• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.315-320
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• 1988

This paper considers modelling and control of ABS(Anti-skid Brake System) which avoids dangerous wheel locking due to excessive brake pressure during the vehicle braking. The brake pressure is controlled by on and off's of solenoid valves via the variation of the wheel circumferential deceleration measured using tacho-sensors. The dynamic model between the brake pressure and the wheel acceleration of a vehicle is mathematically derived. The computer simulation shows that the threshold value of the on-off control is critical to the performance of the ABS.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.1-11
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• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• Proceedings of the Korean Information Science Society Conference
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• 2007.10a
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• pp.165-166
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.364-369
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• 2011

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by $7.1{\times}10^1$. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.163-169
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• 1992

A new analytical expression for the temperature variation characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT), between 223K and 433K, is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled between -5$0^{\circ}C$ and 9$0^{\circ}C$. The model is based on three functions obtained from the experimental data of IS1DT versus VS1GT. Theoretical results confirm the simple form of the model in terms of the device geometry. It was determined that as the temperature increased, the saturated drain current increased and, at a fixed gate voltage, the device saturated at increasingly larger drain voltages while the threshold voltages decreased.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.4
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• pp.371-374
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• 2012

DC/DC switching power converters produce DC output voltages from different stable DC input sources regulated by a bi-polar transistor. The converters can be used in regenerative braking of DC motors to return energy back in the supply, resulting in energy savings for the systems containing frequent stops. The voltage mode DC/DC converter is composed of a PWM (Pulse Width Modulation) controller, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), an inductor, and capacitors, etc. PWM is applied to control and regulate the total output voltage. It is shown that the output of DC/DC converter depends on the variation of threshold voltage at MOSFET and the variation of pulse width. In the PWM operation, the missing pulses, the changes in pulse width, and a change in the period of the output waveform are studied by SPICE (Simulation Program with Integrated Circuit Emphasis) and experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.61-67
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• 2006

We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.4
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• pp.246-250
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• 2014

Large mutual capacitance touch screen panels (TSP) are susceptible to display and ambient noise. This paper presents a multi-touch detection algorithm using an efficient noise compensation technique for large mutual capacitance TSPs. The sources of noise are presented and analyzed. The algorithm includes the steps to overcome each source of noise. The algorithm begins with a calibration technique to overcome the TSP mutual capacitance variation. The algorithm also overcomes the shadow effect of a hand close to TSP and mutual capacitance variation by dynamic threshold calculations. Time and space filters are also used to filter out ambient noise. The experimental results were used to determine the system parameters to achieve the best performance.

• Journal of information and communication convergence engineering
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• v.7 no.2
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.901-904
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• 2005

A novel active matrix organic light diodes (AMOLEDs) voltage-programming pixel structure with current-correction method is proposed for largesize and high-resolution poly-Si AMOLED panel applications. The HSPICE simulation results shows that the maximum error of emission current in proposed pixel is 1.536%, 2.45%, and 2.97% with the ${\pm}12.5%$ mobility variation and ${\pm}0.3V$ threshold voltage variation for 30-, 40-, and 50-inch HDTV panels, respectively.