• Journal of the Korea Computer Industry Society
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• v.2 no.10
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• pp.1253-1260
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• 2001

In this paper, a new voltage-controlled tunable analog active element for low-voltage applications and information protection is proposed. The proposed active element is composed of the CMOS complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the $0.25\mutextrm{m}$ CMOS n-well parameter HSPICE simulation. As a result, the gain and the unity gain frequency are 42㏈ and 200MHz respectively in the element on 2V supply voltage. And power dissipation of the designed circuit is 0.32mW.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.59-65
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• 1998

In this paper, a novel rail-to-rail input stage circuit with improved transconductance Is designed. Its excellent performances over whole common-mode input voltage Vcm range is demonstrated by circuit simulator HSPICE. The novel input stage circuit comprises additional 4 input transistors and 4 current sources/sinks. It maintains DC currents of signal amplifying transistors when one of the differential input stage circuits operates, but it reduces these currents to 1/4 when both differential input stage circuits operates, As a result, a operational amplifier with the novel circuit maintains nearly constant transconductance performance and unity-gain frequency in strong inversion region. The novel circuit allows an optimal frequency compensation and uniform operational amplifier performance over whole Vcm range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.1-6
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• 2012

This paper presents the extraction and analysis of small-signal parameters of tunneling field-effect transistors (TFETs) by using TCAD device simulation. The channel lengths ($L_G$) of the simulated devices varies from 50 nm to 100 nm. The parameter extraction for TFETs have been performed by quasi-static small-signal model of conventional MOSFETs. The small-signal parameters of TFETs with different channel lengths were extracted according to gate bias voltage. The $L_G$-dependency of the effective gate resistance, transconductance, source-drain conductance, and gate capacitance are different with those of conventional MOSFET. The $f_T$ of TFETs is inverely proportional not to $L_G{^2}$ but to $L_G$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.4
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• pp.685-695
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• 1997

In this paper, a new CMOS continuous-time fully-differential current-mode integrator is proposed as a basic building block of the low-voltage high frequency current-mode active filter. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined by a small-signal transconductance and a MOSFET gate capacitance can be expanded by the complementary transconductance of the proposed integrator. And also the magnitude of pole and zero are increased. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time fully-differential integrator with NMOS-gm. These results are verified by the small signal analysis and the SPICE simulation. As an application circuit of the proposed fully-differential current-mode integrator, the three-pole Chebyshev lowpass filter is designed using 0.8.$\mu$m CMOS processing parameters. SPICE simulation predicts a 3-dB bandwidth of 148MHz and power dissipation of 4.3mW/pole for the three-pole filter with 3-V power supply.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.319-324
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• 2003

In this paper, a new wideband tunable analog element for multimedia system is proposed. The proposed active element is composed of the complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the 0.22$\mu\textrm{m}$ CMOS n-well parameter simulation. As a result, the gam and the unity gam frequency are 42dB and 200MHz on 2V supply voltage. And power dissipation of the designed element is 0.32mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2100-2106
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• 2007

Multi-stage folding A/D converter circuit with $0.25{\mu}m$ N-well CMOS technology is designed. This A/D converter consists of a transconductance circuit, linear folder circuit and 1bit A/D converter circuit. In H-spice simulation results, linear folder circuits having high linearity can be obtained when the current mode is used instead of voltage mode. And in case of 6bit, the delay time is limited about 40ns. From this results, 6bit 25MSPS A/D converter circuit can be realized.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1987.10a
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• pp.231-235
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• 1987

• Information and Communications Magazine
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• v.4 no.4
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• pp.469-483
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• 1987