• Title/Summary/Keyword: vapor-liquid-solid

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Growth and Characterization of P-type Doping for InAs Nanowires during Vapor-liquid-solid and Vapor-solid Growth Mechanism by MOCVD

  • Hwang, Jeongwoo;Kim, Myung Sang;Lee, Sang Jun;Shin, Jae Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.328.2-328.2
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    • 2014
  • Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

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Fabrication of TiO2 Nanowires Using Vapor-Liquid-Solid Process for the Osseointegration (골융합을 위한 Vapor-Liquid-Solid 법을 이용한 TiO2 나노와이어의 합성)

  • Yun, Young-Sik;Kang, Eun-Hye;Yun, In-Sik;Kim, Yong-Oock;Yeo, Jong-Souk
    • Journal of the Korean Vacuum Society
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    • v.22 no.4
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    • pp.204-210
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    • 2013
  • In order to improve osseointegration for biomedical implants, it is crucial to understand the interactions between nanostructured surfaces and cells. In this study, $TiO_2$ nanowires were prepared via Vapor-Liquid-Solid (VLS) process with Sn as a metal catalyst in the tube furnace. Nanowires were grown with $N_2$ heat treatment with their size controlled by the agglomeration of Sn layers in various thicknesses. MC3T3-E1 (pre-osteoblast) were cultured on the $TiO_2$ nanowires for a week. Preliminary results of the cell culture showed that the cells adhere well on the $TiO_2$ nanowires.

Single Crystalline InxGa1-xAs Nanowires on Si (111) via VLS Method (VLS 방법을 이용한 단결정 InxGa1-xAs 나노와이어 성장과 조성비 변화에 대한 특성측정)

  • Shin, Hyun Wook;Shin, Jae Cheol;Choe, Jeong-Woo
    • Journal of the Korean Vacuum Society
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    • v.22 no.2
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    • pp.105-110
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    • 2013
  • Single crystalline $In_xGa_{1-x}As$ nanowires are grown on Si (111) substrate via Vapor-Liquid-Solid growth mode using metal-organic chemical vapor deposition. The ternary nanowires have been grown with various growth conditions and examined by electron microscopy. The alloy compositions of the nanowires has been investigated using Energy-dispersive X-ray spectroscopy. We have found that the composition gradient of the nanowire becomes larger with growth temperature and V/III ratio.

Disengagement of a Pendant Liquid Drop from a Vibrating Ceiling (진동하는 고체면에 매달린 액적의 분리 현상)

  • 김호영;강승민;강병하
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.13 no.4
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    • pp.295-303
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    • 2001
  • Condensation of vapor on solid inherently accompanies generation of liquid drops on the solid surface. However, these drops prevent the solid surface from directly contacting the saturated vapor, thus causing thermal resistance. This work investigates a novel mechanism for enhancing the condensation process, in which the condensed drops are rapidly removed from a solid surface by imposing vibration on them. In the experiments, a water drop pendant from a solid surface is vibrated at a fixed frequency while increasing the vibration amplitude. Upon repeating the experiments using various frequencies, it is revealed that there exist resonant frequencies at which the minimum vibration amplitudes inducing a fall-off of the pendant drops are remarkably less than those at neighboring frequencies. These frequencies are supposed to correspond to the resonant frequencies for different modes of drop shape oscillations. They are compared with the resonant frequencies predicted by relatively simple analyses, and the factors causing discrepancy between then are discussed.

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NUMERICAL SIMULATION OF BOILING PHENOMENA USING A LEVEL-SET METHOD (Level-Set 방법을 이용한 비등현상 해석)

  • Son, G.
    • 한국전산유체공학회:학술대회논문집
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    • 2009.11a
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    • pp.218-222
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    • 2009
  • A level-set (LS) method is presented for computation of boiling phenomena which involve liquid-vapor interfaces that evolve, merge and break up in time, the flow and temperature fields influenced by the interfacial motion, and the microlayer that forms between the solid and the vapor phase near the wall. The LS formulation for tracking the phase interfaces is modified to include the effects of phase change on the liquid-vapor interface and contact angle on the liquid-vapor-solid interline. The LS method can calculate an interface curvature accurately by using a smooth distance function. Also, it is straightforward to implement for two-phase flows in complex geometries. The numerical method is applied for analysis of nucleate boiling on a horizontal surface and film boiling on a horizontal cylinder.

