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http://dx.doi.org/10.5394/KINPR.2002.26.1.120

Growth and Characterization of ZnS Thin Films by Hot Wall Method  

Lee, Sang-Tae (Korea Maritime University, College of Maritime Science, Division of Ship Operating Systems Engineering)
Publication Information
Journal of Navigation and Port Research / v.26, no.1, 2002 , pp. 120-126 More about this Journal
Abstract
ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition edges by a double beam spectro- photometer, and structural analysis by a x-ray diffraction rates were increased with incresing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46∼3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (III) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved.
Keywords
ZnS; Thin Film; Hot Wall Method; Band GAp Energy; Crystallinity; Cystal Structure;
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