• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.147-148
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• 2006

Sl-Thyristor는 기존의 Power semlconductor인 단일 IGBT,MOSFET과 비교하여 높은 정격 전압과 대전류의 소호가 가능하며 빠른 turn on swithcing time을 가지는 특성이 있다. 하지만 게이트 드라이버를 이용한 Sl-Thyristor의 turn on 구동시에는 전압구동의 특성과 turn 0ff시에는 전류 구동의 특성에 가까운 구동 특성이 요구되기 때문에 스위칭 요구 특성에 맞는 게이트 드라이버의 설계 및 제어가 쉽지 않다. 본 논문은 펄스 파워 어플리케이션으로 Sl-Thyristor(PT-201 5kV/100A)를 사용하여 pulsed power moduiator용 Sl-Thyristor의 게이트 드라이버의 요구인 빠른 turn on switching 특성과 turn off 시 Si-Thyristor 내의 전하를 빨리 제거하기 위한 조건을 제시하고 있다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.932-934
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• 1999

In this paper, the new IGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The simulations are used in order to investigate the effects of the position, width and concentration of trap injection region using 2D device simulator MEDICI. And, their electrical characteristics are analyze and the optimum design parameters are extracted. As a result of simulation, the turn off time for the proposed LIGBT model A by the trap injection is $0.78{\mu}s$. And, the latch up voltage is 3.4V and forward blocking voltage is 168V which are superior to that of conventional structure. In addition, the proposed model is achieved more efficient in switching time and process effort. Therefore, It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• ETRI Journal
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• v.43 no.5
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• pp.891-899
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• 2021

We propose a stray inductance extraction method on power modules of the few-kilovolts/several-hundred-amperes class using only low voltages and low currents. The method incorporates a double-pulse generator, a level shifter, a switching device, and a load inductor. The conventional approach generally requires a high voltage of more than half the power module's rated voltage and a high current of around half the rated current. In contrast, the proposed method requires a low voltage and low current environment regardless of the power module's rated voltage because the module is measured in a turn-off state. Both theoretical and experimental results are provided. A physical circuit board was fabricated, and the method was applied to three commercial power modules with EconoDUAL3 cases. The obtained stray inductance values differed from the manufacturer-provided values by less than 1.65 nH, thus demonstrating the method's accuracy. The greatest advantage of the proposed approach is that high voltages or high currents are not required.

• Journal of Power Electronics
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• v.4 no.3
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• pp.161-168
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• 2004

This paper presents a new circuit topology of high-frequency soft switching commutation boost type PWM chopper-fed DC-DC power converter with a loadside auxiliary passive resonant snubber. In the proposed boost type chopper-fed DC-DC power converter circuit operating under a principle of ZCS turn-on and ZVS turn-off commutation, the capacitor and inductor in the auxiliary passive resonant circuit works as the lossless resonant snubber. In addition to this, the voltage and current peak stresses of the power semiconductor devices as well as their di/dt or dv/dt dynamic stress can be effectively reduced by the single passive resonant snubber treated here. Moreover, it is proved that chopper-fed DC-DC power converter circuit topology with an auxiliary passive resonant snubber could solve some problems on the conventional boost type hard switching PWM chopper-fed DC-DC power converter. The simulation results of this converter are illustrated and discussed as compared with the experimental ones. The feasible effectiveness of this soft witching DC-DC power converter with a single passive resonant snubber is verified by the 5kW, 20kHz experimental breadboard set up to be built and tested for new energy utilization such as solar photovoltaic generators and fuel sell generators.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.3
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• pp.44-49
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• 2007

This paper proposes converter that new soft switching active snubber circuit is added, the resonance energy return to life rate doing maximum whole efficiency increase. Proposed converter adds auxiliary switch and resonance inductor, resonance capacitor, two diodes to existing converter, all switch elements play turn-on/turn-off under soft switching condition and minimized switching losses. Conduction loss department is that watch layer bringing back to life resonance energy by input perfectly. These result proved through simulation and an experiment.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.3
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• pp.230-237
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• 2012

This paper proposes an active-clamp ac-dc converter with direct power conversion that has a simple structure and achieves high efficiency. The proposed converter is derived by integrating the step-down ac chopper and the output-voltage doubler. The proposed converter provides direct ac-dc conversion and dc output voltage without using any full-bridge diode rectifier. The step-down ac chopper using an active-clamp mechanism serves to clamp the voltage spike across the main switches and provides zero-voltage turn-on switching. The resonant-current path formed by the leakage inductance of the transformer and the resonant capacitor of the output-voltage doubler achieves the zero-current turn-off switching of the output diodes. The operation principle of the converter is analyzed and verified. A 500W prototype is implemented to show the performance of the proposed converter. The prototype provides maximum efficiency of 95.1% at the full load.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• International Journal of Control, Automation, and Systems
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• v.5 no.6
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• pp.652-662
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• 2007

This paper presents a new and simple method for sensorless operation of matrix converter drives using a constant air-gap flux and the imaginary power flowing to the motor. To improve low-speed sensorless performance, the non-linearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop are modeled using PQR transformation and compensated using a reference current control scheme. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system. Experimental results are shown to illustrate the feasibility of the proposed strategy.