• 제목/요약/키워드: tin content

검색결과 120건 처리시간 0.021초

졸-겔 공정에 의해 제조된 ITO (Indium-Tin-Oxide) 박막의 표면처리 (Surface Treatment of ITO (Indium-Tin-Oxide) thin Films Prepared by Sol-Gel Process)

  • 정승용;윤영훈;연석주
    • 한국세라믹학회지
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    • 제44권6호
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    • pp.313-318
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    • 2007
  • ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

내부 확산법에 의한 $Nb_3$Sn초전도선에 Ge 첨가에 따른 임계전류 및 미세조직 변화 (Influence of Ge addition on phase formation and electromagnetic properties in internal tin processed $Nb_3$Sn wires)

  • 하동우;오상수;이남진;하홍수;권영길;류강식;백홍구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.496-499
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    • 2000
  • In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt% Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

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RF 마그네트론 스퍼터링에서 증착거리와 증착온도가 무기 액정 배향막의 물리적 성질에 미치는 영향에 대한 연구 (Influences of Target-to-Substrate Distance and Deposition Temperature on a-SiOx/Indium Doped Tin Oxide Substrate as a Liquid Crystal Alignment Layer)

  • 박정훈;손필국;김기범;박혁규
    • 한국재료학회지
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    • 제18권10호
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    • pp.521-528
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    • 2008
  • We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-$SiO_x$) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-$SiO_x$ decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between $150^{\circ}\;and\;200^{\circ}$. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-$SiO_x$ thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-$SiO_x$ showed homogeneous alignment; however, in the lower case (x < 1.6), liquid crystals showed homeotropic alignment.

간헐적 침지 방식의 생물반응기 시스템을 이용한 유칼리 선발목 클론 대량증식 (Use of the Temporary Immersion Bioreactor System for Mass Production of Eucalyptus pellita Plus Tree)

  • 김선자;박소영;문흥규;이위영
    • 한국산림과학회지
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    • 제99권1호
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    • pp.125-130
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    • 2010
  • 식물대량증식에서 생물반응기의 이용은 규모를 대량화하고 자동화 할수 있다는 점에서 생산비를 절감할 수 있는 방법 중 하나이다. 본 연구에서는 유칼리 펠리타 선발목의 대량증식 체계를 확립하기 위해 4가지의 생물반응기 배양시스템에서 유칼리의 생장을 비교하였다. 배양기내에 지지물(net)을 설치하고 매 4시간마다 30분씩 액체배지를 공급한 TIN 배양(Temporary immersion with net)에서 식물체 생장이 가장 좋았다. TIN 시스템하에서 자란 식물체는 동일한 방식에 net가 없는 TIX 배양(Temporary immersion without net)에서 자란 식물체와 비교하여 초장이 3배 이상 증가하였다. 게다가 TIN 시스템에서 생산 된 식물체는 총 엽록소 함량, 엽록소 a/b, 그리고 건물중 등도 증가하였다. 위와 같은 결과는 기내 유칼리나무 생장에 중요한 요인이 식물체가 적당한 간격으로, 그리고 적당한 시간동안 배지에 노출되어야하고, net의 이용이 필수적임을 보여준다. TIN 시스템은 유칼리 클론묘의 대량생산을 위해 최적의 시스템으로 산업화를 위한 유칼리나무 대량생산시 유용하게 이용될 수 있을 것으로 생각된다.

The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor

  • Lee, Sang Yeol;Choi, Jun Young
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.103-105
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    • 2015
  • Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

시판생약(市販生藥)의 미량금속(微量金屬) 함량(含量)에 관(關)한 연구(硏究) (Studies on the Contents of Trace Metals in Crude Drugs)

  • 박재주;양기숙
    • 생약학회지
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    • 제8권2호
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    • pp.61-68
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    • 1977
  • The content of micro inorganic compounds in the 145 kinds of crude drugs on market was determined with Model 207 Atomic Absorption Spectrophotometer and Model 306 Flameless A.A. Content of Fe, Cu, Ni, Mn, Cd, Cr, Sn, and Pb was examined and the results revealed that the crude drugs which are using as a hematics and emmenagogues contained high content of iron, and those which are using as a antiinflammatory and emmenagogues contained high content of copper. Aromatic stomachics contain manganese and zinc, and diuretics and antiinaflammatory agents do tin. High content of Ni was found in tonics, but chronium and cadmium were not detected in crude drugs. There were no differences of content of trace metals in the various site of plants used.

