• Bulletin of the Korean Chemical Society
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• 제25권12호
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• pp.1881-1888
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• 2004

A series of $NiO-TiO_2$/$WO_3$ catalysts was prepared by drying powdered $Ni(OH)_2-Ti(OH)_4$ with ammonium metatungstate aqueous solution, followed by calcining in air at high temperature. Characterization of prepared catalysts was performed by using FTIR, Raman, XPS, XRD, and DSC and by measuring surface area. Upon the addition of tungsten oxide to titania up to 25 wt%, the specific surface area and acidity of catalysts increased in proportion to the tungsten oxide content due to the interaction between tungsten oxide and titania. Since the -$TiO_2$/stabilizes the tungsten oxide species, for the samples equal to or less than 25 wt%, tungsten oxide was well dispersed on the surface of titania, but for the samples containing above 25 wt%, the triclinic phase of $WO_3$ was observed at calcination temperature above 400 $^{\circ}C$. The catalytic activities of 10-NiO-$TiO_2$/$WO_3$ for 2-propanol dehydration and cumene dealkylation were correlated with the acidity of catalysts measured by ammonia chemisorption method. NiO may attract reactants and enhance the local concentration of reactants near the acid sites, consequently showing the increased catalytic activities.

• 전자공학회논문지D
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• 제34D권6호
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.422-423
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• 2006

Ultrasonic-milling of metal oxide nanopowders for the preparation of tungsten heavy alloys was investigated. Milling time was selected as a process variable. XRD results of metal oxide nanopowders ultrasonic-milled for 50 and 100h showed that mean crystallite size reduced with increasing milling time and there was no evidence of contamination or change of composition by impurities. It was found that nanocomposite powders reduced at $800^{\circ}C$ in $H_2$ atmosphere had a composition of 93.1W-4.9Ni-2.0Fe by EDX analysis. Hardness of sintered samples of 50 and 100h was 390 and 463 Hv, respectively, which corresponds to the hardness of commercial products.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.883-886
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• 1999

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.

• 한국분말재료학회지
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• 제28권4호
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• pp.342-351
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• 2021

Because of its unique properties, tungsten is a strategic and rare metal used in various industrial applications. However, the world's annual production of tungsten is only 84000 t. Ammonium paratungstate (APT), which is used as the main intermediate in industrial tungsten production, is usually obtained from tungsten concentrates of wolframite and scheelite by hydrometallurgical treatment. Intermediates such as tungsten trioxide, tungsten blue oxide, tungstic acid, and ammonium metatungstate can be derived from APT by thermal decomposition or chemical attack. Tungsten metal powder is produced through the hydrogen reduction of high-purity tungsten oxides, and tungsten carbide powder is produced by the reaction of tungsten powder and carbon black powder at 1300-1700℃ in a hydrogen atmosphere. Tungsten scrap can be divided into hard and soft scrap based on shape (bulk or powder). It can also be divided into new scrap generated during the production of tungsten-bearing goods and old scrap collected at the end of life. Recycling technologies for tungsten can be divided into four main groups: direct, chemical, and semi-direct recycling, and melting metallurgy. In this review, the current status of tungsten smelting and recycling technologies is discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.515-520
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• 2005

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.

• 한국진공학회지
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• 제1권3호
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• pp.376-381
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• 1992

Tungsten silicide films were deposited on the highly phosphorus-doped poly Si/SiO2/Si substrates by Low Pressure Chemical Vapor Deposition. They were heat treated in different conditions. XTEM, SIMS and high frequency C-V analysis were conducted for characterization. It can be concluded that outdiffusion of phosphours impurity throught the silicide films lead to its depletion in the poly-Si gate region near the gate oxide, resulting in loss of capacitance and increase of effective gate oxide thickness.

• 한국산업보건학회지
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• 제26권2호
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• pp.119-138
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• 2016

Objectives: The purpose of this study is to review size, shape, and crystal structure-dependent toxicity of major metal oxide particles such as silicon dioxide, tungsten trioxide, aluminum oxide, and titanium dioxide as byproducts generated in semiconductor fabrication facility. Methods: To review the toxicity of major metal oxide particles, we used various reported research and review papers. The papers were searched by using websites such as Google Scholar and PubMed. Keyword search terms included '$SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$) toxicity', 'health effects $SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$). Additional papers were identified in references cited in the searched papers. Results: In various cell lines and organs of human and animals, cytotoxicity, genotoxicity, hepatoxicity, fetotoxicity, neurotoxicity, and histopathological changes were induced by silicon dioxide, tungsten trioxide, aluminium oxide, and titanium dioxide particles. Differences in toxicity were dependent on the cell lines, organs, doses, as well as the chemical composition, size, surface area, shape, and crystal structure of the particles. However, the doses used in the reported papers were higher than the possible exposure level in general work environment. Oxidative stress induced by the metal oxide particles plays a significant role in the expression of toxicity. Conclusions: The results cannot guarantee human toxicity of the metal oxide particles, because there is still a lack of available information about health effects on humans. In addition, toxicological studies under the exposure conditions in the actual work environment are needed.

• 한국분말재료학회지
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• 제23권5호
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• pp.372-378
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• 2016

This study focuses on the development of an alkaline leaching hydrometallurgy process for the recovery of tungsten from WC/Co hardmetal sludge, and an examination of the effect of the process parameters on tungsten recovery. The alkaline leaching hydrometallurgy process has four stages, i.e., oxidation of the sludge, leaching of tungsten by NaOH, refinement of the leaching solution, and precipitation of tungsten. The WC/Co hardmetal sludge oxide consists of $WO_3$ and $CoWO_4$. The leaching of tungsten is most affected by the leaching temperature, followed by the NaOH concentration and the leaching time. About 99% of tungsten in the WC/Co hardmetal sludge is leached at temperatures above $90^{\circ}C$ and a NaOH concentration above 15%. For refinement of the leaching solution, pH control of the solution using HCl is more effective than the addition of $Na_2S{\cdot}9H_2O$. The tungsten is precipitated as high-purity $H_2WO_4{\cdot}H_2O$ by pH control using HCl. With decreasing pH of the solution, the tungsten recovery rate increases and then decrease. About 93% of tungsten in the WC/Co hardmetal sludge is recovered by the alkaline leaching hydrometallurgy process.