• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.256-256
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process. Charge accumulation and resulting electric field generation mechanism by spray coating method were shown in Fig. 1. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the I-V curves didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Therefore we can control the performance of the devices fabricated from the CNT/PVDF composite film by adjusting the current level resulted from the CNT concentration with the uniform capacitance value.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Journal of Soil and Groundwater Environment
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• v.6 no.3
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• pp.3-12
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• 2001

This study conducted to Investigate the movement of fertilized nutrients in a volcanic ash soil in Jeju using by the pressure-vacuum soil water sampler. The percolated water to measure the ion concentration of leachates was taken from a lysimeter at depths of 20, 40, 60, 80, 100 and 120 cm in the soil in where a corn and potato were cultivated as a preceding and succeeding crop, respectively. Fertilizers of N-$P_2$O$_{5}$-$K_2$O were applied at the rate of 36-30-30 kg $10a^{-1}$ for the corn and 28-22-24 kg $10a^{-1}$ for the potato prior to planting of both crops. The highest concentrations of Cl , $NO_3$-N, $Ca^{+2}$ and $K^+$ in percolates were showed at 20cm and 40cm in soil depth at one month after fertilizing, and then gradually moved and reduced into below soil depths. At 5.5 months after fertilization, the concentrations in all soil depths were similar with the value of before fertilization. At depth of 120cm, the concentration of NO$_3$-N and the other cations in leachate was highest 1 to 1.5 months after fertilization. pH in percolated water was negatively correlated with NO$_3$-N concentration while the concentration of $NO_3$-N showed positive correlation between Cl, $Ca^{+2}$ and $Mg^{+2}$ concentrations. This result indicated that those cations can be leached out by accompanied with $NO_3$-N.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.483-488
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• 2010

ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.163-167
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• 2006

The transition of europium-doped gadolinium oxide phosphor to gadolinium borate phosphor with the concentration of boron in the spray pyrolysis was investigated. The particles prepared from spray solution below 10 wt% boric acid of prepared phosphor had crystal structure of $Gd_2O_3:Eu$ phosphor, in which the crystallinity of the particles decreased with increasing the boron concentration. A single phase $GdBO_3:Eu$ phosphor particles were prepared from spray solution above 50 wt% boric acid of prepared phosphor. The phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had no XRD peaks of $Gd_2O_3:Eu$ and $GdBO_3:Eu$ Therefore the phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had the lowest photoluminescence intensity under ultraviolet and vacuum ultraviolet. $GdBO_3:Eu$ and $Gd_2O_3:Eu$ phosphor particles prepared from spray solutions with proper concentrations of boric acid had good photoluminescence intensity under vacuum ultraviolet. The morphology of the phosphor particles were strongly affected by the concentrations of boric acid added into spray solution.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.271-275
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• 2011

The role and effect of Sb surfactant on structure and properties of p type gallium nitride (GaN) epilayers have been investigated. It was found that there was a increase of hole concentration with Sb surfactant, compared to typical Mg-doped p-GaN. The structural and optical quality of p-GaN epilayers were accessed by x-ray diffraction, photoluminescence and atomic force microscope measurements. The results clearly show that the increase in hole concentration with Sb surfactant can be resulted from decrease in the dislocations and nitrogen point defects.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.637-643
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• 2003

In order to improve the photoluminescent properties and crystallinity, Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) phosphors were synthesized by the sol-gel method. The willemite single phase was obtained at 110$0^{\circ}C$, which is lower temperature than that of the conventional solid-state reaction (130$0^{\circ}C$). The characteristics of fired samples were obtained by a 147 nm excitation source under VUV (Vacuum Ultraviolet). To investigation the effect of co-dopant, the content of Mn and the ratio of $H_2O$ to TEOS was fixed as 2 ㏖% and 36. 1, respectively. The highest emission intensity was obtained when the concentration of Cr and Ti was 0.1 ㏖% relative to Zn$_2$SiO$_4$:Mn. While the emission intensity decrease continuously the decay time improved as increased the Cr concentration. In the case of Ti added samples, however, the emission intensity increase up to 2 ㏖％ concentration.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.389-393
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• 2000

Effects of Co addition and heat treatment on the magnetic properties of Fe-Si-B thin films were investigated. The compositions of metalloids, i.e, B and Si, in the alloys were kept 10 at.% each. Heat treatments were carried out in the temperature range from 100 to $300^{\circ}C$ for up to 60 min. Amorphous thin films of FeCoSiB were deposited on the water-cooled substrates by dc magnetron sputtering. The composition of thin films was controlled by placing proper number of pellets of alloying elements and analyzed by ICP, resulting in $Fe_{80-X}Co_ XB_{10}Si_{10}$ (X=8~18 at.%). Saturation magnetization of the alloys increased as Co concentration increased up to 10 at.% and then decreased with further increase of Co concentration. However, coercive force of the films decreased with the increase of Co concentration. Furthermore, the coercive force was also reduced by the annealing due to the residual stress relief.