• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.4
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• pp.767-783
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• 2013

This paper aims at designing a selective demodulation scheme based on Log-likelihood Ratio threshold (SDLT) instead of the conventional adaptive demodulation (ADM) scheme, by using rateless codes. The major difference is that the Log-likelihood ratio (LLR) threshold is identified as a key factor to control the demodulation rate, while the ADM uses decision region set (DRS) to adjust the bit rate. In the 16-QAM SDLT scheme, we deduce the decision regions over an additive white Gaussian channel, corresponding to the variation of LLR threshold and channel states. We also derived the equations to calculate demodulation rate and bit error rate (BER), which could be proven by simulation results. We present an adaptation strategy for SDLT, and compare it with ADM and adaptive modulation (AM). The simulation results show that our scheme not only significantly outperforms the ADM in terms of BER, but also achieves a performance as good as the AM scheme. Moreover, the proposed scheme can support much more rate patterns over a wide range of channel states.

• Journal of Advanced Navigation Technology
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• v.6 no.3
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• pp.231-240
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• 2002

For a long time target maneuvers in tracking problem have been a difficult task to handle. In order to solve this problems. there have been various tracking techniques. In the development of a tracking filter for a maneuvering target, maneuver detection threshold plays a key role. However, no study of filter performance the varying maneuver detection threshold has been carried out so far. Instead, the maneuver detection have been chosen empirically. In this paper, the effect of detection threshold selection on the performance of the tracking filters was considered and the relationships between maneuvers and the detection threshold have been analyzed by simulation.

• Geotechnical Engineering
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• v.7 no.2
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• pp.41-50
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• 1991

This study investigated the variation of the threshold strain and pore water pressure response of the coils at high amplitude vibration using resonant column test. As a result of tests, threshold shear strains of soft clay, clean quartz sand and stiff volcanic deposit were turned out to be 1$\times$10-2%, 1$\times$10-3%, 1$\times$10-4% respectively. Also, threshold shear Strain was found to be changed with confining pressure for the clean quartz sand. An increase of pore water pressure with shear strain was not significant within the shear strain 3~4$\times$10-3%, but it was abruptly increased beyond shear strain 1$\times$10-2%.

• Journal of the Korea Institute of Military Science and Technology
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• v.20 no.2
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• pp.187-196
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• 2017

The size of raw data has dramatically increased due to the recent trend of Synthetic Aperture Radar(SAR) development plans for high resolution and high definition image acquisition. The large raw data has an impact on satellite operability due to the limitations of storage and transmission capacity. To improve the SAR operability, the SAR raw data shall be compressed before transmission to the ground station. The Block Adaptive Quantization (BAQ) algorithm is one of the data compression algorithm and has been used for a long time in the spaceborne SAR system. In this paper, an optimization method of BAQ threshold table is introduced using real SAR raw data to prevent the degradation of signal quality caused by data compression. In this manner, a new variation estimation strategy and a new threshold method for block type decision are introduced.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.387-394
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• 1997

The influences of laser-induced damage threshold by the after-processing of $Al_2O_3$ thin films was investigated. The samples were fabricated at the substrate temperature of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$ respectively, and the LIDT were measured by using Nd:YAG laser. After the processing with baking and laser conditioning of the samples, the variation of LIDT was measured. It was found that LIDT was enhanced twice by laser-conditioning process and 1.5 times by baking process. In addition, we measured the chemical properties of the thin film structure before and after the processing by using XPS.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.83-88
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• 2003

The reset operation of a CCD image sensor was improved using charge trapping of a MOS structure to realize a loe voltage driving. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2V to 5.5V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with $492(H){\;}{\times}{\;}510(V)$ pixels adopting this structure showed complete reset operation with the driving voltage of 3.0V. The resolution chart taken with the image sensor shows no image flow to the illumination of 30 lux, even in the driving voltage of 3.0V.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.152-158
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• 2006

The objective of this work is to develop the knee joint model for representing various pendulum motions and quantifying the spasticity. Knee joint model included the extension and flexion muscles. The joint moment consists of both the active moment from the stretch reflex and the passive moment from the viscoelastic joint properties. The stretch reflex was modeled as nonlinear feedback of muscle length and the muscle lengthening velocity, which is Physiologically-feasible. Moreover, we modeled the spastic reflex as having dynamic threshold to account far the various pendulum trajectories of spastic patients. We determined the model parameters of three patients who showed different pendulum trajectories through minimization of error between experimental and simulated trajectories. The simulated joint trajectories closely matched with the experimental ones, which show the proposed model can predict pendulum motions of patients with different spastic severities. The predicted muscle force from spastic reflex appeared more frequently in the severe spastic patient, which indicates the dynamic threshold relaxes slowly in this patient as is manifested by the variation coefficient of dynamic threshold. The proposed method provides prediction of muscle force and intuitive and objective evaluation of spasticity and it is expected to be useful in quantitative assessment of spasticity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.95-96
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• 2008

A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.

• Journal of the Optical Society of Korea
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• v.20 no.5
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• pp.601-606
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• 2016

In this study, in order to analyze the low-temperature sintering process of silver and copper nanoparticles, we calculate their melting temperatures and surface melting temperatures with respect to particle size. For this calculation, we introduce the concept of mean-squared displacement of the atom proposed by Shi (1994). Using a parameter defined by the vibrational component of melting entropy, we readily obtained the surface and bulk melting temperatures of copper and silver nanoparticles. We also calculated the absorption cross-section of nanoparticles for variation in the wavelength of light. By using the calculated absorption cross-section of the nanoparticles at the melting temperature, we obtained the laser threshold energy for the sintering process with respect to particle size and wavelength of laser. We found that the absorption cross-section of silver nanoparticles has a resonant peak at a wavelength of close to 350 nm, yielding the lowest threshold energy. We calculated the intensity distribution around the nanoparticles using the finite-difference time-domain method and confirmed the resonant excitation of silver nanoparticles near the wavelength of the resonant peak.