• 제목/요약/키워드: trenches

검색결과 110건 처리시간 0.035초

Reduction of Railway-induced Vibration using In-filled Trenches with Pipes

  • Hasheminezhad, Araz
    • International Journal of Railway
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    • 제7권1호
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    • pp.16-23
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    • 2014
  • Reduction in railway-induced vibrations in urban areas is a very challenging task in railway transportation. Many mitigation measures can be considered and applied. Among these, a little attention has been paid to trenches. In this study, a numerical investigation on the effectiveness of in-filled trenches with pipes in reducing railway vibrations due to passing trains is presented. Particularly, a series of two-dimensional dynamic analysis was performed to model the behavior of ballasted railway track under harmonic load with ABAQUS software as a Finite Element method. In so doing, two types of in-filled trenches with pipes with steel and concrete materials have been investigated in this paper. In addition, effectiveness of pipes made of steel and concrete, filled with loose sand and clay in railway-induced vibration reduction has been assessed. The results point out that using in-filled trench with pipes does not effective a lot on railway-induced vibration reduction in comparison to other railway-induced vibration reduction methods. However, in-filled trenches with steel pipes are much more effective than in-filled trenches with concrete pipes. Moreover, filling pipes with loose sand and clay does not have any effect on vibration reduction efficiency of these in-filled trenches.

서브마이크론 빔 레조네이터 제작을 위한 바닥전극 형성방법 (Fabrication of embedded bottom electrodes for submicron beam resonators)

  • 이용석;장윤호;방용승;김정무;김종만;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.131-132
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    • 2008
  • We describe a fabrication method of submicron glass trenches which have embedded metal lines for the future application of nano-scale RF MEMS devices. The glass wafer was etched using two different conditions to identify the relationship between the slope of glass trenches and the slope of photroresist. A self-aligned metal photomask and negative photroresist (PR) slope were used to insert metal lines inside the glass trenches. The PR slope patterned by backside photolithography was affected by the profile of preformed glass trenches. Gold was well fabricated in the $0.7{\mu}m$ wide trench thanks to the negative PR slope. Nano-scale glass trenches with embedded metal lines can be used as a bottom electrode in submicron beam resonators operating with a high resonant frequency.

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좌우 트렌치를 구비한 분리 주기 테이퍼 도파로 모드 크기 변환기의 설계 및 성능 분석 (Design and analysis of a mode size converter composed of periodically segmented taper waveguide surrounded by trenches)

  • 박보근;정영철
    • 대한전자공학회논문지SD
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    • 제41권12호
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    • pp.43-49
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    • 2004
  • 본 논문에서는 슈퍼하이델타(Super High Delta) 실리카 광도파로와 단일 모드 광섬유 사이의 결합손실을 줄이기 위한 모드 크기 변환기를 설계하였다. 새로운 모드 크기 변환기는 물리적 크기를 최소화하기 위해 주기적으로 분리된 테이퍼 도파로를 사용하였으며 공정을 간단히 하기 위해 수평형 테이퍼를 사용하였다. 또한 결합손실을 개선하기 위해 모드 크기 변환기 주변에 트렌치 구조를 삽입하였다. 최적의 모드 크기 변환기 설계에서 결합손실은 트렌치 구조가 삽입되지 않은 경우는 0.33dB/point 이며 트렌치가 삽입된 경우는 0.2dB/point이다.

Hollow Structure에서의 희생층 평탄화 제작 공정 (The Fabrication Processes for the Planarization of Sacrificial Layers over Hollow Structures)

  • 윤용섭;배기덕;최형;전찬봉;노광춘
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권10호
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    • pp.546-550
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    • 2004
  • Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.

