• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.126.1-126.1
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• 2011

박막형 태양전지의 효율 향상을 위하여 광확산 패턴이 형성된 기판을 제작하고 이를 이용하여 비정질 실리콘 박막 태양전지를 제작하였다. 나노 임프린트 방법을 사용하여 제작된 광확산 패턴은 불규칙한 마이크로-나노 크기의 미세구조를 가지고 있어 빛의 확산투과 비율을 향상시켜주는 역할을 하였다. 제작된 광확산 기판위에 TCO물질을 증착하고, PECVD법을 사용하여 비정질 실리콘 p-i-n 접합 구조를 형성하였다. 제작된 태양전지 소자를 1.5 AM의 조건에서 I-V 특성을 분석하였으며, 비교군으로 사용된 일본 Asahi 사의 U-type glass에 비해 높은 Jsc 값을 나타내었다. 또한 외부양자효율을 측정함으로써 광확산 패턴에 의한 양자효율 변화를 확인 할 수 있었다.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.101-105
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• 1999

We have performed an EMTDC simulation for the current limiting effects of a superconducting fault current limiter (SFCL). The fault currents in the 154 kV transmission line between the Gaepo and Sungnam substations increased up to 54kA and 60kA during the line-to-line and three phase faults, respectively. The SFCL with 100 $\Omega$ of impedance after quench limited the currents to less than 17 kA within a half cycle. This limited current is well below the upper limit of a circuit breaker, suggesting that the impedance of the SFCL in the transmission line is sufficient.

• Journal of Information Display
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• v.7 no.1
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• pp.35-40
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• 2006

Organic light-emitting diode (OLED) display panel using the charge-pump (CP) pixel addressing scheme was fabricated, and the results show that it is applicable for information display. A CP-OLED panel with 64 ${\times}$ 64 pixels consisting of thin-film capacitors and amorphous silicon Schottky diodes was fabricated using conventional thin-film processes. The pixel drive circuit passes electrical current into the OLED cell during most of the frame period as in the thin-film transistor (TFT)-based active-matrix (AM) OLED displays. In this study, the panel was operated at a voltage level of below 4 V, and this operation voltage can be reduced by eliminating the overlap capacitance between the column bus line and the common electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.189-192
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• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.554-557
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• 1999

This paper represent about design of the controller for battery of Guide-Eye Sign Lamp with traffic auxiliary system for power supply using solar cell. Simulation is represents V-I and power characteristic by Mathematical & Design Center 6.3 & Qnet 2.1. This system is successfully operating with high clearness lights.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1473-1475
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• 2006

The electro-optic properties of an active-matrix polymer network liquid crystal display (AM-PNLCD) with crossed polarizer films to improve its contrast ratio were evaluated. By using crossed polarizer films, it shows good contrast ratio as well as wide viewing angle and adequate response time at normal TFT-twisted nematic (TN) LCD driving voltage (2.8V).

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.121-121
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• 2010

As the industrial technology is getting higher, the pulsed power technology is required from various fields such as thermonuclear fusion energy sources, military applications, electric power distribution, and a variety of new specialized needs. This technology deals with the generation of very high power electromagnetic pulses through fast switching. We fabricated a pulsed power generator, named EMD pulse generator, by using Marx circuit with 200 kV high, 50 ns fast rise time. In this paper, we described about an effect of stray capacitance of coaxial Marx generator, EPG-AM200k, and a comparing the results of experiments and circuit analysis.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.413-414
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• 2008

A 2.4 GHz low phase noise fully integrated LC voltage-controlled oscillator (VCO) in $0.18\;{\mu}m$ CMOS technology is presented in this paper. The VCO is optimized based on phase noise reduction. The design of the VCO uses differential varactors which are adopted for symmetry of the circuit, and consider AM-PM conversion due to a cross-coupled pair. The VCO is designed to draw 3 mA from 1.8 V supply voltage. Simulated phase noise is -137.3 dBc/Hz at 3 MHz offset. The tuning range is found to be 300 MHz range from 2.3 GHz to 2.6 GHz.

• Journal of the Korean Chemical Society
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• v.6 no.2
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• pp.108-112
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• 1962

Lead ion gives a well-defined wave with $E_{1/2}$=-0.57V(vs. S.C.E.) from a base electrolyte consisting of 0.1M TEA=0.5M$KNO_3$=0.0002% methl red. (pH 9.8).The reduction wave of lead is lead(II) to lead(0) and electrode reaction of this wave diffusion controlled.Its diffusion current constant is 2.45 and temperature coefficient of this wave is about 1.2%.Under above conditions, diffusion current is proportional to the concentration of lead in the range of $10^{-3}$ ~$10^{-4}$ M.