• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.9C
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• pp.1337-1344
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• 2004

This paper deals with analysis and real-time Implementation of a wide band adaptive multirate speech codec (AMR-WB) using a fixed-point DSP of TI's TMS320C6201. In the AMR-WB codec, input speech is divided into two frequency bands, lower and upper bands, and processed independently. The lower band signal is encoded based on the ACELP algorithm and the upper band signal is processed using the random excitation with a linear prediction synthesis filter. The implemented AMR-WB system used 218 kbytes of program memory and 92 kbytes of data memory. And its proper operation was confirmed by comparing a decoded speech signal sample-by-sample with that of PC-based simulation. Maximum required time of 5 75 ms for processing a frame of 20 ms of speech validates real-time operation of the Implemented system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.897-903
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• 2011

This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.12
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• pp.1580-1587
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• 2000

Rayleigh scattering and laser induced predissociative fluorescence are employed for capturing two-dimensional images of temperature and species concentration in a laminar nonpremixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained ar 248nm. Dispersed LIPF spectra of OH and O$_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and O$_2$ .OH and O$_2$ are excited on the P$_1$(8) line of the A $^2\Sigma ^+(v^`=3) - X^2\pi (V^"=0)$ band and R(17) line of the Schumann-Runge band B $^3\Sigma _u^-(v^`=0) - X ^3\Sigma _g^-(v^"=6)$, respectively. Fluorescence spectra of OH and Hot O$_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.3
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• pp.169-180
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• 2002

Rayleigh scattering and laser induced predissociative fluorescence are used to obtain two-dimensional images of temperature and species concentration in a laminar non-premixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained at 248nm. Planar images of OH and $O_2$ with tunable KrF excimer laser which has a) $0.5cm^{-1}$ linewidth, b) 0.5nm tuning range, c) 150mJ pulse energy, and d) 20ns pulse width are obtained to determine spatial distributions of OH and $O_2$. The technique is based on planar laser induced predissociative fluorescence (PLIPF) in which collisional quenching is almost avoided because of the fast predissociation. Dispersed LIPF spectra of OH and $O_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_2$. OH and $O_2$ are excited on the $P_2$(8) and $Q_1$(11) line of the $A^2{\Sigma}^{+}({\nu}^{'}=3)-X^{2}{\Pi}({\nu}^{''}=o)$ band and R(17) line of the Schumann-Runge band $B^{3}{\Sigma}_{u}{^-}(\nu^{'}=0)-X^{3}{\Sigma}_{g}{^-}({\nu}^{''}=6)$, respectively. Fluorescence spectra of OH and Hot $O_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.237-242
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• 2006

Nowadays, LEDs has been applied to the luminescent devices of various fields because of the invention of high efficient blue chip. Recently, especially, the white LEDs composed of InGaN blue chips and a yellow phosphor (YAG:Ce3+) have been investigated extensively. With the exception of YAG:Ce3+ phosphor, however, there are no reports on yellow phosphor that has significant emission in the 450~470 nm excitation range and this LED system is the rather low color rendering index due to their using two wavelength. Hence, we have attempted to synthesize thiogallate phosphors that efficiently under the long wavelength excitation range in the present case. Among those phosphors, we have synthesized Sr2Ga2S5:Eu2+ phosphor by change the host material of SrGa2S4:Eu2+ which is well known phosphor and we investigated the luminescent properties. In order to obtain the harmlessness and simplification of the synthesis process, sulfide materials and mixture gas of 5 % H2/95 % N2 were used instead of the CS2 or H2S gas. The prepared phosphor shows the yellow color peaking at the 550 nm wavelength and it possible to emit efficiently under the broad excitation band in the range of 300~500 nm. And this phosphor shows high luminescent intensity more than 110 % in comparison with commercial YAG:Ce3+ phosphor and it can be applied for UV LED due to excitation property in UV region.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.489-493
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• 2012

Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

• Smart Structures and Systems
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• v.15 no.4
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• pp.997-1018
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• 2015

Structural health monitoring along with damage detection and assessment of its severity level in non-accessible reinforced concrete members using piezoelectric materials becomes essential since engineers often face the problem of detecting hidden damage. In this study, the potential of the detection of flexural damage state in the lower part of the mid-span area of a simply supported reinforced concrete beam using piezoelectric sensors is analytically investigated. Two common severity levels of flexural damage are examined: (i) cracking of concrete that extends from the external lower fiber of concrete up to the steel reinforcement and (ii) yielding of reinforcing bars that occurs for higher levels of bending moment and after the flexural cracking. The purpose of this investigation is to apply finite element modeling using admittance based signature data to analyze its accuracy and to check the potential use of this technique to monitor structural damage in real-time. It has been indicated that damage detection capability greatly depends on the frequency selection rather than on the level of the harmonic excitation loading. This way, the excitation loading sequence can have a level low enough that the technique may be considered as applicable and effective for real structures. Further, it is concluded that the closest applied piezoelectric sensor to the flexural damage demonstrates higher overall sensitivity to structural damage in the entire frequency band for both damage states with respect to the other used sensors. However, the observed sensitivity of the other sensors becomes comparatively high in the peak values of the root mean square deviation index.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.658-662
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• 2014

$Eu^{2+}/Dy^{3+}$-doped $Sr_2MgSi_2O_7$ powders were synthesized using a solid-state reaction method with flux ($NH_4Cl$). The broad photoluminescence (PL) excitation spectra of $Sr_2MgSi_2O_7:Eu^{2+}$ were assigned to the $4f^7-4f^65d$ transition of the $Eu^{2+}$ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of $Sr_2MgSi_2O_7:Eu^{2+}$ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The $Ba^{2+}$ substitution for $Sr^{2+}$ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between $Ba^{2+}$ and $Sr^{2+}$. The effects of the Eu/Dy ratios on the phosphorescence of $Sr_2MgSi_2O_7:Eu^{2+}/Dy^{3+}$ were investigated by measuring the decay time; the longest afterglow was obtained for $0.01Eu^{2+}/0.03Dy^{3+}$.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.351-356
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• 2014

A spherical $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor for use in white-light-emitting diodes was synthesized using a liquid-state reaction with two precipitation stages. For the formation of phosphor from a precursor, the calcination temperature was $1,100^{\circ}C$. The particle morphology of the phosphor was changed by controlling the processing conditions. The synthesized phosphor particles were spherical with a narrow size-distribution and had mono-dispersity. Upon excitation at 395 nm, the phosphor exhibited an emission band centered at 497 nm, corresponding to the $4f^65d{\rightarrow}4f^7$ electronic transitions of $Eu^{2+}$. The critical quenching-concentration of $Eu^{2+}$ in the synthesized $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor was 5 mol%. A phosphor-converted LED was fabricated by the combination of the optimized spherical phosphor and a near-UV 390 nm LED chip. When this pc-LED was operated under various forward-bias currents at room temperature, the pc-LED exhibited a bright blue-green emission band, and high color-stability against changes in input power. Accordingly, the prepared spherical phosphor appears to be an excellent candidate for white LED applications.