• 제목/요약/키워드: voltage-controlled oscillator(VCO)

검색결과 265건 처리시간 0.024초

10 Gbps SDH 광전송시스템을 위한 클럭보상/데이타 재생회로용 전압제어 hair-pin 공진 발진기의 설계 (A design of voltage controlled hair-pin resonator oscillator for the use of clock precovery/data regeneration circuit in 10 Gbps SDH fiber optic systems)

  • 연영호;이수열;이주열;유태완;박문수;홍의석
    • 한국통신학회논문지
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    • 제21권5호
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    • pp.1304-1316
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    • 1996
  • In this paper, A VCO(Voltage Controlled Oscillator) in use of clock recovery/data regeneration circuit for 10 Gbps fiber optic receivers was developed. The improved hair-pin resonator with a parallel coupled lines, which has been applied to microstrip filters, was used as a resonance part. As a frequcncy tuning device by substituting 3-terminalMESFET vaaractor for varactor diode, an MMIC manufacturing process will be simplified. Since a hair-pin resonator is planar type compared to the dielectric resonator and has a relatively flat reactance verus frequency, it will be favorable to apply a hair-pin resonator to an MMIC, in addition wideband frequency tuning range is able to be obtained.

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0.18μm NMOS 캐스코드 전류원 구조의 2.4GHz 콜피츠 전압제어발진기 설계 및 제작 (A Design and Fabrication of a 0.18μm CMOS Colpitts Type Voltage Controlled Oscillator with a Cascode Current Source)

  • 김종범;유정호;최혁산;황인갑
    • 전기학회논문지
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    • 제59권12호
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    • pp.2273-2277
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    • 2010
  • In this paper a 2.4GHz CMOS colpitts type microwave oscillator was designed and fabricated using H-spice and Cadence Spetre. There are 140MHz difference between the oscillation frequency and the resonance frequency of a tank circuit of the designed oscillator. The difference is seemed to be due to the parasitic component of the transistor. The inductors used in this design are the spiral inductors proposed in other papers. Cascode current source was used as a bias circuit of a oscillator and the output transistor of the current source is used as the oscillation transistor. A common drain buffer amplifier was used at the output of the oscillator. The measured oscillation frequency and output power of the oscillator are 2.173GHz and -5.53dBm.

Phase and Amplitude Drift Research of Millimeter Wave Band Local Oscillator System

  • Lee, Chang-Hoon;Je, Do-Heung;Kim, Kwang-Dong;Sohn, Bong-Won
    • Journal of Astronomy and Space Sciences
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    • 제27권2호
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    • pp.145-152
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    • 2010
  • In this paper, we developed a local oscillator (LO) system of millimeter wave band receiver for radio astronomy observation. We measured the phase and amplitude drift stability of this LO system. The voltage control oscillator (VCO) of this LO system use the 3 mm band Gunn oscillator. We developed the digital phase locked loop (DPLL) module for the LO PLL function that can be computer-controlled. To verify the performance, we measured the output frequency/power and the phase/amplitude drift stability of the developed module and the commercial PLL module, respectively. We show the good performance of the LO system based on the developed PLL module from the measured data analysis. The test results and discussion will be useful tutorial reference to design the LO system for very long baseline interferometry (VLBI) receiver and single dish radio astronomy receiver at the 3 mm frequency band.

바렉터 다이오드를 이용하지 않은 광대역 Push-Push 전압제어 발진기 (A Novel Varactor Diodeless Push-Push Voltage Controlled Oscilltor with Wide-Tuning Range)

  • 이문규;문성모;민상보
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.100-103
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    • 2003
  • A Ku-band Push-push VCO for low cost applications is proposed. The proposed push-push oscillator achieves a wide tuning range in Ku-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning range of 900MHz, fundamental suppression of -30dBc and good phase noise of -115dBc@1MHz offset.

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The Impact of Gate Leakage Current on PLL in 65 nm Technology: Analysis and Optimization

  • Li, Jing;Ning, Ning;Du, Ling;Yu, Qi;Liu, Yang
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권1호
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    • pp.99-106
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    • 2012
  • For CMOS technology of 65 nm and beyond, the gate leakage current can not be negligible anymore. In this paper, the impact of the gate leakage current in ring voltage-controlled oscillator (VCO) on phase-locked loop (PLL) is analyzed and modeled. A voltage -to-voltage (V-to-V) circuit is proposed to reduce the voltage ripple on $V_{ctrl}$ induced by the gate leakage current. The side effects induced by the V-to-V circuit are described and optimized either. The PLL design is based on a standard 65 nm CMOS technology with a 1.8 V power supply. Simulation results show that 97 % ripple voltage is smoothed at 216 MHz output frequency. The RMS and peak-to-peak jitter are 3 ps and 14.8 ps, respectively.

