• Title/Summary/Keyword: thyristor

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Design of Monolithically Integrated Vertical Cavity Laser with Depleted Optical Thyristor for Optically Programmable Gate Array (Optically Programmable Gate Array 구현을 위한 수직 공진형 완전공핍 광싸이리스터)

  • Choi, Woon-Kyung;Kim, Do-Gyun;Choi, Young-Wan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.8
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    • pp.1580-1584
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    • 2009
  • We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

The Aging Diagnostic Technology for Predicting Lifetime of Thyristor Devices (사이리스터 소자의 수명예측을 위한 열화진단기술)

  • Kim, Byung-Cheul;Kim, Hyoung-Woo;Seo, Kil-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.197-201
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    • 2007
  • The accelerated aging test equipment which is possible to apply voltage and temperature at the same time, is fabricated to predict lifetime of high capacity thyristor in short time. The variations of the forward/reverse breakdown voltage and the leakage current are investigated as an aging diagnostic tool. Lifetimes of the devices which are predicted from the reverse breakdown voltage with an accelerated aging time, have shown 3-15 years.

Study of Optimal Location and Compensation Rate of Thyristor-Controlled Series Capacitor Considering Multi-objective Function

  • Shin, Hee-Sang;Cho, Sung-Min;Kim, Jin-Su;Kim, Jae-Chul
    • Journal of Electrical Engineering and Technology
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    • v.8 no.3
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    • pp.428-435
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    • 2013
  • Flexible AC Transmission System (FACTS) application study on enhancing the flexibility of AC power system has continued to make progress. A thyristor-controlled series capacitor (TCSC) is a useful FACTS device that can control the power flow by adjusting line impedances and minimize the loss of power flow and voltage drop in a transmission system by adjusting line impedances. Reduced power flow loss leads to increased loadability, low system loss, and improved stability of the power system. This study proposes the optimal location and compensation rate method for TCSCs, by considering both the power system loss and voltage drop of transmission systems. The proposed method applies a multi-objective function consisting of a minimizing function for power flow loss and voltage drop. The effectiveness of the proposed method is demonstrated using IEEE 14- and a 30-bus system.

A Gate Driver for High Voltage Thyristor Diode Switch

  • Kim, W.H.;Kang, I.;Kim, J.S.;Ryoo, H.J.;Rim, G.H.;Cho, M.H.;Nam, J.H.;Kim, J.W.
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.855-858
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    • 1998
  • Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor diode switches is investigated. This gate driver can operate several high voltage thyristor diode switches at the same time.

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Pulse Multiplication of 6-Pulse Thyristor Converter with Simple Auxiliary Circuit (간단한 보조회로 추가에 의한 6-펄스 싸이리스터 컨버터의 다펄스화)

  • 정재혁;최세완;이인환;황용하
    • The Transactions of the Korean Institute of Power Electronics
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    • v.5 no.6
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    • pp.568-574
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    • 2000
  • A new pulse multiplication technique based on 6-pulse thyristor converters is proposed in this paper. With the proposed technique, 12-pulse, 18-pulse and 24-pulse operations have been obtained both on the input current and on the output voltage. A control strategy over the whole range of phase angle is provided along with sophisticated input current and output voltage analysis. Experimental results from a laboratory prototype verify the proposed theory.

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Harmonic Reduction of Parallel-Connected Thyristor Rectifiers with an Active Interphase Reactor

  • Choi, Sewan;Oh, Junyong;Kim, Kiyong
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.276-280
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    • 1998
  • This paper proposes a harmonic a harmonic reduction technique of the parallel-connected twelve-pulse thyristor rectifiers. The proposed system is an improvement over the diode rectifier system with an active interphase reactor [2]. In this scheme, a low KVA (0.15 Po (PU) ) active current source injects a triangular current into an interphase reactor of a twelve-pulse thyristor rectifier along the phase delay angle. The current injection results in near sinusoidal input current with less than 1% THD. Detailed analysis of the proposed scheme along scheme along with design equations is illustrated. Simulation results verify the concept.

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A New Low Cost Hybrid Power Filter for Thyristor-Controlled Rectifier Load (싸이리스터 정류부하를 위한 새로운 저원가 복합형 전력필터)

  • 한성룡;김수근;석원엽;조정구;송의호;전희종
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.53 no.1
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    • pp.24-29
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    • 2004
  • A new low cost hybrid active filter for thyristor-controlled rectifier load is presented to overcome the high cost problem of the active or the other hybrid active filters. The proposed hybrid active filter which consists of tuned (5th and 7th harmonics) LC passive filters, power factor improvement(PFI) capacitor bank, and active filter compensates power factor as well as harmonic currents. Since most of harmonic currents are filtered by the passive filter and most of reactive power is compensated by the PFI capacitor bank, the power rating of active filter can be minimized, resulting in cost minimization of the proposed hybrid active filter. A 300kVA hybrid active filter system is implemented and tested using 1MVA thyristor rectifier load to verify the operation and performance.

Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor (수평 구조의 MOS-controlled Thyristor에서 채널 길이 및 불순물 농도에 의한 Anode 전류 특성)

  • Jeong, Tae-Woong;Oh, Jung-Keun;Lee, Kie-Young;Ju, Byeong-Kwon;Kim, Nam-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1034-1040
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    • 2004
  • The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

Study of the Device Characteristics of The Base Resistance Controlled Thyristor With The Self-Align Corrugated P-base (자기정렬된 물결모양 P-베이스를 갖는 베이스 저항 제어 사이리스터의 소자특성에 관한 연구)

  • Lee, Yu-Sang;Byeon, Dae-Seok;Lee, Byeong-Hun;Kim, Du-Yeong;Han, Min-Gu;Choe, Yeon-Ik
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.3
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    • pp.167-172
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    • 1999
  • The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{\circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{\circ}C$.

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A Gate Driver for the High Voltage Thyristor-Diode Switch (고전압 싸이리스터 다이오드 스위치 구동회로)

  • Kim, W.H.;Kang, I.;Kim, J.S.;Ryoo, H.J.;Rim, G.H.;Cho, M.H.;Ham, B.H.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.2133-2135
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    • 1998
  • Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor-diode switches is investigated. This gate driver can operate several high voltage thyristor-diode switches at the same time.

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