• KEPCO Journal on Electric Power and Energy
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• v.6 no.1
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• pp.59-64
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• 2020

Scheduling of electric vehicles and optimizing for charging waiting time have been critical. Meanwhile, it is challengeable to exploit the fluctuating data from electric vehicles in real-time. We introduce an optimal routing algorithm and a simulator with electric vehicles obeying the Poisson distribution of the observed information about time, space and energy-demand. Electric vehicle routing is updated in every cycle even it is already set. Also, we suggest an electric vehicle routing algorithm for minimizing total trip time, considering a threshold of the waiting time. Total trip time and charging waiting time are decreased 34.3% and 86.4% respectively, compared to the previous algorithm. It can be applied to the information service of charging stations and utilized as a reservation service.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.54 no.12
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• pp.561-566
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• 2005

This paper introduces a compression technique for power qualify disturbance signal via discrete wavelet transform(DWT). The proposed approach is based on a previous estimation of the stationary component of power quality disturbance signal, so that it could be subtracted from the original signal in order to reduce a dynamic range of signal and generate transient events signal, which is subsequently applied to the compression technique. The compression techniques is performed through the difference signal decomposition, thresholding of wavelet coefficients, and signal reconstruction. It presents the relation between compression efficiency and threshold. It shouts that the wavelet transform leads to a power quality data compression approach with high compression efficiency, small compression error and good de-nosing effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.555-560
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• 2015

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.6
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• pp.1418-1432
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• 2013

This paper studies the problem of secure information exchange between two sources via multiple relays in the presence of an eavesdropper. To this end, we propose a relay beamforming scheme, i.e., relay beamforming with artificial noise (RBwA), where the relay beamforming vector and the artificial noise vector are jointly designed to maintain the received signal-to-interference-ratio (SINR) at the two sources over a predefined Quality of Service (QoS) threshold while limiting the received SINR at the eavesdropper under a predefined secure threshold. For comparison, the relay beamforming without artificial noise (RBoA) is also considered. We formulate two optimization problems for the two schemes, where our goal is to seek the optimal beamforming vector to minimize the total power consumed by relay nodes such that the secrecy of the information exchange between the two sources can be protected. Since both optimization problems are nonconvex, we solve them by semidefinite program (SDP) relaxation theory. Simulation results show that, via beamforming design, physical layer secrecy of two-way relay networks can be greatly improved and our proposed RBwA outperforms the RBoA in terms of both low power consumption and low infeasibility rate.

• Journal of IKEEE
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• v.14 no.3
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• pp.250-255
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• 2010

The interleaved power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. The buck-boost converter used to provide the high output voltage and low output voltage for portable applications. Also we used the PWM(Pulse Width Modulation) control method for high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The interleaved PMIC to reduce output ripple. And step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.

• Journal of Oral Medicine and Pain
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• v.39 no.4
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• pp.146-151
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• 2014

Purpose: To determine whether a fatiguing clench significantly affects the changes in pressure pain threshold (PPT) in men compared to women. Methods: The changes of PPTs from before to after a sustained clench in 12 men and 12 women were obtained. We used a decrease in median frequencies of surface electromyography (EMG) power spectra from the start to the end of the sustained clench as evidence of fatigue. Endurance time for the clench was used as a covariate. Results: The median frequencies decreased after the clench in both the anterior temporalis and masseter muscles, did not differ with the muscle or the gender of the subjects, and none of the interaction terms were significant. The PPTs were lower for women for both muscles, were decreased after the sustained clench, but failed to show the hypothesized gender by time interaction. Conclusions: Our results show that women have lower PPTs than men, but do not respond differently than men to jaw muscle fatigue.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.736-742
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• 2000

Mass removed from crystalline silicon samples during high power single-pulse laser ablation was studied by measuring the resulting crater morphology with a white light interferometric microscope. The volume and depth of the craters show a strong nonlinear change as the laser irradiance increases across a threshold value, that is, approximately $2.2{\times}10^{10}\;W/cm^2$. Time-resolved shadowgraph images of the ablation plume show the ejection of large particulates from the sample for laser irradiance above the threshold, with a time delay of about 300-400 nsec. The thickness of superheated liquid layer near the critical temperature was numerically estimated, considering the transformation of liquid metal into liquid dielectric near the critical state (i.e., induced transparency). The estimated thickness of the superheated layer at a delay time of 200 nsec agreed with the measured crater depths, suggesting that induced transparency promotes the formation of a deep superheated liquid layer which leads to an explosive boiling responsible for the sudden increase of crater volume and depth.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Nuclear Engineering and Technology
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• v.54 no.4
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• pp.1301-1311
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• 2022

Global climate change brings environmental quality sensitivity, especially in developed countries. Developed countries use non-renewable energy sources intensively both in their own countries and in other countries, they make productions that cause an enormous rate of increase in CO₂ emissions and unsustainable environmental costs. This has increased the interest in environmentally friendly alternative energy sources. The aim of this study is to investigate the impact of nuclear energy consumption and technological innovation on environmental quality in G7 countries using annual data over the period 1970-2015. The Panel Threshold Regression Model was used for the analysis. Empirical findings have indicated that the relationship between nuclear energy consumption and carbon emissions differs according to innovation for nuclear power plants. It was also concluded that nuclear energy consumption reduces carbon emissions more after a certain level of innovation. This result shows that the increase in innovative technologies for nuclear power plants not only increases energy efficiency but also contributes positively to environmental quality.