향상된 나선형 인덕터를 이용한 블루투스 부성저항발진기 설계 (Design of The Bluetooth Negative Resistor Oscillator using the Improved Spiral Inductor)

  • 손주호;최석우;김동용
    • 한국멀티미디어학회논문지
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    • 제6권2호
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    • pp.325-331
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    • 2003
  • 본 논문에서는 0.25$\mu\textrm{m}$ 1-poly 5-metal CMOS n-well 공정 을 이 용하여 나선형 인덕터와 블루투스 수신기에 응용할 수 있는 전압제어 발진기를 제안하였다. 제안된 인덕터는다층 메탈을 이용하여 인덕터의 저항 성분을 감소시켜 블루투스 주파수 대역에서 Q값을 향상시켰다 또한 Q값이 향상된 나선형 인덕터를 이용하여 부성저항 전압제어 발진기를 설계하였다. 설계된 부성저항 발진기의 시뮬레이션 결과는 외부의 커패시턴스가 2pF에서 14pF:까지 변화할 때 발진 주파수대역은 2.33GHz에서 2.58GHz이고, 발진 출력은 0dBm 이상이었다.

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세라믹 적층 기술을 이용한 초소형 VCO (A Miniaturized VCO Using Multi-layer Ceramic Technology)

  • 고윤수;홍성용;배홍열;김기수;송호원
    • 한국전자파학회논문지
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    • 제10권1호
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    • pp.70-77
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    • 1999
  • 세라믹 적층기술을 이용하여 PCS 주파수 대역의 초소형 vco를 설계하고 제작하였다. 위상잡음 특성을 개선하고 크기를 줄이기 위하여 품칠계수(quality factor)가 우수한 세라믹 다층기판으로 스트립라인을 구현 하여 vco 공진부의 인덕터로 사용하였다 1.720 -1.780 MHz에서 동작하도록 제작된 vco는 $6mm\times6mm\times2mm$의 크기로 초소형이며, 3.3 V, 9 mA의 바이어스 조건에서 - 3.7 dBm의 출력을 얻었고, 위상잡음 특성 은 10 KHz offset에서 95 dBe/Hz였다 본 논문에서 제작된 세라믹 VCo는 기존의 에폭시 수지(FR4) 기판을 사용한 VCo보다 약 5 dBe/Hz 개선된 위상잡음(C/N) 특성을 얻었다.

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자동진폭조절 기능을 갖는 CMOS IF VCO 설계 (Design of a CMOS W VCO with Automatic Amplitude Control)

  • 김유환;문요섭;이종렬;박종태;유종근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.145-148
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    • 2002
  • In this paper, a voltage controlled oscillator (VCO) with automatic amplitude control is designed using a 0.35${\mu}{\textrm}{m}$ CMOS process. A cross-coupled PMOS pair is used for a negative resistance to compensate for the losses in the LC resonator, and an automatic\ulcorner amplitude control function is adapted to provide constant output power independent of the Q-factor of the LC resonator. The designed VCO operates in the 200MHz to 550MHz frequency range using different external resonators. The simulated phase noise is -128 dBc/Hz at 100KHz offset from the carrier frequency of 260MHz. It dissipates 0.㎽ from a 3V power supply. The area is 300${\mu}{\textrm}{m}$ x1201${\mu}{\textrm}{m}$.

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공정과 온도 보상된 400 MHz 주파수합성기 (A process and temperature compensated 400 MHz Frequency Synthesizer)

  • 이성권;이순섭;김수원
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.193-196
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    • 2001
  • One of the major reasons for not integrating a VCO on one-chip in a PLL (phase locked loop) system is the large chip-to-chip variation of the VCO (voltage controlled oscillator) center frequency. In this thesis, a simple bias technique is proposed to compensate the process fluctuation. The proposed bias technique is applied to the VCO and it reduces the deviation of the VCO center frequency from 35% to 8 %. With the suggested bias technique, a 400 MHz frequency synthesizer is designed for general purpose. It utilizes a programmable divider for various division ratio. The design methodology provides the possibility of the one-chip solution for a PLL system.

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A 10-GHz CMOS LC VCO with Wide Tuning Range Using Capacitive Degeneration

  • Yu, Tae-Geun;Cho, Seong-Ik;Jeong, Hang-Geun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권4호
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    • pp.281-285
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    • 2006
  • In order to widen the tuning range, capacitive degeneration is applied to fully CMOS LC VCOs. Small signal analysis shows that the fixed MOSFET capacitance seen by the LC tank is smaller than that of the traditional LC VCO, resulting in significant extension in the tuning range. This improvement in the tuning range has been verified through measurement of a 10-GHz LC VCO fabricated by $0.18{\mu}m$ CMOS process. The measured tuning range is from 9.8-GHz to 12-GHz, which is better than those of the reported CMOS LC VCOs in 10-GHz band. The measured phase noise is - 103dBc/Hz at 1MHz offset.