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Interface Traps Analysis as Bonding of The Silicon/Nitrogen/Hydrogen in MONOS Capacitors  

Kim, Hee-Dong (School of Electrical Engineering, Korea University)
An, Ho-Myoung (School of Electrical Engineering, Korea University)
Seo, Yu-Jeong (School of Electrical Engineering, Korea University)
Zhang, Yong-Jie (School of Electrical Engineering, Korea University)
Nam, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University)
Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.12, 2009 , pp. 18-23 More about this Journal
Abstract
The effect of hydrogen-nitrogen annealing on the interface trap properties of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) capacitors is investigated by analyzing the capacitors' gate leakage current and the interface trap density between the Si and $SiO_2$ layer. MONOS samples annealed at $850^{\circ}C$ for 30 s by rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing eases $N_2$ and 2% hydrogen and 98% nitrogen gas mixture $(N_2-H_2)$ at $450^{\circ}C$ for 30 mins. Among the three samples as-deposited, annealed in $N_2$ and $N_2-H_2$, MONOS sample annealed in an $N_2-H_2$ environment is found to have the lowest increase of interface-trap density from the capacitance-voltage experiments. The leakage current of sample annealed in $N_2-H_2$ is also lower than that of sample annealed in $N_2$.
Keywords
MONOS; hydrogen-nitrogen annealing; radical-blocking oxide; NBTI/PBTI;
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