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Heat Transfer of an Evaporating Liquid on a Horizontal Plate

  • Joo, Sang-Woo;Park, Min-Soo;Kim, Min-Suk
    • Journal of Mechanical Science and Technology
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    • v.19 no.8
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    • pp.1649-1661
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    • 2005
  • We consider. a horizontal static liquid layer on a planar solid boundary. The layer is evaporating when the plate is heated. Vapor recoil and thermo-capillary are discussed along with the effect of mass loss and vapor convection due to evaporating liquid and non-equilibrium thermodynamic effects. These coupled systems of equations are reduced to a single evolution equation for the local thickness of the liquid layer by using a long-wave asymptotics. The partial differential equation is solved numerically.

Synthesis of Single-Crystalline InSb Nanowires Using CVD Method and Study of Growth Mechanism in Open and Close System (CVD 방법을 이용한 단결정 InSb 나노와이어의 성장과 Open/Close 시스템에서의 반응 메커니즘 연구)

  • Kang, Eun Ji;Park, Yi-Seul;Lee, Jin Seok
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.306-312
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    • 2013
  • Single-crystalline InSb nanowire was synthesized on $SiO_2$ wafer via vapor-liquid-solid (VLS) mechanism using chemical vapor deposition method. According to the source container system (open or close) which contain InSb powder and $SiO_2$ wafer, the single-crystalline InSb nanowires have different growth mechanisms. Structural characterization of the InSb nanowires was examined by scanning electron microscope (SEM). Composition of the nanowires was investigated using x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). This study demonstrates that length and diameter of the InSb nanowires are long and thick using open-boat system by VLS and additional vapor-solid (VS) mechanisms, because open-boat system can carry a large amount of vapor-phase InSb precursor than close-boat system.

Morphology Control of Single Crystalline Rutile TiO2 Nanowires

  • Park, Yi-Seul;Lee, Jin-Seok
    • Bulletin of the Korean Chemical Society
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    • v.32 no.10
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    • pp.3571-3574
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    • 2011
  • Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

Misunderstanding and Understanding of the Phase Diagram for Water: Water Evaporation and Ice Sublimation in the Atmosphere (물의 상평형 그림에 대한 오해와 이해: 대기 중 물의 증발과 얼음의 승화)

  • Park, Jong-Yoon
    • Journal of the Korean Chemical Society
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    • v.51 no.6
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    • pp.577-584
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    • 2007
  • The purpose of this study is to suggest how to use the phase diagram for water to explain the evaporation and sublimation in the atmospheric condition. In principle, the phase diagram for water represents a one component system so it cannot be applied to the water contact with the air. When the liquid or solid phase of water exists in the air, always water vapor also exists in the air. In this case, we cannot present this state as a single point on the phase diagram because the pressure of the liquid or solid is different from that of the vapor in the air. However, since the saturation vapor pressure of liquid or solid is altered by negligible amount due to the presence of air, the evaporation and sublimation in the atmospheric condition can be explained using the vapor pressure line and sublimation line on the phase diagram.

Growth Characteristics of Amorphous Silicon Oxide Nanowires Synthesized via Annealing of Ni/SiO2/Si Substrates

  • Cho, Kwon-Koo;Ha, Jong-Keun;Kim, Ki-Won;Ryu, Kwang-Sun;Kim, Hye-Sung
    • Bulletin of the Korean Chemical Society
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    • v.32 no.12
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    • pp.4371-4376
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    • 2011
  • In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.