• Title/Summary/Keyword: threshold power

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Design of 850 nm Vertical-Cavity Surface-Emitting Lasers by Using a Transfer Matrix Method (전달 행렬 방법을 이용한 850 nm수직 공진기 레이저 구조의 최적설계)

  • Kim Tae-Yong;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.35-46
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    • 2004
  • In comparison with edge-emitting lasers(EELs), predicting the output power and slope efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the absorption loss in DBR layers. However, by using transfer matrix method(TMM), we've made possible to calculate such parameters of multi-layer structures like VCSELs. In this paper, we've calculated the threshold gain, threshold current and slope efficiency through the methodology based on TMM. Also TMM is the way of customizing the VCSEL structure for the desired threshold current and slope efficiency by changing the number of DBR mirror layers.

The Threshold Based Cluster Head Replacement Strategy in Sensor Network Environment (센서 네트워크 환경의 임계값 기반 클러스터 헤드 지연 교체 전략)

  • Kook, Joong-Jin;Ahn, Jae-Hoon;Hong, Ji-Man
    • Journal of Internet Computing and Services
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    • v.10 no.3
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    • pp.61-69
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    • 2009
  • Most existing clustering protocols have been aimed to provide balancing the residual energy of each node and maximizing life-time of wireless sensor networks. In this paper, we present the threshold based cluster head replacement strategy for clustering protocols in wireless sensor networks. This protocol minimizes the number of cluster head selection by preventing the cluster head replacement up to the threshold of residual energy. Reducing the amount of head selection and replacement cost, the life-time of the entire networks can be extended compared with the existing clustering protocols. Our simulation results show that our protocol outperformed than LEACH in terms of balancing energy consumption and network life-time.

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The RF performance degradation in Bulk DTMOS due to Hot Carrier effect (Hot Carrier 현상에 의한 Bulk DTMOS의 RF성능 저하)

  • Park Jang-Woo;Lee Byoung-Jin;Yu Jong-Gun;Park Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.9-14
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    • 2005
  • This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.

Double Opportunistic Transmit Cooperative Relaying System with GSC in Rayleigh Fading Channels

  • Kim, Nam-Soo;Lee, Ye-Hoon
    • Journal of electromagnetic engineering and science
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    • v.10 no.4
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    • pp.270-275
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    • 2010
  • In a conventional opportunistic transmit (COT) cooperative relaying system, only the relays that receive signal-to-noise ratio (SNR) from the source and that exceed the threshold transmit to the destination. The COT system, however, only considers the SNR of the source-relay (S-R) path regardless that the SNR of the relay-destination (R-D) path is the opportunistic transmission condition. For that reason, it is not guaranteed that all the transmitted signals from relays exceed the threshold at the destination. Therefore we propose a double opportunistic transmit (DOT) cooperative relaying system - when both of the received SNR from a source and from a destination exceed the threshold, the relay transmits to the destination. It is shown that the proposed DOT system reduces power consumption by 6.9, 20.9, 32.4, and 41.4 % for K =3, 5, 7, and 9, respectively under the given condition of $P_{out}=1{\times}10^{-3}$ and $\overline{\gamma}_{SR}/\Gamma_{SR}$=30 dB, compared to the COT system. We noticed that the performance of the DOT system is superior to that of the COT system for the identical number of active transmit relays under the same condition of the normalized average SNR of $\overline{\gamma}_{RD}/\Gamma_{RD}$.

Wearable Approach of ECG Monitoring System for Wireless Tele-Home Care Application

  • Kew, Hsein-Ping;Noh, Yun-Hong;Jeong, Do-Un
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.05a
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    • pp.337-340
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    • 2009
  • Wireless tele-home-care application gives new possibilities for ECG (electrocardiogram) monitoring system with wearable biomedical sensors. Thus, continuously development of high convenient ECG monitoring system for high-risk cardiac patients is essential. This paper describes to monitor a person's ECG using wearable approach. A wearable belt-type ECG electrode with integrated electronics has been developed and has proven long-term robustness and monitoring of all electrical components. The measured ECG signal is transmitted via an ultra low power consumption wireless sensor node. ECG signals carry a lot clinical information for a cardiologist especially the R-peak detection in ECG. R-peak detection generally uses the threshold value which is fixed thus it bring errors due to motion artifacts and signal size changes. Variable threshold method is used to detect the R-peak which is more accurate and efficient. In order to evaluate the performance analysis, R-peak detection using MIT-BIH databases and Long Term Real-Time ECG is performed in this research. This concept able to allow patient to follow up critical patients from their home and early detecting rarely occurrences of cardiac arrhythmia.

