The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study of the Device Characteristics of The Base Resistance Controlled Thyristor With The Self-Align Corrugated P-base

자기정렬된 물결모양 P-베이스를 갖는 베이스 저항 제어 사이리스터의 소자특성에 관한 연구

  • Published : 1999.03.01
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Abstract

The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{\circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{\circ}C$.

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References

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