• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.913-916
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• 2005

This paper describes the design, fabrication and characteristics of a piezoelectric valve using MCA(Multilayer ceramic actuator). The MCA valve, which has the buckling effect, consists of three separate structures; MCA, a valve actuator die and an a seat die. The design of the actuator die was done by FEM modeling and displacement measurement, respectively. The valve seat die with 6 trenches was made, and the actuator die, which is driven to MCA under optimized conditions, was also fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the seat/actuator die structure. PDMS sealing pad was fabricated to minimize a leak-rate. It was also bonded to seat die and SUS package. The MCA valve shows a flow rate of 9.13 sccm at a supplied voltage of 100 V with a 50 % duty cycle, maximum non-linearity was 2.24 % FS and leak rate was $3.03{\times}10^{-8}pa$. $m^3/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.118-119
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• 2009

This paper presents the feature profile evolution silicon deep trench etching, which is very crucial for the commercial wafer process application. The silicon deep trenches were etched with the SF6 gas & Hbr gas based process recipe. The optimized silicon deep trench process resulted in vertical profiles (87o~90o) with loading effect of < 1%. The process recipes were developed for the silicon deep trench etching applications. This scheme provides vertically profiles without notching of top corner was observed. In this study, the production of SF6 gas based silicon deep trench etch process much more strongly than expected on the basis of Hbr gas trench process that have been investigated by scanning electron microscope (SEM). Based on the test results, it is concluded that the silicon deep trench etching shows the sufficient profile for practical MOS FET silicon deep trench technology process.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.619-626
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• 2004

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.9-9
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• 2011

The transfer of nano-science accomplishments into technology is severely hindered by a lack of understanding of barriers to nanoscale manufacturing. The NSF Center for High-rate Nanomanufacturing (CHN) is developing tools and processes to conduct fast massive directed assembly of nanoscale elements by controlling the forces required to assemble, detach, and transfer nanoelements at high rates and over large areas. The center has developed templates with nanofeatures to direct the assembly of carbon nanotubes and nanoparticles (down to 10 nm) into nanoscale trenches in a short time (in seconds) and over a large area (measured in inches). The center has demonstrated that nanotemplates can be used to pattern conducting polymers and that the patterned polymer can be transferred onto a second polymer substrate. Recently, a fast and highly scalable process for fabricating interconnects from CMOS and other types of interconnects has been developed using metallic nanoparticles. The particles are precisely assembled into the vias from the suspension and then fused in a room temperature process creating nanoscale interconnect. The center has many applications where the technology has been demonstrated. For example, the nonvolatile memory switches using (SWNTs) or molecules assembled on a wafer level. A new biosensor chip (0.02 $mm^2$) capable of detecting multiple biomarkers simultaneously and can be in vitro and in vivo with a detection limit that's 200 times lower than current technology. The center has developed the fundamental science and engineering platform necessary to manufacture a wide array of applications ranging from electronics, energy, and materials to biotechnology.

• Journal of the Korean Dietetic Association
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• v.16 no.4
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• pp.318-331
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• 2010

The objectives of this study were to investigate the status of accidents and to assess hazards in institutional foodservices in the Changwon and Masan areas. A survey was conducted from February 1 to March 31, 2009 using questionnaires, and 142 dietitians participated. The dietitians' perception of accident risks in workplace averaged 3.11 points. Forty-five percent of the respondents responded that accidents had occurred more than once between 2006 and 2008. In addition, 28.2% of the respondents experienced employee absences or turnover due to accidents during Year 2008. 'Musculoskelectal injuries or disorders (65.5%)', 'slips or falls (64.8%)', 'burns (57.7%)', and 'cuts and punctures (48.6%)' were the predominant accidents in foodservice. 'Knives (76 points)', 'steam kettles (41 points)', 'vegetable cutters (34 points)' and 'turn kettles (26 points)' were the equipment with severe accidents, such as burns or cut injuries. Among foodservice processes, 'carpal tunnel syndrome while washing (2.83 points)', 'burned by frying oil (2.64 points)', 'cut by sharp tools (2.55 points)', 'musculoskelectal injury by moving heavy weight food materials (2.41 points)', and 'injury by slipping on wet workplace floors and trenches (2.19 points)' were the most frequently occurring accidents at foodservice sites. To prevent safety accidents, dietitians' perceptions of safety supervision should be improved, and therefore, it is necessary they receive safety education.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.235-239
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• 2002

A new method for deep trench isolation using selective growth of polycrystalline silicon is proposed. In this method, trench filling is performed by forming polysilicon-inner sidewalls within the trench, and then selectively growing them by reduced chemical vapor deposition using $SiH_2C1_2$gas at $1100^{\circ}C$. The surface profiles of filled trenches are determined mainly by the initial depth of inner sidewalls and the total thickness of selective growth. No chemical mechanical polishing(CMP) process is needed in this new method, which makes the process flow simpler and more reliable in comparison with the conventional method using CMP process.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1295-1302
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• 2006

Controlled low-strength material(CLSM) which is easily excavated and also known as flowable material, is commonly used as a backfill in utility trenches and other applications. In this study, a rapid-setting flowable material a kind of CLSM made with a field soil were evaluated by an experimental study. The properties ordinarily desired from the mix are: (a) flow under gravity; (b) hardening for early workability(after 4 hours)and cover; and (c) ultimate strength low enough to allow ready excavation. Fluidity of fresh material is evaluated using a simple spread test. Hardening is measured by a mortar penetrometer, and these values are correlated with unconfined compressive strength. It is desirable to keep the ultimate strength to less than $5.6kg/cm^2$ somewhat less target strength is selected for the 28-day value.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.65-71
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• 2007

For chip-stack package applications, Cu filling characteristics into trench vias of $75{\sim}10\;{\mu}m$ width and 3 mm length were investigated with variations of the electroplating current density and the speed of a rotating disc electrode (RDE). Cu filling characteristics into trench vias were improved with increasing the RDE speed. There was a Nernst relationship between half width of trench vias of Cu filling ratio higher than 95% and the minimum RDE speed, and the half width of trenches with 95% Cu filling ratio was linearly proportional to the reciprocal of root of the minimum RED speed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.129-132
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• 2004

This paper describes the design, fabrication and characteristics of a piezoelectric valve using MCA(Multilayer ceramic actuator). The MCA valve, which has the buckling effect, consists of three separate structures; MCA, a valve actuator die and an a seat die. The design of the actuator die was done by FEM modeling and displacement measurement, respectively. The valve seat die with 6 trenches was made, and the actuator die, which is driven to MCA under optimized conditions, was also fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the seat/actuator die structure. PDMS sealing pad was fabricated to minimize a leak-rate. It was also bonded to seat die and SUS package. The MCA valve shows a flow rate of 9.13 sccm at a supplied voltage of 100 V with a 50 % duty cycle, maximum non-linearity was 2.24 % FS and leak rate was $3.03{\times}10^{-8}\;pa{\cdot}m^3/cm^2$. Therefore, the fabricated MCA valve is suitable for a variety of flow control equipment, a medical bio-system, automobile and air transportation industry.