• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.531-532
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• 2005

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.103-106
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• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• ETRI Journal
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• v.27 no.3
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.664-674
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• 2016

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1061-1064
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• 2009

Through dark injection space-charge-limited current (DI-SCLC) and trap-free SCLC measurements, it has been demonstrated that an indium tin oxide (ITO)/buckminsterfullerene ($C_{60}$) electrode can form a quasi-Ohmic contact with N, N'-bis (naphthalen-1-yl)-N, N'-bis(phenyl) benzidine (NPB). The DI-SCLC results show a clear peak current along with a shift of the peak position as the field intensity varies, implying an Ohmic (or quasi-Ohmic) contact. A theoretical simulation of the SCLC also shows that ITO/$C_{60}$ forms an Ohmic contact with NPB. The Ohmic contact makes it possible to estimate the NPB hole mobility through the use of both DI-SCLC and trap-free SCLC analysis. This also contributes to a reduction in power consumption.

• Bulletin of the Korean Chemical Society
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• v.6 no.4
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• pp.218-221
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• 1985

Transient charging and discharging currents as well as space charge limited currents have been measured in biaxially stretched poly(vinylidene fluoride) film under various poling fields and temperatures. At low temperatures and short poling times, the I-V characteristics showed shallow trap behavior. When the current values extrapolated to the infinite time, the I-V characteristics indicate that the distribution of the trap energy levels is uniform or very broad. The abnormal suppression of current at higher poling voltages and the high discharge rate observed also in the same voltage range are attributed to the morphological changes due to dipole reorientation.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.24-28
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• 2004

We have used ITO/Alq$_3$/Al structure to study electrical conduction mechanism in organic light-emitting diodes. Current-voltage-luminance characteristics were measured at room temperature by varying the thickness of Alq$_3$ layer from 60 to 400mm. We were able to confirm that there are three different mechanisms depending on the applied voltage region; ohmic, space-charge-limited current, and trap-charge-limit-current mechanism. And the maximum luminous efficiency was obtained when the thickness of Alq$_3$ layer is 200nm.