• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.354-354
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• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• 한국재료학회지
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• 제2권2호
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• pp.151-156
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• 1992

본 연구에서는 $Ba(OH)_2{\cdot}8H_2O,\;Sr(OH)_2{\cdot}8H_2O$ 및 $Ti(i-OC_3H_7)_4$를 사용하여 졸-겔법에 의해 미세한 $(Ba_{1-x}Sr_{x})TiO_3$ 분말을 제조하였다. TEM 관찰, BET 비표면적측정 및 XRD회절도의 분석결과 $700^{\cric}C$에서 하소한 뚠말의 입자크기는 20~40nm이고 입방정상으로 존재하였다. 또한 XRD 회절도고부터 계산된 격자상수 및 (112)피크의 이동으로부터 고용체분말이 형성되었음을 확인할 수 있었다. 제조된 분말에서의 EDAX 분석을 통한 양이온들의 상대적인 비율 및 소결체에 대한 유전상수의 측정결과로부터 제조된 분말에서 양이온들의 분포가 입자단위에서 균질함을 예상할 수 있었다.

• 한국세라믹학회지
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• 제48권5호
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• pp.368-372
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• 2011

Aluminum nitride (AlN) has excellent thermal conductivity, whereas it has some disadvantage such as low sinterability. In this study, the effects of sintering additive content and sintering condition on thermal conductivity of pressureless sintered AlN ceramics were examined on the variables of 1~3 wt% sintering additive ($Y_2O_3$) content at $1900^{\circ}C$ in $N_2$ atmosphere with holding time of 2~10 h. All AlN specimens showed higher thermal conductivity as the $Y_2O_3$ content and holding time increase. The formation of secondary phases (yttrium aluminates) by reaction of $Y_2O_3$ and $Al_2O_3$ from AlN surface promoted the thermal conductivity of AlN specimens, because the secondary phases could reduce the oxygen contents in AlN lattice. Also, thermal conductivity was increased by long sintering time because of the uniform distribution and the elimination of the secondary phases at the grain boundary by the evaporation effect during long holding time. A carbothermal reduction reaction was also affected on the thermal conductivity. The thermal conductivity of AlN specimens sintered at $1900^{\circ}C$ for 10 h showed 130~200W/mK according to the content of sintering additive.

• 한국자원식물학회지
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• 제11권3호
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• pp.345-352
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• 1998

A Korean endemic and evergreen small tree ' Dendropanax morbifera $L_{EV}$.(Araliaceae)' is a component of evergreen forest and mainly idstributein sourthern region and islands in Korea. A local population of D. morbifera which is located between evergreen and deciduous forest within 50m x 50m quadrate was investigated to ascertain the change of population structure, emergence and growth dynamics of seedlings and saplings, and pattern of spatial distribution by the temproal and spatial expansion of population . The result of analysis of population structure by Importnace Value(IV), evergreen forest showed a high species diversity of evergreen tree species such as Cinnamomum japonicum, Machilus japonica, Neolitsea serica, Daphniphyllum macropodum, Ligustrum japonicum, and etc, in middle and under story than in upper story where Camelia japonica and Quercus acuta were dominant. And in conterminous deciduous fores, the major component of evergreen forest in this region, Camellia japonica, Quercus acuta, evergreen tree of Lauraceae and etc. were abundant in only under story. IV of D. morbifera differed from among three story. In comparative analysis of emergence and growth dynamics of D. morbifera seedlings and saplings between evergreen and deciduous forest, emergece and density of seedlings were significantly greater in evergreen than in deciduous forest, and growth of height and basal diameter of seedlings and saplings were slightly larger in evergreen than in deciduous forest. The spatial distribution patterns by Moristia's index mapping of indivuduals using a lattice method of XY axis within this population showed that seedlings(age up to 2 years) and saplings (age>2 years and height<1m) both evergreen and deciduous forest were more or less aggregated apart from mature trees, and thougth intermediate trees(height>1m and dbh<10cm) had a aggregated distribution pattern, mature trees(dbh>10cm were uniform. In conclusion , the expansion of D. morbfera population from evergreen to deciduous forest accompanied with a mumber of evergreen woody species, and also, emergence and recruitment, and growth of seedlings were greatly influenced moisture and canopy by around community structure.

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Advances in concrete construction
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• 제12권6호
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• pp.479-490
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• 2021

Present research is mainly focused on, microstructural and durability analysis of Graphene Oxide (GO) in Wollastonite (WO) induced cement mortar with silica fume. The study was conducted by evaluating the mechanical properties (compressive and flexural strength), durability properties (water absorption, sorptivity and sulphate resistance) and microstructural analysis by SEM. Cement mortar mix prepared by replacing 10% ordinary portland cement with SF was considered as the control mix. Wollastonite replacement level varied from 0 to 20% by weight of cement. The optimum replacement of wollastonite was found to be 15% and this was followed by four sets of mortar specimens with varying substitution levels of cementitious material with GO at dosage rates of 0.1%, 0.2%, 0.3% and 0.4% by weight. The results indicated that the addition of up to 15%WO and 0.3% GO improves the hydration process and increase the compressive strength and flexural strength of the mortar due to the pore volume reduction, thereby strengthening the mortar mix. The resistance to water penetration and sulphate attack of mortar mixes were generally improved with the dosage of GO in presence of 15% Wollastonite and 10% silica fume content in the mortar mix. Furthermore, FE-SEM test results showed that the WO influences the lattice framework of the cement hydration products increasing the bonding between silica fume particles and cement. The optimum mix containing 0.3% GO with 15% WO replacement exhibited extensive C-S-H formation along with a uniform densified structure indicating that calcium meta-silicate has filled the pores.

