• Title/Summary/Keyword: trimming circuit

Search Result 15, Processing Time 0.054 seconds

Study of Laser Trimming and Cutting of Printed Circuit Board by using UV Laser with Nanosecond Pulse Width (나노초 펄스폭을 갖는 자외선 레이저를 이용한 전자회로기판의 저항체 트리밍과 절단공정 특성에 관한 연구)

  • Ryu, Kwang-Hyun;Shin, Suk-Hoon;Park, Hyeong-Chan;Nam, Gi-Jung;Kwon, Nam-Ic
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.27 no.10
    • /
    • pp.23-28
    • /
    • 2010
  • Resistance trimming and cutting processes of printed circuit board by making use of high power UV laser with nano-second pulse width have been proposed and investigated experimentally. Also laser-based application system with high flexibility and complex has been designed and adopted power controller, auto beam size control, auto-focusing and control program developed for ourselves. The function of each module shows that they can be reliable for industrial equipments. Resistance trimming method used a plunge and double cut process with $20{\mu}m$ spot size beam. Results show that double cut process is more effective to control resistance trimming in precision than plunge cut process.

A Study on the Effect of Cab Signal through Unbalance of the Traction Return Current (귀선전류의 불평형에 따른 차상신호에 미치는 영향에 관한 연구)

  • Lee, Tae-Hoon;Park, Ki-Bum;Sung, Soon-Uk
    • Proceedings of the KSR Conference
    • /
    • 2007.05a
    • /
    • pp.1694-1700
    • /
    • 2007
  • In the electrified section, both of return current and signal current are flowing in the same rail in common. But signal current shall be allowed to flow in the specific track circuit and not in the other circuit while the traction return current shall come back to power sub-station. This paper presents measuring system that use both sensor and antenna. The aim of the system is to achieve the difference in current between the two rails and the presence of trimming capacitors. In order to improve the transmission level, trimming capacitors are connected between the two rails at constant spacing. To maintain the balance of traction return current, rails of both sides may be jointed by the so-called SVPMM. The traction return current is sometimes unbalanced owing to the ill-contact of SVPMM. In this paper, we propose a diagnosis method based on a short-circuited current(Icc), trimming capacitors and traction return current measured by Korail inspection vehicles. Whether Icc is good or bad depends not only on the presence of trimming capacitors but also on the unbalance of the traction return current.

  • PDF

A 70 MHz Temperature-Compensated On-Chip CMOS Relaxation Oscillator for Mobile Display Driver ICs

  • Chung, Kyunghoon;Hong, Seong-Kwan;Kwon, Oh-Kyong
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.16 no.6
    • /
    • pp.728-735
    • /
    • 2016
  • A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

Sensor signal processing device for USN application and general purpose (USN응용과 범용목적에 적용가능한 센서 신호처리기)

  • Park, Chan-Won;Kim, Il-Hwan;Chun, Sam-Sug
    • Journal of Sensor Science and Technology
    • /
    • v.19 no.3
    • /
    • pp.230-237
    • /
    • 2010
  • In sensor signal conditioning and processing, offset and drift characteristics of an operational amplifier are an important factor when the amplifier is used for a precise sensor signal amplifier. In order to use it in high accuracy, an expensive trimming or a complex compensation circuit is required. This paper presents the improved sensor signal conditioning and processing device for ubiquitous sensor network(USN) application or general purpose by developing a hardware of the circuit for reducing the offset voltage and drift characteristics, and a software for its control and sensor signal processing. We realize better offset voltage and drift characteristics of the signal conditioning circuit using low cost operational amplifiers. The experimental results show that this technique is effective in improving the performance of the sensor signal processing device.

Optimization of Packaging Design of TWEAM Module for Digital and Analog Applications

  • Choi, Kwang-Seong;Lee, Jong-Hyun;Lim, Ji-Youn;Kang, Young-Shik;Chung, Yong-Duck;Moon, Jong-Tae;Kim, Je-Ha
    • ETRI Journal
    • /
    • v.26 no.6
    • /
    • pp.589-596
    • /
    • 2004
  • Packaging technologies for a broadband and narrowband modulator with a traveling wave electro-absorption modulator (TWEAM) device were developed. In developing a broadband modulator, the effects of the device and packaging designs on the broadband performance were investigated. The optimized designs were obtained through a simulation with the result that we developed a broadband modulator with a 3 dB bandwidth of 38 GHz in the electrical-to-optical (E/O) response, an electrical return loss of less than -10 dB at up to 26 GHz, an rms jitter of 1.832 ps, and an extinction ratio of 5.38 dB in a 40 Gbps non-return to zero (NRZ) eye diagram. For analog application, the effect of the RF termination scheme on the fractional bandwidth was studied. The microstrip line with a double stub as a matching circuit and a laser trimming process were used to obtain an $S_{11}$ of -34.58 dB at 40 GHz and 2.9 GHz bandwidth of less than -15 dB.

