• 한국수자원학회논문집
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• 제53권10호
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• pp.871-876
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• 2020

임해발전소의 냉각수 배출구 인근과 준설된 해역을 전파하는 파랑의 특성을 이해하는 것은 임해발전소 건설과 운영에 매우 중요하다. 본 연구에서는 (1) 배출구 주변 외부 흐름과 (2) 준설된 해저지형을 나타내는 함몰지형에 의한 파랑의 반사율을 고유함수전개법을 이용하여 해석하였다. 먼저, 외부흐름을 나타내기 위한 격자수와 소멸파수의 최적값을 수렴 테스트를 통해 산정하였다. 그리고 ¹⁾외부흐름의 속도, ²⁾외부흐름의 폭, ³⁾함몰지형 간 거리, ⁴⁾함몰지형의 개수에 따른 반사율 변화 정도를 분석하였다. 분석결과, 함몰지형 수와 거리에 따른 반사율이 외부흐름의 속도와 폭에 따른 반사율보다 더 민감한 결과를 보였다. 또한, 외부흐름의 영향이 작을지라도 천해와 천해부근 상대수심 (0.01 < kh ≦ 0.70)에서는 외부흐름의 영향을 무시할 수 없다는 것을 확인하였다.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 1997년도 춘계 학술발표회 논문집 Proceedings of EESK Conference-Fall 1997
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• pp.152-159
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• 1997

An analytical method is developed to study the propagation of surface waves across infilled trenches. The Green's function technique is used to estimate the reflection and transmission coefficients of Rayleigh waves across a semi-infinite plate inserted between two homogeneous quarter-spaces. After validating the method against experimental data, influence of the material contrast and the angle of incidence on the screening effectiveness of an infilled trench is examined.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 1998년도 춘계 학술발표회 논문집 Proceedings of EESK Conference-Spring 1998
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• pp.106-112
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• 1998

A numerical experiment is conduced to study the wave screening effectiveness of wave barriers which are constructed to reduce the ground-transmitted vibration. The finite element method is used for the simulation of the wave propagation behavior. In order to reduce the computational burden the absorbing boundary's one employed. Validity of the numerical model is checked by comparing the results with the published data. The screening effectiveness of the in filled trenches is then studied for different trench dimensions and material properties.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1998년도 봄 학술발표회 논문집
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• pp.383-389
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• 1998

A numerical study is conducted to examine the wave scattering at infilled trenches which may be constructed to reduce the ground-transmitted vibration. The finite element method is used for the simulation of the wave propagation in the semi-infinite region. In order to keep the computational burden manageable, the absorbing boundaries are employed. The numerical technique is validated by modeling a published problem. The results are shown to be in good agreement with the published data. The screening effectiveness of the infilled trenches is then studied for different trench dimensions and material properties.

• Journal of Electrical Engineering and Technology
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• 제4권4호
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.197-201
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• 2002

This paper presents optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro electro mechanical system) applications using SOI and trench structures. The micro-heaters are based on a thermal measurement principle and contains thermal isolation regions of 10 ${\mu}m$-thick Si membranes consisting of oxide-filled trenches in the SOI membrane rim. The micro-heaters were fabricated with Pt-RTD on the same substrate via MgO buff layer between Pt thin-film and $SiO_2$ layer. The thermal characteristics of micro-heater with trench-free SOI membrane structure was $280^{\circ}C$ at input power 0.9 W; in the presence of 10 trenches, it was $580^{\circ}C$ due to reduction of the external thermal loss. Therefore, a micro-heater with trenches in SOI membrane rim structure provides a powerful and versatile alternative technology for enhancing the performance of micro-thermal sensors and actuators.

• Structural Engineering and Mechanics
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• 제11권5호
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• pp.503-518
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• 2001

In this paper, the procedure for deriving an infinite element that is compatible with the quadrilateral Q8 element is first summarized. Enhanced by a self mesh-expansion procedure for generating the impedance matrices of different frequencies for the region extending to infinity, the infinite element is used to simulate the far field of the soil-structure system. The structure considered here is of the box type and the soils are either homogeneous or resting on a bedrock. Using the finite/infinite element approach, a parametric study is conducted to investigate the effect of open and in-filled trenches in reducing the structural vibration caused by a train passing nearby, which is simulated as a harmonic line load. The key parameters that dominate the performance of wave barriers in reducing the structural vibrations are identified. The results presented herein serve as a useful guideline for the design of open and in-filled trenches concerning wave reduction.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2004년도 봄 학술발표회 논문집
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• pp.235-242
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• 2004

In this study numerical and experimental studies are conducted to examine the wave screening effectiveness of trenches. The numerical study is based on a finite element model of a "sandbox" with Lysmer-Kuhlemeyer-type absorbing boundaries. Using the model, the screening effectiveness of trench is studied for different trench dimensions and distance from source and receiver to trench. The results of the numerical modeling are compared with the results of the ultrasonic experiment which is performed on a acrylic block with a drilled rectangular cut. These results show that the screening effectiveness of the trench is nearly equal if the depth of trench is lager than 60 % of the surface wave length. If is also shown that if the distance between the trench and the source is lager than twice the surface wave length, the thickness of the trench does not affect the screening effectiveness.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.629-632
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• 1998

This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.