Browse > Article
http://dx.doi.org/10.12925/jkocs.2013.30.2.290

Comparative Study on Interfacial Traps in Organic Thin-Film Transistors According to Deposition Methods of Organic Semiconductors  

Park, Jae-Hoon (Department of Electronic Engineering, Hallym University)
Bae, Jin-Hyuk (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of the Korean Applied Science and Technology / v.30, no.2, 2013 , pp. 290-296 More about this Journal
Abstract
We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.
Keywords
transistor; organic semiconductor; interface trap; vacuum deposition; solution process;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 D. Voss, "Cheap and Cheerful Circuits", Nature 407, 442 (2000).   DOI
2 G. H. Gelinck, H. E. Huitema, E. V. Veenendall, E. Cantatore, L. Schrijnemakers, J. B. P. H. V. D. Putten, T. C. T. Genus, M. Beenhakkers, J. B. Giesbers, B.-H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. V. Rens, D. M. De. Leeuw, "Flexible Active-Matrix Displays and Shift Registers Based on Solution-Processed Organic Transistors", Nat. Mater. 3, 106 (2004).   DOI
3 Z.-T. Zhu, J. T. Mason, R. Dieckmann, G. G. Malliaras, "Humidity Sensors Based on Pentacene Thin-Film Transistors", Appl. Phys. Lett. 81, 4643 (2002).   DOI
4 T. Sekitani, H. Nakajima, H. Maeda, T. Fukushima, T. Aida, K. Hata, T. Someya, "Stretchable Active-Matrix Organic Light-Emitting Diode Display Using Printable Elastic Conductors", Nat. Mater. 8, 494 (2009).   DOI
5 H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, E. P. Woo, "High-Resolution Inkjet Printing of All-Polymer Transistor Circuits", Science 290, 2123 (2000).   DOI
6 H. B. Akkerman, H. Li, Z. Bao, "TIPS-Pentacene Crystalline Thin Film Growth", Org. Electron. 13, 2056 (2012).   DOI
7 H. Sirringhaus, R. J. Wilson, R. H. Friend, "Mobility Enhancement in Conjugated Polymer Field-Effect Transistors Through Chain Alignment in a Liquid-Crystalline Phase", Appl. Phys. Lett. 77, 406 (2000).   DOI
8 W.-Y. Chou, H.-L. Cheng, "High Mobility Pentacene Thin-Film Transistors on Photopolymer Modified Dielectrics", Adv. Funct. Mater. 14, 811 (2004).   DOI
9 C.-M. Keum, J.-H. Bae, W.-H. Kim, M.-H. Kim, J. Park, S.-D. Lee, "Effect of Thermo-Gradient-Assisted Solvent Evaporation on the Enhancement of the Electrical Properties of 6,13-Bis(triisopropylsilyethynyl)-Pentacene Thin-Film Transistors", J. Korean Phys. Soc. 58, 1479 (2011).   DOI
10 J.-H. Bae, J. Kim, W.-H. Kim, S.-D. Lee, "Importance of the Functional Group Density of a Polymeric Gate Insulator for Organic Thin-Film Transistors", Jpn. J. Appl. Phys. 46, 385 (2007).   DOI
11 M-H. Kim, S.-P. Noh, C.-M. Keum, J.-H. Bae, S.-D. Lee, "Bias Voltage Effect on Electrical Properties of N-Type Polymeric Field Effect Transistors with Dual Gate Electrodes", Org. Electron. 13, 2365 (2012).   DOI
12 S. C. Lim, S. H. Kim, J. B. Koo, J. H. Lee, C. H. Ku, Y. S. Yang, Y. Zyung, "Hysteresis of Pentacene Thin-Film Transistors and Inverters with Cross-Linked Poly(4-vinylphenol) Gate Dielectrics", Appl. Phys. Lett. 90, 173512 (2007).   DOI
13 A.-L. Deman, M. Erouel, D. Lallemand, M. Phaner-Goutorbe, P. Lang, J. Tardy, "Growth Related Properties of Pentacene Thin Film Transistors with Different Gate Dielectrics", J. Non-Cryst. Solids 354, 1598 (2008).   DOI
14 J.-H. Bae, W.-H. Kim, C.-J. Yu, and S.-D. Lee, "Reduction in Contact Resistance of Pentacene Thin-Film Transistors by Formation of an Organo-Metal Hybrid Interlayer", Jpn. J. Appl. Phys. 48, 020209 (2009).   DOI
15 J. Park, J.-H. Bae, W.-H. Kim, S.-D. Lee, J. S. Gwag, D. W. Kim, J. C. Noh, J. S. Choi, "The Surface Energy-Dictated Initial Growth of a Pentacene Film on a Polymeric Adhesion Layer for Field-Effect Transistors", Solid-State Electron. 54, 1650 (2010).   DOI
16 S. Y. Cho, J. M. Ko, J. Y. Jung, J. Y. Lee, D. H. Choi, C. Lee, "Ink-Jet Printed Organic Thin Film Transistors Based on TIPS Pentacene with Insulating Polymers", J. Mater. Chem. C 1, 914 (2013).   DOI
17 M. W. Lee, G. S. Ryu, Y. U. Lee, C. Pearson, M. C. Petty, C. K. Song, "Control of Droplet Morphology for Ink-Jet-Printed TIPS-Pentacene Transistors", Microelectron. Eng. 95, 1 (2012).   DOI
18 J. Park, Y.-S. Jeong, K.-S. Park, L.-M. Do, J.-H. Bae, J. S. Choi, C. Pearson, M. Petty, "Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries", J. Appl. Phys. 111, 104512 (2012).   DOI
19 A. Rolland, J. Richard, J. P. Kleider, D. Mencaraglia, "Electrical Properties of Amorphous Silicon Transistors and MIS-Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations", J. Electrochem. Soc. 140, 3679 (1993).   DOI
20 C. D. Dimitrakopoulos, D. J. Mascaro, "Organic Thin-Film Transistors: A Review of Recent Advances", IBM J. Res. Dev. 45, 11 (2001).   DOI
21 J. B. Choi, D. C. Yun, Y. I. Park, J. H. Kim, "Properties of Hydrogenated Amorphous Silicon Thin Film Transistors Fabricated at 150${^{\circ}C}$", J. Non-Cryst. Solids 266, 1315 (2000).