y.C.;Lee, J.K.;Lim, S.J.
    • Transactions of Materials Processing
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    • v.21 no.1
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    • pp.13-18
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    • 2012
  • During warm forging, materials are formed in the temperature range of $300^{\circ}C\sim900^{\circ}C$. In this temperature range, the friction between the forging die and the material is very high and has a negative effect on the forming process causing severe die wear and possible defects in the component because of stick-slip. Thus, lubrication characteristics are a very important factor for productivity during warm forging. In this paper, ring compression experiments were conducted to estimate the friction factor between the die and the materials as the main factor in characterizing the lubricant. Also, ring tests using normal graphite power as a lubricant coating system were compared with tests using nano graphite powder. The results confirm that the nano graphite is superior to the normal graphite in view of its lubricating effect. In addition, the friction factor (m) was estimated with respect to the amount of the nano graphite content in the lubricant. With 10 % nano graphite the friction factor had the lowest value as compared to other amounts. It can be concluded that the amount of the nano graphite in the coating system can be optimized to obtain the best lubrication condition between the die and the material using ring test experiments.

Microstructure Change of Large Cast-forged Product by Forging and Heat Treatment Conditions (단조/열처리 공정이 대형 주단조품의 조직변화에 미치는 영향)

  • Lee, M.W.;Lee, Y.S.;Lee, S.W.;Lee, D.H.;Kim, S.S.;Moon, Y.H.
    • Transactions of Materials Processing
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    • v.18 no.6
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    • pp.458-464
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    • 2009
  • Thermal energy control is a important factor to control properties of large sized product in ingot-forging. Good control of thermal energy helps to increase characteristics and eliminate defects of large cast-forged part, such as large sized forged shell. We have studied about not only large size ring forging process and after heat treatment process by FEM simulation. Changes of temperature and microstructure for forged shell were predicted according to different heat treatment conditions. Therefore, we can choose the proper heat treatment condition by FEA. The sectional properties confirmed by practical experiment and evaluation have presented possibilities of process design by computational analysis.

Microstructure change of large cast-forged product by heat treatment conditions (열처리 공정이 대형 주단조품의 조직변화에 미치는 영향)

  • Lee, M.W.;Lee, Y.S.;Lee, S.W.;Lee, D.H.;Kim, S.S.;Moon, Y.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2009.05a
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    • pp.102-106
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    • 2009
  • Thermal energy control is a important factor in a large size casting and forging. Good control of thermal energy makes characteristics and defect of large cast-forged part, such as large sized forged shell. We have studied about not only large size ring forging process and after heat treatment by FEM simulation. Also, changes of temperature and microstructure for forged shell were predicted. Therefore, we can choose the proper heat treatment condition by FEA. The sectional properties confirmed by practical experiment and evaluation have presented possibilities of process design by computational analysis.

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