• Proceedings of the KIEE Conference
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• summer
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• pp.1226-1228
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• 2004

A novel lossless passive snubber is proposed for soft switching the boost type converters. The proposed snubber does not use any auxiliary switches. but uses two identical snubber capacitors which are charged in parallel at turn off of the main switch and discharged in series at turn on automatically, and the discharged energy is recovered effectively (more than $95[\%]$ recovery) into the output capacitor. Thus, the snubber provides zero voltage switching for the converter main switch, reducing both the turn off losses and the electromagnetic interference(EMI) noise, whitch improves the converter performance. The experimental results of a 20[kHz] 600[W] DC-DC boost converter and a single-phase AC-DC boost rectifier with the new snubber are presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.1
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• pp.99-104
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• 1999

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme which senses the collector voltage and controls the gate signal actively limits the overvoltage. The new series connected IGBT gate driver is made and its validity is verified by the experimental results in the series connected IGBT circuit.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• Journal of Power Electronics
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• v.17 no.1
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• pp.41-55
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• 2017

This study proposes a novel zero voltage transition (ZVT) pulse width modulation (PWM) DC-DC interleaved boost converter with an active snubber cell. All the semiconductor devices in the converter turn on and off with soft switching to reduce the switching power losses and improve the overall efficiency. Through the interleaved approach, the current stresses of the main devices and the ripple of the output voltage and input current are reduced. The main switches turn on with ZVT and turn off with zero voltage switching (ZVS). The auxiliary switch turns on with zero current switching (ZCS) and turns off with ZVS. In addition, the snubber cell does not create additional current or voltage stress on the main switches and main diodes. The proposed converter can smoothly achieve soft switching characteristics even under light load conditions. The theoretical analysis and operating stages of the proposed converter are made for the D > 50% and D < 50% modes. Finally, a prototype of the proposed converter is implemented, and the experimental results are given in detail for 500 W and 50 kHz. The overall efficiency of the proposed converter reached 95.5% at nominal output power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.521-524
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• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Journal of Power Electronics
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• v.16 no.4
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• pp.1298-1305
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• 2016

This paper presents the development of a short-circuit protection mechanism on a high voltage switch (HVS) board which is built by a series connection of semiconductor switches. The HVS board is able to quickly detect and limit the peak fault current before the signal board triggers off a gate signal. Voltage clamping techniques are used to safely turn off the short-circuit current and to prevent overvoltage of the series-connected switches. The selection method of the main devices and the development of the HVS board are described in detail. Experimental results have demonstrated that the HVS board is capable of withstanding a short-circuit current at a rated voltage of 10kV without a di/dt slowing down inductor. The corresponding short-circuit current is restricted to 125 A within 100 ns and can safely turn off within 120 ns.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• International Journal of Precision Engineering and Manufacturing
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• v.2 no.1
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• pp.33-42
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• 2001

In switched reluctance motor(SRM) deives, the turn-on and turn-off angles of each phase switch should be accurately controlled for accuracy and efficiency. The accuracy of the switching angles is mainly dependent upon the resolution of the encoder and the sampling period of the microprocessor, that are used to provide the information of the rotor position and to implement a control algorithm of the SRM, respectively. Thus, the higher the speed of the SRM is increased, the larger the amount of the switching angle deviations are from preset turn-on and turn-off angles. Consequently, the motor can not be driven stably high speed region. There fore, a simples and low cost encoder suitable for the practical and stable SRM drive is proposed and the control algorithm to provide the switching signals using a simple digital logic circuit is also presented for a wide speed range operation.