• Title/Summary/Keyword: transparent oxide

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Semiconductor Engineering (산화물반도체 트랜지스터의 전기적인 특성)

  • Oh, Teresa
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.390-392
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    • 2013
  • The research was observed the characteristic of ZnO based oxide semiconductors for the transparent conducting display. The optical-physical properties of ZnO based oxide semiconductors) grown on p-Si wafer were presented. ZnO based oxide semiconductors was prepared by the RF magnetron sputtering system. The characteristic of ZnO based oxide semiconductorswas strongly influenced by the amount of localized electron state by the defects. The PL spectra moved to long wave number with increasing the defects in the film. The mobility of a-IGZO film was increased with increasing the oxygen gas flow rate. The resistivity of ZnO based oxide semiconductors was also related to the mobility of ZnO based oxide semiconductors, and the mobility increased at the sample with low resistivity. The electric characteristic of a-IGZO TFTs showed that it is an n-type semiconductor.

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Vacuum thermal evaporated transparent cathodes for organic light-emitting devices (OLED를 위한 진공 열 증착 투명 음극 형성 기술)

  • Moon, Dae-Gyu
    • Vacuum Magazine
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    • v.1 no.2
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    • pp.19-23
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    • 2014
  • Transparent and top emission organic light-emitting device (OLEDs) are the important issues in realizing new display applications such as see-through electronic displays, and flexible displays. The cathode of the transparent and top emission OLEDs should be transparent in the visible light and should not give any damage to the underlying organic layers, in addition to its intrinsic role of injecting electrons into the organic layers. Several authors have investigated the transparent conducting oxide films prepared by sputtering methods. They have introduced the sophisticated sputtering process for reducing the damages. Other groups have developed thermally evaporated transparent cathodes which are believed to be damage free without causing any permanent defect to the organic layers. This review focuses on the vacuum evaporated damage free transparent cathodes.

Highly Conductive Flexible Transparent Electrode Using Silver Nanowires & Conducting Polymer

  • Seo, Dong-Min;Kim, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.547-547
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    • 2012
  • As displays become larger and solar cells become cheaper, there is an increasing need for low-cost transparent electrodes. Intensive effort has been made to replace ITO (Indium Tin Oxide) based transparent electrode with cheap and flexible ones. Among those, silver nanowires have got limelight because of its great conductivity and flexibility. Even though the electric property of the Ag nanowire based transparent electrode surpassed ITO, the optical property needs to be improved (lower transmittance, higher haze). Here, we reported transparent electrode based on Ag nanowires and conducting polymer to improve optical properties. The Ag nanowires are coated onto PET films and the resulting transparent electrode film shows $200ohm/{\Box}$ resistance and > 90% optical transmittance.

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Fabrication of Stretchable Transparent Electrodes

  • Oh, Jong Sik;Yeom, Geun Young
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.149-156
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    • 2017
  • Recently, stretchable and transparent electrodes have received great attention owing to their potential for realizing wearable electronics. Unlike the traditional transparent electrodes represented by indium tin oxide (ITO), stretchable and transparent electrodes are able to maintain their electrical and mechanical properties even under stretching stress. Lots of research efforts have been dedicated to the development of stretchable and transparent electrodes since they represent the most important engineering platform for the production of wearable electronics. Various approaches using silver nanowires, nanostructured networks, conductive polymers, and carbon-based electrodes have been explored by many world leading research groups. In this review, present and recent advances in the fabrication methods of stretchable and transparent electrodes are discussed.

Ultra-thin aluminum thin films deposited by DC magnetron sputtering for the applications in flexible transparent electrodes (DC 마그네트론 스퍼터링법으로 증착된 초박형 Al 박막의 투명전극 적용성 연구)

  • Kim, Daekyun;Choi, Dooho
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.2
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    • pp.19-23
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    • 2018
  • In this study, the feasibility of Al-based transparent electrodes for optoelectronic devices was investigated. Al thin films having thickness in the range of 3-12 nm were deposited on glass substrates, and sheet resistance was measured for films thicker than 7 nm and the values continue to decrease with increasing film thickness. The grain size in the films was found to increase with increasing grain size. 85% visible light transmittance was measured at the thickness of 3 nm, and decreased to 50% and 60% when the film thickness reaches 4 nm and 5 nm, respectively. The results of this study can be used in the applications of oxide/metal/oxide type transparent electrodes.

Properties of Nb-doped TiO2 Transparent Conducting Oxide Film Fabricated by RF Magnetron Sputtering (RF 마그네트론 스퍼터링에 의해 합성된 Nb-doped TiO2 투명전극의 특성)

  • Kim, Min-Young;Cho, Mun-Seong;Lim, Dong-Gun;Park, Jae-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.3
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    • pp.204-208
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    • 2012
  • $TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • Journal of Applied Reliability
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    • v.16 no.1
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application (투명 전도성 산화물 전극으로의 응용을 위한 산화아연(ZnO) 코팅막의 습식 식각 특성연구)

  • Yoo, Dong-Geun;Kim, Myoung-Hwa;Jeong, Seong-Hun;Boo, Jin-Hyo
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.73-79
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    • 2008
  • In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

The Deposition and Properties of Surface Textured ZnO:Al Films (표면 텍스쳐된 ZnO:Al 투명전도막 증착 및 특성)

  • 유진수;이정철;김석기;윤경훈;박이준;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.9
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    • pp.378-382
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    • 2003
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

The fabrication and properties of surface textured ZnO:Al films (Surface Textured ZnO:Al 투명전도막 제작 및 특성)

  • 유진수;이정철;강기환;김석기;윤경훈;송진수;박이준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.391-394
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    • 2002
  • Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

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