• 한국분말재료학회지
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• 제29권1호
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• pp.34-40
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• 2022

Recently, high-entropy carbides have attracted considerable attention owing to their excellent physical and chemical properties such as high hardness, fracture toughness, and conductivity. However, as an emerging class of novel materials, the synthesis methods, performance, and applications of high-entropy carbides have ample scope for further development. In this study, equiatomic (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide powders have been prepared by an ultrahigh-energy ball-milling (UHEBM) process with different milling times (1, 5, 15, 30, and 60 min). Further, their refinement behavior and high-entropy synthesis potential have been investigated. With an increase in the milling time, the particle size rapidly reduces (under sub-micrometer size) and homogeneous mixing of the prepared powder is observed. The distortions in the crystal lattice, which occur as a result of the refinement process and the multicomponent effect, are found to improve the sintering, thereby notably enhancing the formation of a single-phase solid solution (high-entropy). Herein, we present a procedure for the bulk synthesis of highly pure, dense, and uniform FCC single-phase (Fm3m crystal structure) (Hf-Ti-Ta-Zr-Nb)C high-entropy carbide using a milling time of 60 min and a sintering temperature of 1,600℃.

• 한국재료학회지
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• 제34권6호
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• 한국결정성장학회지
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• 제9권1호
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• pp.107-112
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• 1999

고주파 반응성 스퍼터링에 의하여 ZnSe/GaAs 박막을 성장하였다. 박막성장을 위한 본 시스템에서의 최적조건을 찾기 위하여 Ar 압력, sputter 입력전력, 기판온도, 기판과 target 간격의 변화 등을 시도하였다. 성장된 결정의 표면과 격면을 전자현미경으로 관찰했을 때 표면이 균일하게 성장되었으며 기판과 박막의 계면이 평활함을 알 수 있었다. DCRC 측정에 의해 격자 부정합에 의한 변형과 부정합률을 구했다. Photoluminescence 측정으로부터 질소를 주입하지않고 성장한 ZnSe/GaAs 시료는 bound exciton $I_2$세기가 $I_1$보다 우세하게 나타났고 bound exciton $I_2$은 깊은 받개준위인 $I_1\;^d$를 나타냄을 확인할 수 있었다. 성장 중에 질소를 주입한 ZnSe/GaAs 시료에서는 $I_1$ 봉우리가 $I_2$봉우리보다 세기가 매우 컸으며 반폭치값도 작게 나타났다. 이때 bound exciton $I_1$의 근원은 질소의 doping으로 인하여 방출되는 봉우리이며 p형 ZnSe/GaAs 박막으로 성장되었음을 확인하였다.

• Applied Microscopy
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• 제39권2호
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• pp.73-80
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• 2009

다양한 색소체 내에 형성되는 결정체와 미세소관의 분포 및 발달양상을 식물이 수행하는 광합성 양식과 연계하여 꽃피는식물 종들에서 밝혀진 결과에 의하면, 색소체 결정체는 대개 격자 구조를 이루며 기질 또는 티라코이드 내에 형성되나, 미세소관은 비교적 규칙적인 형태로 기질에만 발달한다고 알려져 있다. 격자구조는 막으로 둘러싸이거나 막과는 무관하게 발달하며, 계통학적인 유연관계를 형성하지 않고 C-3 또는 C-4 또는 CAM 광합성을 수행하는 26개의 식물과, 약 56종에서 독립적으로 나타난다는 사실이 조사되었다. 색소체 결정체 및 미세소관 형성에 대한 지속적인 연구는 이들의 구조와 기능에 대하여 새로운 정보를 제공하나, 결정체에 대한 3차원적 입체구조 연구와 미세소관에 대한 분자생물학적인 실험법들이 요구되고 있는 실정이다. 특히, HVEM 고압전자현미경 및 tomography에 의한 연속절편 연구는 결정체의 3-D 입체구조 구현이 가능하여 심도 있는 구조정보를 제공하는 것으로 알려져 있다. 극히 일부의 식물에서만 보고되어 있는 색소체 내 미세소관에 대한 연구에 관해서는 먼저 색소체 기질에서 이들의 형성 시점을 알아내어 기질에서의 식별 및 분리 연구 등이 가능하게 돼야함이 강조되고 있다. 본 논문에서는 꽃피는식물 종들의 여러 색소체 유형에서 보고된 결정체와 미세소관을 조사하여 색소체 내에서 이들의 기능을 광합성과 연계하여 종합적으로 논의하였다.