• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.524-525
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• 2008

본 논문에서는 각각의 스위치 시비율(Duty ratio)의 변화를 이용한 기존의 풀-브릿지 방식과 두 쌍의 스위치 신호 위상 변화를 이용한 위상천이 풀-브리지(Phase-shift Full-bridge) 방식의 차이점을 서술하였다. 위상천이 컨버터의 안정성을 연구하기 위하여, 출력 전류의 맥동(ripple)을 작게 하는 배전류(Current Doubler) 정류회로와 효율을 높이기 위한 동기 정류기(Synchronous Rectifier)를 포함한 평균화 된 스위치 모델을 제안한다. 이 모델을 이용하여 PSPICE 시뮬레이션을 통해 안정성을 고찰하였으며 1.2kW급 170-14V DC-DC 컨버터의 시작품을 제작 후 시뮬레이션 결과와 시작품 결과를 비교하였다. 시뮬레이션의 경우 위상여유는 $58^{\circ}$ 시작품의 위상여유는 $68^{\circ}$로 나타났으며 교차주파수는 12kHz로 동일하게 나오는 것을 확인하였다. 따라서 제안한 시뮬레이션 모델을 이용하여 실제 회로의 안정성을 예측할 수 있으며 이를 실제 회로 제작에 활용 할 수 있다.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.184-191
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• 2013

In this paper, bidirectional AC-DC converter using dual half-bridge converter is proposed. A transformer leakage inductance in the dual half-bridge converter is used for making resonance with the capacitor of the voltage-doubler, which can help the switched current to be sinusoidal without extra inductive component and also the switching loss can be reduced through operation such as ZVS, ZCS. Both circuit analysis and design guideline are described, and also the feasibility for the proposed converter is shown through the hardware implementation and the experimental results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.148-153
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• 2011

In this paper, an inverse class E frequency multiplier has been designed to generate 5.8 GHz wireless LAN signal by multiplying 2.9 GHz input. The inverse class E frequency multiplier is operating with low inductance value and low peak drain voltage than the class E frequency multiplier. Measurement shows the output power of 21 dBm, the mutiplier gain of 6 dB, and the PAE(Power Added Efficiency) of 35 % with 15 dBm input power.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.1
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• pp.48-55
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• 2014

These Xenon flashlamp power supply for Ultra Violet has converter with high voltage conversion ratio. General model is composed of transformer with high voltage conversion ratio and voltage doubler rectifier circuit. Purpose of power supply leads dielectric breakdown of Xenon flashlamp and passes current rapidly. When passing current, it has to limit current to avoid over-heat, damage of electrode and acceleration of gas oxidation which are cause of performance degradation of lamps. Generally, inductors and resistors, which are called as "Ballast," are used to limit currents. Generally, Transformer has high turn ratio to make high voltages. But we can get high voltages using the transformer with low turn ratio which is driven with self resonance. Also, an advantage of self resonance is to make a circuit simply through impedance of transformer in resonance frequency which filters output voltage. As using an unique impedance of transformer, the circuit does not need other impedance elements like the ballast. So the power supply assures high efficiency of the arc discharge.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.4 s.346
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• pp.67-74
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• 2006

We present the design of a radiometer in W-band which operates simultaneously with a single antenna configured FMCW radar. We choose a total power radiometer(TPR) which shares an antenna and a front-end with the radar for miniaturizing the system. We separate the radiometer signal from the radar signal using a diplexer in IF band. Because the radiometer has an unwanted transmitter section due to the common use of the MMW front-end with the radar, some additional noise signals caused by the transmitter degrade the sensitivity of the radiometer system. To compensate the degradation of sensitivity, we use matching circuits and a diode detector configured as the voltage doubler. Through some experiments, we have verified that the designed radiometer system has good performances in detecting metal targets tying at several hundred meters.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.137-145
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• 2008

In this paper, novel CMOS charge pump having NMOS and PMOS transfer switches and a bulk-pumping circuit has been proposed. The NMOS and PMOS transfer switches allow the charge pump to improve the current-driving capability at the output. The bulk-pumping circuit effectively solves the bulk forward problem of the charge pump. To verify the effectiveness, the proposed charge pump was designed using a 80-nm CMOS process. The comparison results indicate that the proposed charge pump enhances the current-driving capability by more than 47% with pumping speed improved by 9%, as compared to conventional charge pumps having either NMOS or PMOS transfer switch. They also indicate that the charge pump reduces the worst-case forward bias of p-type bulk by more than 24%, effectively solving the forward current problem.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.862-867
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• 2009

This paper presents a study on a rectenna for rectification of incident low power microwave signals with power densities less than 2 mW/$cm^2$ at 2.45 GHz. The proposed rectenna is designed and implemented by a rectifier with voltage doubler structure and a printed Yagi antenna which suppress re-radiation of the second order harmonic of fundamental frequency. The printed Yagi antenna has a gain of about 5 dB, and the measured conversion efficiencies of the rectenna are from 32 % to 42 % when its incident power levels are from 0 dBm to 14 dBm. The developed rectenna is expected to be useful in the power transmission system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.50-57
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• 2008

In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.