• 한국결정성장학회지
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• 제7권4호
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• pp.573-577
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• 1997

표면상변이 현상은 표면 흡착입자들 사이에 강력한 인력포텐셜이 존재할 경우 일어나는 것으로 알려져 있다. 본 논문에서는 표면상변이 현상의 강인력 의존성을 간단한 점유통계를 이용하여 고찰하였다. 압력이 임계점에 도달하였을 때 표면 결정화가 급속히 진행되는 상변이 효과가 나타났으며, 온도가 증가함에 따라서 상변이가 일어나는 임계압력은 증가하였다. 이러한 결과는 표면상변이 현상에 대한 정성적 고찰로 사료된다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.139-156
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• 1996

The phase field model is becoming the model of choice for the theoretical study of the morphologies of crystals growth from the melt. This model provides an alternative approach to the solution of the classical (sharp interface) model of solidification by introducing a new variable, the phase field, Ø, to identify the phase. The variable Ø takes on constant values in the bulk phases and makes a continuous transition between these values over a thin transition layer that plays the role of the classically sharp interface. This results in Ø being governed by a new partial differential equation(in addition to the PDE's that govern the classical fields, such as temperature and composition) that guarantees (in the asymptotic limit of a suitably thin transition layer) that the appropriate boundary conditions at the crystal-melt interface are satisfied. Thus, one can proceed to solve coupled PDE's without the necessity of explicitly tracking the interface (free boundary) that would be necessary to solve the classical (sharp interface) model. Recent advances in supercomputing and algorithms now enable generation of interesting and valuable results that display most of the fundamental solidification phenomena and processes that are observed experimentally. These include morphological instability, solute trapping, cellular growth, dendritic growth (with anisotropic sidebranching, tip splitting, and coupling to periodic forcing), coarsening, recalescence, eutectic growth, faceting, and texture development. This talk will focus on the fundamental basis of the phase field model in terms of irreversible thermodynamics as well as it computational limitations and prognosis for future improvement. This work is supported by the National Science Foundation under grant DMR 9211276

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.573-573
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• 2012

High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

• 한국세라믹학회지
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• 제33권3호
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• pp.362-370
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• 1996

Kalsilite (KAlSiO4) system undergoes a displacive phase transition from hexagonal phase with p63 space group to the phase with P63mc at 886$^{\circ}C$. The flux composition having kalsilite :K2O:B2O3=1:2:2 has enabled the growth of hexagonal kalsilite with the size of 0.5~1 mm at a slow cooling rate (0.3$^{\circ}C$/hr). On decreasing the cooling rate the size has increased and pyramidal (1011) faces are newly developed with the shape of (0001) and (1010) faces. Upon stirring (1011) faces are degraded. The space group of O1 and O2 are P21221 and C2221 respectively. Their orthorombic modification O1 and O2 are synthesized at relatively low and high temperature respectively.

• Fibers and Polymers
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• 제2권2호
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• pp.98-107
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• 2001

The phase transition behavior isothermal micro-phase separation kinetics of polyester-based thermoplastic elastomer were studied using the synchrotron X-ray scattering(SAXS) method. The structural changes occurring during heating period were investigated by determining the changes of the one-dimensional correlation function, interfacial thickness and Porod constant. Based on the abrupt increases of the domain spacing and interfacial thickness, a major structural change occurring well below the melting transition temperature is suggested. Those changes are explained in terms of melting of the thermodynamically unstable hard domains or/and the interdiffusion of the hard and soft segments in the interfacial regions. SAXS profile changes during the micro-phase separation process were also clearly observed at various temperatures and the separation rate was found to be sensitively affected by the temperature. The peak position of maximum scattering intensity stayed constant during the entire course of the phase separation process. The scattering data during the isothermal phase separation process was interpreted with the Cahn-Hilliard diffusion equation. The experimental data obtained during the early stage of the phase separation seems to satisfy the Cahn-Hilliard spinodal mechanism. The transition temperature obtained from the extrapolation of the diffusion coefficient to zero value turned out to be about 147$\pm$$2^{\circ}$, which is close to the order-disorder transition temperature obtained from the Porod analysis. The transition temperature was also estimated from the inveriant growth rate. By extrapolating the inveriant growth rate to zero, a transition temperature of about 145$\pm$$\pm$$2^{\circ}$ was obtained.

• 한국결정성장학회지
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• 제14권2호
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• pp.63-67
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• 2004

층상 구조의 cobalt dedecanesulfate 화합물을 합성하였다. 여러 온도 영역에서 상 전이가 일어나면서 층간 거리의 큰 변화가 생겼다. 상온에서 단일 층 구조의 cobalt dodecanesulfate 화합물이 고온에서 탈수된 화합물의 이중층의 구조로 변화되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 한국세라믹학회지
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• 제52권5호
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• pp.361-365
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• 2015

Vanadium dioxide ($VO_2$) of monoclinic phase exhibits Metal Insulator Phase Transition (MIPT) phenomenon involving a sharp change in electrical and optical properties at $68^{\circ}C$. Solution-based process is applied to form uniform $VO_2$ coating layer on ceramic tiles. This can selectively block the near-infrared light to possibly reduce the energy loss and prevent dew condensation caused by the temperature difference. Heat treatment conditions including temperature and dwell time were examined to obtain a monoclinic $VO_2$ single phase. Both rutile and monoclinic $VO_2$ phases were observed from in the tiles post-annealed below $700^{\circ}C$. Desired monoclinic $VO_2$ single phase was grown in the tiles heat treated at $750^{\circ}C$. Nano facets of irregular size were observed in the monoclinic $VO_2$ phase involving the phase-transition. Grain growth of monoclinic $VO_2$ phase was observed as a function of dwell time at $750^{\circ}C$.

• 한국결정성장학회지
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• 제9권5호
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• pp.463-469
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• 1999

$K_3$$Li_2$$Nb_5$$O_{15}$KLN) 단결정을 $K_x$$Li_{1-x}$$NbO_3$의 조성에서 x= 0.04~0.6으로 결정성장방법으로 성장시켰다. 균열이 없는 양질의 결정성장을 위해 c축 및 a축 방향을 택하였고, 단결정 성장을 위한 최적의 조건에 대하여 연구하였다. 성장된 결정은 편광현미경 관찰을 통해 일축성 무늬를 볼수 있었고, X-선 회절실험에서 결정된 격자상수는 a=b=12.500 $\AA$, c=3.996$\AA$이었으며, 1HF : $2HNO_3$ 용액의 부식에서 c축 방향으로 정사각형 및 a축 방향으로 직사각형의 부식상을 볼수 있었다. 광투과율 측정과 온도에 따른 유전상수 측정등을 통해 KLN 결정의 광학적 특성 및 다른 조성을 갖는 시료에서 유전특성을 조사하였다. $420^{\circ}C$에서 상전이 온도를 갖는 결정은 확산상전이(diffuse phase transition) 특성을 갖는 반면 $493^{\circ}C$에서 상전이 온도를 보이는 결정은 날카로운(shap) 유전특성을 나타내었다.