• Korean Journal of Materials Research
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• v.16 no.2
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• pp.106-110
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• 2006

We have investigated the effect of the experimental variables such as temperature and pressure on conformality of Co films deposited over high aspect ratio trenches using $Co_2(CO)_8$ as a precursor. The results show that the conformality of Co films is a strong function of temperature and process pressure. Lowering the pressure and temperature significantly improves the conformality. As the pressure decreases from 0.6 Torr to 0.2 Torr at $50^{\circ}C$, the bottom coverage of Co films over $0.2{\mu}m$ width trenches with an aspect ratio of 13 to 1 significantly increases to 85%. However, further increasing the temperature from 50 to $60^{\circ}C$ at the pressure of 0.2 Torr degrades the bottom coverage to 14%. In contrast, the extremely low pressure of 0.03 Torr allows the excellent conformal deposition of Co films up to $70^{\circ}C$. This can be attributed to the suppression of homogeneous reaction in the gas phase, which can create the intermediate products with high sticking coefficient. In addition, the Co films deposited at $50^{\circ}C$ show the low resistivity with negligible contamination. As a result, the newly developed Co process using MOCVD can be implemented into the next generation devices with complex shapes.

• Korean Journal of Optics and Photonics
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• v.27 no.4
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• pp.127-132
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• 2016

In this paper, a trench structure was fabricated by femtosecond-laser machining to eliminate thermal crosstalk in a multichannel variable optical attenuator (VOA), to prevent decreasing attenuation efficiency of the VOA. Trenches of a variety of widths and depths were fabricated on the VOA chips by femtosecond-laser processing. After the machining, attenuation according to current change was observed in each VOA chip module with trenches. As a result, we could observe high responsivity of attenuation and low power consumption, and that the heat of each channel barely influenced other channels.

• Journal of the FoodService Safety
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• v.2 no.2
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• pp.103-110
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• 2021

This study was conducted to compare and evaluate the difference in washing and disinfection when the Hazard Analysis and Critical Control Point (HACCP) protocol was applied to foodservice operations. The results of the survey were as follows: Among the 116 foodservice operations surveyed, 67.2% were HACCP-compliant and 32.8% were not HACCP-compliant. Also, 62.9% served meals once daily, and 79.3% conducted food safety education once a month. Compared to HACCP non-compliant foodservice operations, the disinfection performance of HACCP-compliant operations was significantly better concerning worktables (p<0.001), food inspection tables (p<0.001), preparation tables for distribution (p<0.01), serving tables (p<0.01), overflow and trenches(p<0.05), sinks (p<0.05), and insect attracting lamps (p<0.01). Similarly, the disinfection performance of HACCP-compliant foodservice operations was significantly better for 18 cooking utensils and personal tools such as food slicers (p<0.001), multiple cooking machines (p<0.05), tray carts (p<0.001), stainless steel tools (p<0.001), rubber gloves (p<0.05). Worktables (45.1%), serving tables (29.6%), sinks (37.0%), and scales (21.6%) were most often disinfected 'at the end of each task', while food inspection tables (36.5%), food preparation tables for distribution (31.2%), dish machines (34.2%), overflow and trenches (25.7%), and floors (25.8%) were most often disinfected 'once a day'. All cooking utensils were most often disinfected 'at the end of each task'. 'Chemical disinfection' was most frequently used in all foodservice facilities. To improve the food safety management of foodservice operations, it is necessary to apply the HACCP protocol and comply with the washing and disinfection manual.

• The Journal of the Acoustical Society of Korea
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• v.20 no.3E
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• pp.31-37
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• 2001

Finite element model of a cMUT is constructed using the commercial code ANSYS to analyze the cross talk mechanism. Calculation results of the complex load impedance seen by single capacitor cells are presented, and then followed by a calculation of the plane wave real load impedance seen by a parallel combination of many cells that are used to make a transducer. Cross talk between 1-D array elements is found to be due to two main sources: coupling through a Stoneley wave propagating at the transducer-water interface and coupling through Lamb waves propagating in the substrate. To reduce the cross talk level, the effect of various structural variations of the substrate are investigated, which include a change of its thickness and etched trenches or polymer walls between array elements.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.257-260
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• 2003

We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.4 no.1
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• pp.1-9
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• 1992

Eigen Function Expansion Method(EFEM) and Plane Wave Approximation are employed to study the propagation of linear water waves over trenches. The properties of trapped waves due to depth and ambient current discontinuities and the effect of evanescent modes on wave propagations are investigated. Special attention is paid to the trapped waves, and not only 3-D plots but also B-D plots of wave propagation are presented.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.455-459
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• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.

• Tuberculosis and Respiratory Diseases
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• v.39 no.1
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• pp.1-6
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• 1992

The diagnosis of tuberculosis is usually established using staining and culturing techniques. Fluorescent stains have improved the sensitivity of direct microscopy. Improved culture media coupled with radiometric means of detecting early mycobacterial growth have shortened the time needed for cultural diagnosis. Rapid immunodiagnostic techniques based on the detection of mycobacterial antigen or of antibodies to theses antigens have not, however, come into widespread clinical use. The DNA or RNA hybridization tests with labeled specific probes which have been described so far are not sensitive enough to be used for clinical speicimens without prior culturing. The advent of the polymerase chain reaction (PCR) has opened new possibilities for diagnosis of microbial infections. This technique has already been applied to a number of microorganisms. In the field of mycobacteria the PCR has been used to identify and to detect DNAs extracted from various mycobacteria. However, despite the extraordinary enthusiasm surrounding this technique and the considerable investiment, PCR has not emerged from the developmental "trenches" in the passed several years. It may be a considerable lenth of time before clinical microbiology laboratories become PCR playgrounds because many details remain to be worked out.