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열처리에 따른 SnO2 박막의 표면형상 (Influence of Thermal Treatment on Surface Morphology of Tin Dioxide Thin Films)

  • 박경희;류현욱;서용진;이우선;홍광준;박진성
    • 한국재료학회지
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    • 제13권7호
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    • pp.442-446
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    • 2003
  • Tin dioxide ($SnO _2$) thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition. A few hillocks like a cauliflower were observed and the number of hillock on thin film surface increased with annealing temperature in air atmosphere. The oxygen content and the binding energy during air annealing at$ 500^{\circ}C$ came to close the stoichiometric $SnO_2$. The cauliflower hillocks seem to be the result of the continuous migration of the tiny grains to release the stress of an expanded grain. Sensitivity of CO gas depended on annealing temperature and increased with increasing annealing temperature.

유리섬유 강화 청동기지 복합재에서 마모특성에 미치는 유리섬유와 흑연의 영향 (Effect of Glass Fiber and Graphite on Wear Properties in Tin-Bronze Matrix Composites)

  • 황순홍;김종국;허무영
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1995년도 추계학술대회논문집
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    • pp.181-187
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    • 1995
  • The effet of glass fiber and graphite on the wear properies in tin-bronze alloy matrix composites was studied by a pin-on-disk type wear testing machine. The results obtained from the wear test were analized by SEM observations of worn surfaces of pins and disks and EPMA composition measurments. The amount of wear was devreased as increasing the content of glass fiber in matrix, since the alloy matrix was reinforced by glass fibers. The wear mechanism of the matrix specimen without glass fibers was proved as the contact area delamination. Oxide layer formed on sliding surface led to the increasing wear resistance. Specimens containing graphite particles showed an lubrication effect to counter disks.

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Effect of Oxygen Flux on FTO Thin Films Using DC and RF Sputtering

  • Park, Eun Mi;Lee, Dong Hoon;Suh, Moon Suhk
    • Applied Science and Convergence Technology
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    • 제24권2호
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    • pp.41-46
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    • 2015
  • Transparent conductive oxides (TCOs) are essential material in optoelectronics such as solar cells, touch screens and light emitting diodes. Particularly TCOs are attractive material for infrared cut off film due to their high transparency in the visible wavelength range and high infrared reflectivity. Among the TCO, Indium tin oxide has been widely used because of the high electrical conductivity and transparency in the visible wavelength region. But ITO has several limitations; expensive and low environmental stability. On the other hands, fluorine doped tin oxide (FTO) is well known for low cost, weather ability and stable in acidic and hydrogen. In this study, two different magnetron sputtering techniques with RF and DC modes at room temperature deposition of FTO thin film was conducted. The change of oxygen content is influence on the topography, transmittance and refractive index.

일본(日本) 대곡광산산(大谷鑛山産) Pyrrhotite의 성질(性質) (Polymorphic Variations of Pyrrhotite as related to Tungsten-Tin-Copper Mineralization at the Ohtani Mine, Japan)

  • 김문영;나카무라 타카시
    • 자원환경지질
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    • 제19권1호
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    • pp.57-66
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    • 1986
  • The ore deposit of the Ohtani mine is one of representatives of plutonic tungsten-tin veins related genetically to acidic magmatism of Late Cretaceous in the Inner zone of Southwest Japan. Based on macrostructures of vein filling, three major mineralization stages are distinguished by major tectonic breaks. The constituents of ore minerals are scheelite, cassiterite, chalcopyrite, pyrrhotite, sphalerite, with small amounts of cubanite, stannite, galena, native bismuth, bismuthinite, arsenopyrite and pyrite. The relationship between the polymorphic variations of pyrrhotite and the kinds of the associated characteristic of ore mineral, in relation with hypogene mineralization, has been demonstrated. Pyrrhotite of stage I is predominantly of the hexagonal phase (Hpo>Mpo). Pyrrhotite of stage II is mainly of the monoclinic phase ($Hpo{\ll}Mpo$). Pyrrhotite of stage III is a single monoclinic phase ($Hpo{\ll}Mpo$). The compositions of the hexagonal pyrrhotite decrease in Fe content ranging from 47.44 atom % Fe in stage I to 46.88 atom % Fe in stage III.

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