• Proceedings of the KIEE Conference
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• 2007.04c
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• pp.97-99
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• 2007

This paper presents a fuzzy logical control method to implement an on-line optimum efficiency control for Permanent Magnet Synchronous Motor. This method real-timely adjusts the output voltage of the inverter system to achieve the optimum running efficiency of the whole system. At first, the input power is calculated during the steady state in the process of efficiency optimizing. To exactly estimate the steady state of the system, this section needs check up the speed setting on timely. The second section is to calculate input power of dc-bus. The exact measurement of the voltage and current is the vital point to acquire the input power. The third section is the fuzzy logic control unit, which is the key of the whole drive system. Based on the change of input power of dc-bus and output voltage, the variable of output voltage is gained by the fuzzy logical unit. With the on-line optimizing. the whole system call fulfill the minimum input power of dc-bus on the running state. The experimental result proves that the system applied the adjustable V/f control method and the efficiency-optimizing unit possesses optimum efficiency, and it is a better choice for simple variable speed applications such as fans and pump.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1391-1395
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• 2011

In this paper, would implement a transceiver for the visible light communication that based on wireless communication driving technology for LED illumination-based infrared ray communication, and measurement analyzed a design error rate of a transceiver variable rate has made about distance change -2.5m. The error rate measured a voltage variable along illuminate change between switchable circumstances, which has illuminated insight and outright. Each analyzed and measurement on the communication distance errors along the differences of disturbance light between night and days. The LED module has implemented for number of 6 through illumination dimming in case of different values. Also, implementation for the system module of a VLC transceiver based on the infrared sensors which used feedback outcome value has analyzed with error rate.

• Journal of Institute of Control, Robotics and Systems
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• v.3 no.5
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• pp.455-460
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• 1997

This paper presents a recoil and counter recoil motion measurement method using linear variable differential transformers(LVDT). The output of a LVDT is obtained from the differential voltage of the 2nd transformers. As the sensor core is attached to the motion body, the output is directly proportional to the core motion. Displacement, velocity and acceleration are measured from the core length. A comparison between the measurement result and the known value, which is obtained by the precision steel tape, shows that the accuracy and the usefulness of the proposed scheme is validated.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.1-7
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• 2004

In this paper, we have developed the DC parameters test system which inspects the properties of DC parameters for semiconductor products. The developed system is interfaced by IBM-PC. It is consisted of CPLD part, ADC(Analog-to-Digital Converter), DAC(Digital-to-Analog Converter), voltage/current source, variable resistor and measurement part. In the proposed system, we have designed the constant voltage source and the constant current source in a part. In the comparison of results, the results of the simulation are very similar to the ones of the implementation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.1
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• pp.157-165
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• 2001

We analyzed the electrical characteristics of platinum silicide schottky junction to develope the voltage swing in Integrated Schottky Logic gates, and simulated the characteristics with the programs in this junctions. Simulation programs for analytic characteristics are the Medichi tool for device structure, Matlab for modeling and SUPREM V for fabrication process. The silicide junctions consist of PtSi and variable silicon substrate concentrations in ISL gates. Input parameters for simulation characteristics were the same conditions as process steps of the device farications process. The analitic electrical characteristics were the turn-on voltage, saturation current, ideality factor in forward bias, and has shown the results of breakdown voltage between actual characteristics and simulation characteristics in reverse bias. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height were decreased but saturation current and ideality factor were increased by substrates increased concentration variations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.1-6
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• 2006

This paper proposes substrate-bias voltage generator to reduce leakage power consumption of digital logic circuits operating at supply voltage of 0.5V. Proposed substrate-bias voltage generator is composed of VSS and VBB generator. The former circuit produces negative voltage and supplies its output voltage for VBB generator. As a result VBB generator develops much lower negative voltage than that of conventional one. Proposed circuit is fabricated using 0.18um 1Poly-6Metal CMOS process and measurement result demonstrated stable operation with substrate-bias voltage of -0.95V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.147-151
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• 2011

We were analyzed the piezoelectric characteristic for electronics printing to inkjet printing system. These applications were possible use to Actuator, MEMS, FPCB, RFID, Solar cell and LCD color filter etc. Piezoelectric print head is firing from ink droplet control consideration ink viscosity properties. At this time, micro pattern for PCB metal printing was possible by droplet control of piezoelectric driving. These driving characteristics are variable voltage pulse waveform. We are used the piezoelectric analysis software of Finite Element Method (FEM), Piezoelectric design parameters are acquired from piezoelectric analysis, and measurement of piezoelectric. It designed for piezoelectric head to possible electric print pattern of inkjet printing system. For this validity we were established through in comparison with simulation and measurement. Designed piezoelectric specification obtained voltage 98V, firing frequency 10 kHz, resolution 360dpi, drop volume 20pl, nozzle number 256, and nozzle pitch 0.33 mm.

• Journal of the Korea Society of Computer and Information
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• v.9 no.4 s.32
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• pp.185-189
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• 2004

In this paper, designed a diode detector and a log chip detector for mobile communication, and its application is proposed by compared results. In practice, fabricated a diode detector have showed detection voltage of $0{\sim}0.7V$ to RF input power of $-40dBm{\sim}-10dBm$, therefore it has suitable characteristic for small variable signal detection. And a log chip detector have showed wide dynamic range of 65dB, and $1.5{\sim}4.5V$ detection voltage to RF input power of $-65dBm{\sim}0dBm$. therefore we have found that it suit peak power measurement because it had insensible output detection voltage.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.3
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• pp.83-90
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• 2009

This paper presents the design and measurement of a flight model for a Ku-Band Linearized Channel Amplifier. All MMICs, Variable Gain Amplifier (VGA), Variable Voltage Attenuator ('.IVA), Branch line Coupler and Detector for Pre-distorter are fabricated using a Thin-Film Hybrid process. The performance of the fabricated module is verified through the radio frequency circuit simulation tool and electrical function test in space environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.445-448
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• 1999

In this Paper, we present simple physical model of the Capacitance characteristics for GaAs MESFET\`s in wide temperatures. In this model, gate-source and gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltage. This model contained the temperature dependent variable that is the built-in voltage and the depletion width. Using the equations obtained in this work a submicron gate length MESFET has simulated and theoretical result are in good agreement with the experimental measurement.