The fabrication of ultra-low consumption power type micro-heaters using SOI and trenche structures

SOI와 드랜치 구조를 이용한 초저소비전력형 미세발열체의 제작

This paper presents the optimized fabrication and thermal characteristics of micro-heaters for thermal MEMS applications using a SDB SOI substrate. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10$\mu\textrm{m}$ thick silicon membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD(Resistance Thermometer Device)on the same substrate by using MgO as medium layer. The thermal characteristics of the micro-heater with the SOI membrane is 280$^{\circ}C$ at input Power 0.9 W; for the SOI membrane with 10 trenches, it is 580$^{\circ}C$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro thermal sensors and actuators.