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Interface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET (GaN Schottky Barrier MOSFET의 출력 전류에 대한 계면 트랩의 영향)

  • Park, Byeong-Jun;Kim, Han-Sol;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.271-277
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    • 2022
  • We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the Nit distribution using TCAD simulation. As interface trap number density (Nit) increased, the threshold voltage increased while the drain current density decreased. Under Nit=5.0×1010 cm-2 condition, the threshold voltage was 3.2 V for VDS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the Nit distribution type, there was an increase in the subthreshold swing (SS) following an increase in Nit. Under U-shaped Nit distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Qf) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

Multipaction Sensitivity Analysis of X-band Output Filter for Geostationary Satellite (정지궤도위성 X-대역 출력필터 멀티팩션 민감도 해석)

  • Kim, Joong-Pyo;Lee, Sun-Ik;Lim, Won-Gyu;Kim, Sang-Goo;Lee, Sang-Kon
    • Journal of Satellite, Information and Communications
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    • v.10 no.3
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    • pp.131-136
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    • 2015
  • In this paper, prior to the flight model X-band dual-mode circular cavity filter required for the high power transmission of the observation payload in the geostationary satellite, the development model are designed and analyzed to show the analytical multipactor requirement margin. First of all, the multipaction breakdown power sensitivities were analyzed by changing the iris width and thickness within the filter, and through that the iris width and thickness was selected and then the multipaction threshold powers over the frequencies within the bandwidth were analyzed and the required margin of 8 dB was obtained. Also for the high power transmission filter, another important phenomena known as corona breakdown are analyzed for the iris width and thickness changes. Finally the development model manufactured was tested and the results met the key requirements.

DTMOS Schmitt Trigger Logic Performance Validation Using Standard CMOS Process for EM Immunity Enhancement (범용 CMOS 공정을 사용한 DTMOS 슈미트 트리거 로직의 구현을 통한 EM Immunity 향상 검증)

  • Park, SangHyeok;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.917-925
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    • 2016
  • Schmitt Trigger logic is a gate level design method to have hysteresis characteristics to improve noise immunity in digital circuits. Dynamic Threshold voltage MOS(DTMOS) Schmitt trigger circuits can improve noise immunity without adding additional transistors but by controlling substrate bias. The performance of DTMOS Schmitt trigger logic has not been verified yet in standard CMOS process through measurement. In this paper, DTMOS Schmitt trigger logic was implemented and verified using Magna $0.18{\mu}m$ MPW process. DTMOS Schmitt trigger buffer, inverter, NAND, NOR and simple digital logic circuits were made for our verification. Hysteresis characteristics, power consumption, and delay were measured and compared with common CMOS logic gates. EM Immunity enhancement was verified through Direct Power Injection(DPI) noise immunity test method. DTMOS Schmitt trigger logics fabricated using CMOS process showed a significantly improved EM Immunity in 10 M~1 GHz frequency range.

A Study on the Uplink SDMA Systems: User Scheduling, Transmit Power Control, and Receive Beamforming (상향링크 공간 분할 다중 접속 시스템에서 사용자 스케쥴링, 송신 전력 제어, 수신 빔포밍에 관하여)

  • Cho, Moon-Je;Ban, Tae-Won;Jung, Bang Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.2
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    • pp.289-294
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    • 2014
  • In this paper, we investigate the user scheduling, transmit beamforming, and receive beamforming of uplink space division multiple access (SDMA) systems where multiple users are allowed to transmit their signal to a base station (BS) using the same frequency band simultaneously. The BS performs a receive beamforming using the predetermined pseudo-random pattern and select users with a specific criterion. Especially, in this paper, we propose the threshold-based transmit power control, in which a user decrease its transmit power according if its generating interference to other users's signal is larger than a predetermined threshold. Assuming that the TDD system is used, the channel state information (CSI) can be obtained at each user from pilot signals from the BS. Simulation results show that the proposed technique significantly outperforms the existing user scheduling algorithms.

Investigation into Transformer Protective Relay Setting Rule Considering Error Ratio (오차를 고려한 765kV 변압기 보호 계전 정정룰 고찰)

  • Bae, Y.J.;Lee, S.J.;Choi, M.S.;Kang, S.H.;Kim, S.T.;Choi, J.L.;Jeong, C.H.;Yoo, Y.S.;Cho, B.S.
    • Proceedings of the KIEE Conference
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    • 2002.07a
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    • pp.229-231
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    • 2002
  • The digital current differential relaying scheme is widely used for primary protection of 765(kV) power transformer. The current differential relay pickup the internal fault at the threshold which is set at 30% of rating current. Margin of 30% include current transformer error 5%, relay error 5%, on load tap changer error 7% and margin factor 140% obtained from the field experience. In this paper transformer protection relay and relay setting rule of high voltage power system are discussed. And we verify the correctness of relay setting rule with current differential relay using Matlab simulation.

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