표면 평탄도가 소프트리소법에 의한 미세 패턴 형성에 미치는 영향 (Effect of Surface Roughness on the Formation of Micro-Patterns by Soft Lithography)

  • 김경호;최균;한윤수
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.871-876
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    • 2014
  • Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

SOI와 트랜치 구조를 이용한 초저소비전력형 미세발열체의 제작과 그 특성 (The Fabrication of Micro-heaters with Low Consumption Power Using SOI and Trench Structures and Its Characteristics)

  • 정귀상;홍석우;이원재;송재성
    • 한국전기전자재료학회논문지
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    • 제14권3호
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    • pp.228-233
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    • 2001
  • This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro elelctro mechanical system) applications usign SOI (Si-on-insulator) and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10㎛ thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD (resistance thermometer device) on the same substrate by suing MgO as medium layer. The thermal characteristics of the micro-heater wit the SOI membrane is 280$\^{C}$ at input power 0.9W; for the SOI membrane with 10 trenches, it is 580$\^{C}$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.

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진동차단 구조물에 의한 표면파의 진동차단효과에 관한 연구 (A Study of Isolation-Effect of Surface Wave Using Open or In-filled Trenches)

  • 김문겸
    • 한국지진공학회:학술대회논문집
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    • 한국지진공학회 1999년도 춘계 학술발표회 논문집 Proceedings of EESK Conference-Spring
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    • pp.100-108
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    • 1999
  • rectangular open or in-filled trenches(concrete and rubber) are often used to reduce the ground vibrations caused by propagating surface(Rayleigh) waves. This paper presents the experimental data for estimating the vibration screening effectiveness of open or in-filled trenches Field dynamic tests using the exciter which can generate the 100kN vertical cyclic load in the range of 100-250 Hz were performed. One hundred and twenty accelerometers to measure the ground response are used in 6 radial direction. To compare the effectiveness of the vibration isolation the contours of the amplitude ratio with the dimensionless parameters dividing by Rayleight wave lengths were presented.

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SOI와 드랜치 구조를 이용한 초저소비전력형 미세발열체의 제작 (The fabrication of ultra-low consumption power type micro-heaters using SOI and trenche structures)

  • 정귀상;이종춘;김길중
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.569-572
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    • 2000
  • This paper presents the optimized fabrication and thermal characteristics of micro-heaters for thermal MEMS applications using a SDB SOI substrate. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10$\mu\textrm{m}$ thick silicon membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD(Resistance Thermometer Device)on the same substrate by using MgO as medium layer. The thermal characteristics of the micro-heater with the SOI membrane is 280$^{\circ}C$ at input Power 0.9 W; for the SOI membrane with 10 trenches, it is 580$^{\circ}C$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro thermal sensors and actuators.

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The effect of plamsa treatment on superconformal copper gap-fill

  • 문학기;김선일;박영록;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.249-249
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    • 2010
  • The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

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전해전착시 상감 구리 배선의 충전에 미치는 레벨러의 효과 (Effects of Leveler on the Trench Filling during Damascene Copper Plating)

  • 이유용;박영준;이재봉;조병원
    • 전기화학회지
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    • 제5권3호
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    • pp.153-158
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    • 2002
  • 전해전착법을 이용한 상감(damascene)구리 배선 충전시 레벨러 효과에 대해 연구하였다. 레벨러를 첨가한 도금액과 첨가하지 않은 도금액을 제조하여 선 폭이 $0.37{\mu}m,\;0.18{\mu}m$인 선형 트렌치를 충전한 후 field emission scanning electron microscope(FE-SEM)로 트렌치 단면을 관찰하였다. 레벨러로 Janus Green B를 사용하였으며, 억제제로서 polyethylene glycol(PEG), 촉진제로서 3-mercapto-1-propansulfonic acid를 사용하였다 레벨러를 첨가하지 않은 경우 $0.37{\mu}m$(종횡비 2.7:1) 트렌치를 공극 없이 충전할 수 있었으나 $0.18{\mu}m$(종횡비 5.25:1) 트렌치에서는 공극(void)이 형성되었다. 레벨러를 첨가한 경우에는 $0.18{\mu}m$ 트렌치를 공극 없이 충전할 수 있었다. 레벨러를 첨가하지 않은 경우 트렌치 모서리에서의 전착속도를 충분하게 억제하지 못하고 거칠게 전착되어 미세한 트렌치 충전시 공극을 형성한 반면, 레벨러를 첨가한 경우는 트렌치 상부모서리에서의 전착속도를 억제하고 균일한 전착을 유도하여 미세한 트렌치를 공극 없이 채울 수 있었다.