• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.14 no.2
• /
• pp.59-67
• /
• 2000

In this paper, an ozonizer, which can supply individual and superposed silent discharge using three-phase voltage has been designed and manufactured. The ozonizer consists of 3 electrodes(Central Electrode, Internal Electrode and External Electrode and External electrode) and 2 gaps (gap between Central Electrode and Internal Electrode, gap between Internal Electrode and External Electrode). Ozone is generated according to voltage supplying method to each electrode by individual silent discharge and three-phase superposed discharge. The characteristics of ozone generation were investigated with variation of discharge power and the flow rate of supplied gas (O2). In case of individual silent discharge, the maximum values of ozone concentration, ozone generation and ozone yield were obtained between internal electrode and external electrode, and its values were 2300[ppm], 570[mg/h] and 745[g/kWh] respectively. Each maximum value was 5039[ppm], 1773[mg/h] and 851[g/kWh] respectively, when three-phase superposed silent discharge was employed. Therefore, characteristics of ozone generation with three-phase voltage are improved compared with single-phase voltage because silent discharge is generated continuously.

• The Journal of the Korea Contents Association
• /
• v.13 no.5
• /
• pp.146-158
• /
• 2013

The purpose of this study is to analyze the story-retelling structure of tablet PC-based applications that designed to help infants to create stories. Owing to the popularization and the usability of smart devices, infants have become from content consumers to creators who reconstruct stories in creative ways, based on the stories they heard. In those participatory process, infants experience enjoying stories independently and expanding the meaning of texts. Story-retelling is an adequate methodology that cultivates creativity, expressiveness, and literacy ability to infant. Consequently, this study investigates three types of story-retelling in , , and , and searches structure elements and methods of story-retelling in integrated approach. In conclusion, the story-retelling applications that provide 'creative gap' have educational value, because they allow infants to demonstrate imagination by filling in the gap and to realize the rule of stories.

• Journal of Powder Materials
• /
• v.24 no.3
• /
• pp.210-215
• /
• 2017

In this study, STS316L powders prepared by gas atomization are used to manufacture bulk structures with dimensions of $10{\times}10{\times}10mm^3$ using selective laser melting (SLM). The microstructures and hardness of the fabricated 316L stainless steel has been investigated with the laser beam overlap varied from 10% to 70%. The microstructures of the fabricated STS316L samples show a decrease in the balling and satellite of powders introducing defect in the bulk samples and the porosity caused by the gap between the molten metal pools disappearing as the overlap ratio increases, whereas a low overlap ratio results in significant balling and a large amount of isolated powders due to the increased gap between the melt pools. Furthermore, the highest value in Vickers hardness is obtained for the sample fabricated by 30% overlapped laser beams. These results show that the overlap ratio of laser beams in the SLM process should be considered as an important process parameter.

• Journal of Satellite, Information and Communications
• /
• v.11 no.3
• /
• pp.28-31
• /
• 2016

In this study, it was investigated about optical simulation in highg brightness and high uniformity direct-type backlight design for medical application. Direct-type backlight has been used high-brightness backlight such as Medical LCD application. The key parameter in designing direct-type backlight was consists of three geometrical dimension such as the distance of two lamps, the gap of lamp and reflection plate and the number of lamps. It has many of variations in optical design and it causes the different properties in backlight system. It shows the best values of above parameters; 26mm of the distance of two lamps, 4.5mm of the gap of lamp and reflection plate and 16 lamps. And we produced the specimen as above condition, and acquired good result in backlight such as the value of the brightness is 6423 nit in center of emission area and less than 5% in brightness uniformity. It shows the effective ways of designing backlight system using optical simulation method for medical LCD application.

• Journal of Information Display
• /
• v.9 no.4
• /
• pp.21-29
• /
• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

• Journal of the Semiconductor & Display Technology
• /
• v.5 no.2 s.15
• /
• pp.33-36
• /
• 2006

Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.743-747
• /
• 2003

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.7
• /
• pp.414-423
• /
• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Fashion & Textile Research Journal
• /
• v.16 no.5
• /
• pp.680-688
• /
• 2014

The aim of this research is to classify intrinsic attribution of 'la diff$\acute{e}$rance images' which are core propositions of changeability of fashion style. The specific questions of this research are; what are the definition of 'changeability of fashion', 'la diff$\acute{e}$rance' and 'supplement' and what are the relationships?, how the la diff$\acute{e}$rance images which are intrinsic of changeability of fashion style exist? and what is intrinsic attribution of 'ultimate la diff$\acute{e}$rant image', 'immediate la diff$\acute{e}$rant image' and 'la diff$\acute{e}$rant image of the trace'? The researchers deployed a qualitative research method providing a systematic review of the previous studies. In conclusion, the 'supplement' phenomenon and 'la diff$\acute{e}$rant images' shown in the changeability of fashion style, covers up the gap between the structural layers through the play led by supplement logic in the subconscious place of la diff$\acute{e}$rance of dialectical frame. They produce styles that have current value and become generalized la diff$\acute{e}$rant images of trace through the play of 'la dissemination.' These images repeat their individual play to reproduce a new different 'la diff$\acute{e}$rant images' and complete the aesthetics of harmony in the state of 'reservation,' 'deferment' and 'postponement'. The images are ready to make history and they create 'ultimate la diff$\acute{e}$rant images' from the demand of different period, and tries to combine with 'supplement' within 'the gap of la diff$\acute{e}$rance.' This process endlessly repeats in the dialectical frame through the la diff$\acute{e}$rant' play led by time and space, and it continuously produces new style that is required by different time and space.

• Journal of Navigation and Port Research
• /
• v.26 no.1
• /
• pp.120-126
• /
• 2002

ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition edges by a double beam spectro- photometer, and structural analysis by a x-ray diffraction rates were increased with incresing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46∼3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (III) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved.