• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.35-42
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• 2015

Injection molding is a high efficient manufacturing technology for producing plastic parts. On the other hand, the warpage of molded plastic parts is an ubiquitous problem in the injection molding process. The main objective of this study was to minimize the amount of warpage occurring in the injection molding process of a hopper of ATDPS made of crystalline polymer (PP) instead of amorphous polymer (ABS). The moldflow CAE simulation was conducted for the molding process of the hopper to clarify the injection moldability, shear rate, shear stress, warpage by changing the gate shape and the number of ribs installed on the top of the hopper flange. The wide gate shape of runner system and multiple rib installation were found to be useful for minimizing the warpage of the hopper. The validity of the CAE simulations was supported by the injection molding experiment for the optimized design case.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.12 no.2
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• pp.22-29
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• 2013

The platform safety door is difficult to install in platform because the doors of railway vehicles and existing Passenger Safety doors should be alined. To be able to solve this problem, we propose the use of Rope Type Platform Safe Door (RPSD) which is a vertically retractable platform that is designed to close from top to bottom. This platform has installed safety gate pillars at intervals of 20-40 m which accommodates different types of train regardless of train length, gate opening and location. In this paper, we reviewed the application of existing PSD and RPSD in various train stops in Seoul Gyeongbu Line platform. The results of the review showed that the existing PSD may cause problem in construction, safety and cost efficiency. The use of RPSD however shows that minimal problems will be encountered.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.9-16
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• 1999

When the conventional IPD (inter-poly-dielctrics) layer with ONO(oxide-nitride-oxide) structure was used in the Flash EEPROM cell, its data retention characteristics were significanfly degraded because the top oxide of the ONO layer was etched off due to the cleaning process used in the gate oxidation process for the peripheral MOSFETs. When the IPD layer with the ONON(oxide-nitride-oxide-nitride) was used there, however, its data retention characteristics were much improved because the top nitride of the ONON layer protected the top oxide from being etched in the cleaning process. For the modelling of the data retention characteristics of the Flash EEPROM cell with the ONON IPD layer, the decrease of the threshold voltage cue to the charge loss during the bake was here given by the empirical relation ${\Delta}V_t\; = \;{\beta}t^me^{-ea/kT}$ and the values of the ${\beta}$=184.7, m=0.224, Ea=0.31 eV were obtained with the experimental measurements. The activation energy of 0.31eV implies that the decrease of the threshold voltage by the back was dur to the movement of the trapped electrons inside the inter-oxide nitride layer. On the other hand, the results of the computer simulation using the model were found to be well consistent with the results of the electrical measurements when the thermal budget of the bake was not high. However, the latter was larger then the former in the case of the high thermal budger, This seems to be due to the leakage current generated by the extraction of the electrons with the bake which were injected into the inter-oxide niride later and were trapped there during the programming, and played the role to prevent the leakage current. To prevent the generation of the leakage current, it is required that the inter-oxide nitride layer and the top oxide layer be made as thin and as thick as possible, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.391-396
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• 2013

In this paper, for HEVC decoding, an SAO hardware design with less processing time and reduced area is proposed. The proposed SAO hardware architecture introduces the design processing $8{\times}8$ CU to reduce the hardware area and uses internal registers to support $64{\times}64$ CU processing. Instead of previous top-down block partitioning, it uses bottom-up block partitioning to minimize the amount of calculation and processing time. As a result of synthesizing the proposed architecture with TSMC $0.18{\mu}m$ library, the gate area is 30.7k and the maximum frequency is 250MHz. The proposed SAO hardware architecture can process the decode of a macroblock in 64 cycles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.571-578
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• 2012

In this paper, we propose two main points. The first is the constraint for logic synthesis, and the second is an efficient logic synthesis method. Logic synthesis is a process to obtain the gate-level netlist from RTL (register transfer level) codes using logic mapping and optimization with the specified constraints. The result of logic synthesis is tightly dependent on constraint and logic synthesis method. Since the size and timing can be dramatically changed by these, we should precisely consider them. In this paper, we present the considering items in the process of logic synthesis by using our experience and experimental results. The proposed techniques was applied to a circuit with the hardware resource of about 650K gates. The synthesis time for the hybrid method was reduced by 47% comparing the bottom-up method and It has better timing property about slack than top-down method.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.6
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• pp.850-858
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• 2022

To deploy Gate Recurrent Units (GRU) on resource-constrained embedded devices, this paper presents a reconfigurable FPGA-based GRU accelerator that enables structured compression. Firstly, a dense GRU model is significantly reduced in size by hybrid quantization and structured top-k pruning. Secondly, the energy consumption on external memory access is greatly reduced by the proposed reuse computing pattern. Finally, the accelerator can handle a structured sparse model that benefits from the algorithm-hardware co-design workflows. Moreover, inference tasks can be flexibly performed using all functional dimensions, sequence length, and number of layers. Implemented on the Intel DE1-SoC FPGA, the proposed accelerator achieves 45.01 GOPs in a structured sparse GRU network without batching. Compared to the implementation of CPU and GPU, low-cost FPGA accelerator achieves 57 and 30x improvements in latency, 300 and 23.44x improvements in energy efficiency, respectively. Thus, the proposed accelerator is utilized as an early study of real-time embedded applications, demonstrating the potential for further development in the future.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.209-218
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• 2012

Recently, the Field Programmable Stateful Logic Array (FPSLA) was proposed as one of the most promising system integration technologies which will extend the life of the Moore's law. This work is the first proposal of the FPSLA design automation flow, and the approaches to logic synthesis, synchronization, physical mapping, and automatic placement of the FPSLA designs. The synchronization at each gate for pipelining determines the x-coordinates of cells, and reduces the placement to 1-dimensional problems. The objective function and its gradients for the non-linear optimization of the net length and placement density have been remodeled for the reduced global placement problem. Also, a recursive algorithm has been proposed to legalize the placement by relaxing the density overflow of bipartite bin groups in a top-down hierarchical fashion. The proposed model and algorithm are implemented, and validated by applying them to the ACM/SIGDA benchmark designs. The output state of a gate in an FPSLA needs to be duplicated so that each fanout gate can be connected to a dedicated copy. This property has been taken into account by merging the duplicated nets into a hyperedge, and then, splitting the hyperedge into edges as the optimization progresses. This yields additional 18.4% of the cell count reduction in the most dense logic stage. The practicality of the FPSLA can be further enhanced primarily by incorporating into the logic synthesis the constraint to avoid the concentrated fains of gates on some logic stages. In addition, an efficient algorithm needs to be devised for the routing problem which is based on a complicated graph. The graph models the nanowire crossbar which is trimmed to be embedded into the FPSLA fabric, and therefore, asymmetric. These CAD tools can be used to evaluate the fabric efficiency during the architecture enhancement as well as automate the design.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.