• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• Nuclear Engineering and Technology
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• v.56 no.3
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• pp.846-854
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• 2024

FEMAXI-ATF is being developed for fuel performance modeling of SiC cladded UO2 fuel with focuses on modeling pellet-cladding mechanical interactions (PCMI). The code considers probability distributions of mechanical strengths of monolithic SiC (mSiC) and SiC fiber reinforced SiC matrix composite (SiC/SiC), while it models pseudo-ductility of SiC/SiC and propagation of cladding failures across the wall thickness direction in deterministic manner without explicitly modeling cracks based on finite element method in one-dimensional geometry. Some hypothetical BWR power ramp conditions were used to test sensitivities of different model parameters on the analyzed PCMI behavior. The results showed that propagation of the cladding failure could be modeled by appropriately reducing modulus of elasticities of the failed wall element, so that the mechanical load of the failed element could be re-distributed to other intact elements. The probability threshold for determination of the wall element failure did not have large influence on the predicted power at failure when the threshold was varied between 25 % and 75 %. The current study is still limited with respect to mechanistic modeling of SiC failure as it only models the propagation of the cladding wall element failure across the homogeneous continuum wall without considering generations and propagations of cracks.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.128-133
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• 1994

This paper proposes a new TTL-to-CMOS converter which has low power dissipation. This converter has no static power dissipation for typical TTL output voltage levels. The simulatio result shows that the power dissipation is reduced to about 1/20 of conventional level converter using CMOS inverters. It also has hysteresis due to the positive feedback which makes the converter noise immune. The logic threshold voltages in the hysteresis characteristic can be optimized by changing the size ratios of the transistors.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.107-113
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• 2016

All circuits in power input can only use the power provided by an external power supply. General electronic circuits use a secondary supply generated by a converter using a primary power in the power input. But protection and detection circuit for over-voltage circuit or under-voltage in power input have to use that input power because there is no other supply in power input. Therefore, previous electronics for satellite can protect only over-voltage using a zener diode, and can't detect over-voltage and under-voltage events, and provide a detection capability for over-voltage and under-voltage only for secondary supply. The proposed circuit can detect over-voltage and under-voltage using a single supply for the primary power input, +28V, with the threshold characteristics for MOS-FET, and the accuracy for a detection circuit is increased by 2.5%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.9
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• pp.1367-1373
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• 2022

In this paper, we consider a power re-allocation technique in order to enhance the frequency efficiency of the low performance user in a cell-free multiple input multiple output (MIMO) network. The AP first allocates transmit power to the user to be proportional to the large-scale fading coefficients of the connected users. Then, the AP reduces the power of the users who were allocated power greater than the threshold ratio of total allocated power to be equal to the threshold ratio of the allocated power. Finally, the AP re-allocates the reduced power from the strong channel user to the user who has the worst channel condition, and thus, the frequency efficiency of the low performance user can be enhanced. In the simulation results, we verify the performance of the power re-allocation technique in terms of the spectral efficiency of the low performance user.

• Laser Solutions
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• v.2 no.3
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• pp.52-61
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• 1999

The laser induced forward transfer(LIFT) technique employs a pulsed laser to transfer parts of a thin metal film from an optically transparent target onto an arbitrary substrate in close proximity to the metal film on the target. In this work, a two-step method, the combination of LIFT process, in which a Au film deposited on the $Al_2$O$_3$ substrate by Nd:YAG laser and subsequent Au electroless metal plating on the by LIFT process generated Au seed, was presented. The influence of laser parameters, wavelength, laser power, film thickness and overlap ratio of pulse tracks, on the shapes of deposit and conductor line after electroless plating is experimentally studied. As a results, the threshold power densities for ablation, deposition and metallization were determined and comparison of threshold value between the wave length 1064nm and the second harmonic generated 532nm. In odor to determine a possible application in the electronic industry, a smallest conduct spot size, line width and isolated line space were generated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• Speech Sciences
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• v.9 no.4
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• pp.253-263
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• 2002

In this paper, we propose new algorithm of speaker recognition which identifies the speaker using the information obtained by the intensive speech feature analysis such as pitch, intensity, duration, and formant, which are crucial parameters of individual voice, for candidates of high percentage of wrong recognition in the existing speaker recognition algorithm. For testing the power of discrimination of individual parameter, DTW (Dynamic Time Warping) is used. We newly set the range of threshold which affects the power of discrimination in speech verification such that the candidates in the new range of threshold are finally discriminated in the next stage of sound parameter analysis. In the speaker verification test by using voice DB which consists of secret words of 25 males and 25 females of 8 kHz 16 bit, the algorithm we propose shows about 1% of performance improvement to the existing algorithm.

• Laser Solutions
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• v.3 no.3
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• pp.39-45
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• 2000

The volume and depth of the craters produced on silicon samples during high power laser ablation show a strong nonlinear change as the laser irradiance increases across a threshold value, approximately 2.2$\times$10$\^$10/ W/㎠. Time-resolved shadowgraph images of the ablation plume reveal the ejection of large particulates from the sample for laser irradiance above the threshold, with a time delay of about 300-400 ㎱. The numerically estimated thickness of the superheated liquid layer, considering the transformation of liquid metal into liquid dielectric near the critical state, agrees with the measured agrees with crater depths. It is suggested that a phase explosion of the deep superheated liquid layer near the critical state is responsible for the measured sudden increase of crater volume and the ejection of large particulates.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.4
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• pp.1059-1067
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• 1996

A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.