  • PDF

A comparison between thick-film ZnO and $SnO_2$ gas sensors for CO gas detection (CO 검지용 후막형 ZnO와 $SnO_2$ 가스센서의 비교)

  • Kim, Bong-Hee;Yi, Seung-Hwan;Kang, Hee-Bok;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
    • /
    • 1991.07a
    • /
    • pp.209-212
    • /
    • 1991
  • Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

  • PDF

Design of Digital Calibration Circuit of Silicon Pressure Sensors (실리콘 압력 센서의 디지털 보정 회로의 설계)

  • Kim, Kyu-Chull
    • Journal of IKEEE
    • /
    • v.7 no.2 s.13
    • /
    • pp.245-252
    • /
    • 2003
  • We designed a silicon pressure sensor interface circuit with digital calibration capability. The interface circuit is composed of an analog section and a digital section. The analog section amplifies the weak signal from the sensor and the digital section handles the calibration function and communication function between the chip and outside microcontroller that controls the calibration. The digital section is composed of I2C serial interface, memory, trimming register and controller. The I2C serial interface is optimized to suit the need of on-chip silicon microsensor in terms of number of IO pins and silicon area. The major part of the design is to build a controller circuit that implements the optimized I2C protocol. The designed chip was fabricated through IDEC's MPW. We also made a test board and the test result showed that the chip performs the digital calibration function very well as expected.

  • PDF

Compact Dual-Band Three-Way Metamaterial Power-Divider with a Hybrid CRLH Phase-Shift Line

  • Jang, Kyeongnam;Kahng, Sungtek;Jeon, Jinsu;Wu, Qun
    • Journal of electromagnetic engineering and science
    • /
    • v.14 no.1
    • /
    • pp.15-24
    • /
    • 2014
  • A compact dual-band three-way metamaterial power divider is proposed that has three in-phase outputs. Fully printed composite rightand left-handed (CRLH) unequal and equal power dividers are first implemented for 900-MHz and 2.4-GHz bands with the power-division ratios of 2:1 and 1:1, respectively. An initial 1:1:1 power divider is then achieved by incorporating the input of the two-way equal block into an output of the unequal block, and trimming the interconnection parameters. The condition of an identical phase at the three outputs of the power divider is then met by devising a hybrid CRLH phase-shift line to compensate for the different phase errors at the two frequencies. This scheme is confirmed by predicting the performance of the power divider with circuit analysis and full-wave simulation and measuring the fabricated prototype. They results show agreement; the in-phase outputs as well as the desirable power-division are accomplished and outdo the conventional techniques.

Charateristics of VCO(Voltage Controlled Oscillator) using LTCC Technology (LTCC기술을 이용한 VCO(Voltage Controlled Oscillator) 개발)

  • 유찬세;이영신;이우성;곽승범;강남기;박종철
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.8 no.1
    • /
    • pp.61-64
    • /
    • 2001
  • VCO(Voltage Contolled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, YCO need to hove much smaller size with better characteristics. Buried type passive components of L, C, R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and measurement circuit designed by ourselve. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscilltor for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3~2.36 GHz band is developed.

  • PDF

Design of 4Kb Poly-Fuse OTP IP for 90nm Process (90nm 공정용 4Kb Poly-Fuse OTP IP 설계)

  • Hyelin Kang;Longhua Li;Dohoon Kim;Soonwoo Kwon;Bushra Mahnoor;Panbong Ha;Younghee Kim
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.16 no.6
    • /
    • pp.509-518
    • /
    • 2023
  • In this paper, we designed a 4Kb poly-fuse OTP IP (Intellectual Property) required for analog circuit trimming and calibration. In order to reduce the BL resistance of the poly-fuse OTP cell, which consists of an NMOS select transistor and a poly-fuse link, the BL stacked metal 2 and metal 3. In order to reduce BL routing resistance, the 4Kb cells are divided into two sub-block cell arrays of 64 rows × 32 rows, with the BL drive circuit located between the two 2Kb sub-block cell arrays, which are split into top and bottom. On the other hand, in this paper, we propose a core circuit for an OTP cell that uses one poly-fuse link to one select transistor. In addition, in the early stages of OTP IP development, we proposed a data sensing circuit that considers the case where the resistance of the unprogrammed poly-fuse can be up to 5kΩ. It also reduces the current flowing through an unprogrammed poly-fuse link in read mode to 138㎂ or less. The poly-fuse OTP cell size designed with DB HiTek 90nm CMOS process is 11.43㎛ × 2.88㎛ (=32.9184㎛2), and the 4Kb poly-fuse OTP IP size is 432.442㎛ × 524.6㎛ (=0.227mm2).