• Journal of Ecology and Environment
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• v.29 no.2
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• pp.85-103
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• 2006

An investigation of fauna and community of insects in Gotjawal Terrain, Jeju-do, had been conducted with a way of black light trap from July to September, 2005. The investigated insects were classified into 217 species, 75 families, and 11 orders respectively. Coleoptera that occupied 55.3 percent among them and was consisted of 120 species was the richest group and Hemiptera followed it. The density of Physopelta gutta was highest but Physopelta cincticollis was overall the dominant species in all sampling areas. The species diversity index was highest at Jocheon-Hamdeog Gotjawal in Jeju-do, while it was lowest in Gujwa-Sungsan Gotjawal. Clustering analysis revealed that the insect communities of four localities were grouped in only one cluster. Included in the species unreported in Jeju Island were Menida musiva and Pentatoma japonica in Hemiptera, Philonthus wuesthoffi in Coleoptera, and Phanerotoma flava in Hymenoptera.

• Journal of Fisheries and Marine Sciences Education
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• v.15 no.2
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• pp.135-144
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• 2003

1. The appearance of fisheries animals and plants of investigation areas were fishes, 20 species; algae, 9 species; molluska, 6 species; arthropod, 12 species; echinoderm, 5 species by confirmed appearance species. 2. The C.P.U.E by trap(1pcs of trap) were 3.95 species and weight of 2,098g, mainly catching species are greenling and jacopever(94.16%). The C.P.U.E by long liner(long liner 1coil, 100pcs) were 11.7species and weight of 6,418g, It occupied jacopever(35.63%) greenling(20.78%), bastard halibut(20.31%). The C.P.U.E of appearance species gill net(ipcs of gill net) were 5.05species and weight of 3,050g, It occupied jacopever(39.63%) greenling(29.83%), bastard halibut(17.47%). 3. The results of comparative analysis and natural species and stocked species, in case of bastard halibut, jacopever species were occupied species(83.33~92%), weight(86.86~96%). The stocked species were occupied species of 8.00~16.67%, weight of 4.00~13.14%. Provided the stocked projets were enacted effectively in future. The density of dwelling of stocked species were increase. Also, it will be contribute to the increase of fishermens income.

• Journal of the Korean Applied Science and Technology
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• v.30 no.2
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• pp.290-296
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• 2013

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• International Journal of Industrial Entomology and Biomaterials
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• v.47 no.1
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• pp.25-33
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• 2023

Solitary bees, such as Osmia cornifrons, O. pedicornis, O. satoi, and O. taurus (Hymenoptera: Megachilidae), have the potential for cost-effective and sustainable pollination, necessitating a comprehensive understanding of their ecological traits to implement effective fertilization strategies for various crops. This study investigated the nesting rate of Osmia spp. in different regions and altitudes, using various trap types, and found that the highest nesting rate occurred at altitudes of 300-399 m a.s.l. and showing a preference for bamboo-type traps, with the Andong region having the highest nesting rate overall, indicating the influence of altitude, habitat area, and trap type on the density of Osmia spp. nests. The distribution and diversity of the four Osmia spp. in different regions and altitudes revealed variations in their occurrence, with O. pedicornis having the broadest distribution rate, particularly at altitudes above 300 m a.s.l.. The present study found significant differences between species in the cocoon masses of O. cornifrons, O. pedicornis, and O. taurus, with region and altitude influencing the masses of each species too.

• Journal of the Korean Society of Food Science and Nutrition
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• v.33 no.7
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• pp.1147-1153
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• 2004

The effect of commercial deer antler drink (provided by Chung-yang Deer Farm) on blood glucose level, plasma lipids and antioxidants state in type 2 diabetic patients were studied. Ten patients with type 2 diabetes participated in the study and consumed 2 pouches (200 mL) of deer antler drink every day for 3 weeks. No significant differences were observed in levels of triglycerides, total cholesterol, low density lipoprotein cholesterol (LDL-C) and high density lipoprotein cholesterol (HDL-C). However, oxidized LDL measured as conjugated dienes decreased in the patients after the trial. Plasma tocopherols and carotenoids levels showed no significant changes. No significant differences were observed in erythrocyte SOD, catalase and GSH-Px in the each group. No significant differences were observed in plasma TRAP. The results would suggest that deer antler drink influences conjugated dienes but long-term intervention trial may be necessary to see further beneficial effect of deer antler drink in diabetic patients.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.18-23
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• 2009

The effect of hydrogen-nitrogen annealing on the interface trap properties of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) capacitors is investigated by analyzing the capacitors' gate leakage current and the interface trap density between the Si and $SiO_2$ layer. MONOS samples annealed at $850^{\circ}C$ for 30 s by rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing eases $N_2$ and 2% hydrogen and 98% nitrogen gas mixture $(N_2-H_2)$ at $450^{\circ}C$ for 30 mins. Among the three samples as-deposited, annealed in $N_2$ and $N_2-H_2$, MONOS sample annealed in an $N_2-H_2$ environment is found to have the lowest increase of interface-trap density from the capacitance-voltage experiments. The leakage current of sample annealed in $N_2-H_2$ is also lower than that of sample annealed in $N_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.