• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 1997년도 추계학술대회 발표논문집:21세기를 향한 정보통신 기술의 전망
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1752-1758
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• 2018

In a low-voltage distribution system, the molded case circuit breaker (MCCB) is a widely used device to protect loads by interrupting over-current; however the hot gas generated from the arc discharge in the interrupting process depletes the dielectric recovery strength between electrodes and leads to re-ignition after current-zero. Even though the circuit breaker is ordinarily tripped and successfully interrupts the over-current, the re-ignition causes the over-current to flow to the load again, which carries over the failure interruption. Therefore, it is necessary to understand the dielectric recovery process and the dielectric recovery voltage of the MCCB. To determine these characteristics, a measuring system comprised of the experimental circuit and source is implemented to apply controllable recovery voltage and over-current. By changing the controllable recovery voltage, in this work, re-ignition is driven repeatedly to obtain the dielectric recovery voltage V-t curve, which is used to analyze the dielectric recovery strength of the MCCB. A measuring system and an evaluation technique for the dielectric recovery strength of the MCCB are described. By using this system and method, the measurement to find out the dielectric recovery characteristics after current-zero for ready-made products is done and it is confirmed that which internal structure of the MCCB affects the dielectric recovery characteristics.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• 전기전자학회논문지
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• 제23권1호
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• pp.230-234
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• 2019

본 논문은 펄스파워 동작시의 수백 ns의 대전류를 측정하기 위한 전류 센서의 개발과 특성평가 결과에 대하여 논하였다. 개발된 전류 센서는 펄스 파워 동작시 전류에 의해 발생되는 자속으로부터 유기기전력을 측정하도록 특별히 설계하였다. 개발 된 전류 센서의 출력 특성은 상업용 센서의 출력 특성과 매우 일치하였으며, 개발 된 센서의 출력 전압 검량선을 이용하여 빠른 펄스 파워의 실제 전류를 쉽게 검출 할 수 있음을 보였다. 따라서, 본 연구에서 개발 된 전류 센서는 실제적인 펄스파워 시스템에 적용할 수 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• 한국정보통신학회논문지
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• 제13권6호
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• pp.1045-1050
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• 2009

본 연구에서는 MicroTec을 이용하여 태양전지의 전류-전압 특성곡선을 분석하였다. 전류-전압 특성곡선은 태양전지의 효율을 나타낸다. 전극이 직접 접촉하는 부분에 고농도 도핑을 하고 전극이 없는 부분에 저농도 도핑으로 전면을 처리한다. 도핑 농도를 $10^{14}cm^{-3}$에서 $10^{17}cm^{-3}$까지 변화시켜 도핑 농도에 따른 전류전압특성을 조사하였다. 또한 태양전지의 최대효율을 얻을 수 있는 도핑 농도를 결정하여 이의 전류-전압특성곡선을 비교 분석 하고자한다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.401-406
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• 2005

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.47-50
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• 2003

In order to verify the extended theory, we have fabricated a two layers cable with the same twisting layer pitch. It was observed that almost all the operational current less than the critical current flowed on the outer layer because of its lower inductance. In case of operational current more than critical currents of layers, the flux flow resistances affect strongly current waveform and thereby the currents of layers were determined by the flux flow resistances. And we investigated withstand voltage, impulse voltage and breakdown characteristics of mini-model cable. In these test, the withstand voltage and impulse voltage test was satisfied and the breakdown voltage was 110kV.

• 전기학회논문지
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• 제66권2호
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• 한국재료학회지
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• 제24권7호
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.