Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Abnormal Voltage Detection Circuit with Single Supply Using Threshold of MOS-FET for Power Supply Input Stage

FET 문턱전압 특징을 이용한 전원입력단용 단일전원 이상전원 검출회로

  • Won, Joo Ho (Satellite Electronics Team, Korea Aerospace Research Institute) ;
  • Ko, Hyoungho (Department of Electronics, Chungnam National University)
  • 원주호 (한국항공우주연구원 위성전자팀) ;
  • 고형호 (충남대학교 전자공학과)
  • Received : 2016.08.10
  • Accepted : 2016.10.19
  • Published : 2016.11.25
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Abstract

All circuits in power input can only use the power provided by an external power supply. General electronic circuits use a secondary supply generated by a converter using a primary power in the power input. But protection and detection circuit for over-voltage circuit or under-voltage in power input have to use that input power because there is no other supply in power input. Therefore, previous electronics for satellite can protect only over-voltage using a zener diode, and can't detect over-voltage and under-voltage events, and provide a detection capability for over-voltage and under-voltage only for secondary supply. The proposed circuit can detect over-voltage and under-voltage using a single supply for the primary power input, +28V, with the threshold characteristics for MOS-FET, and the accuracy for a detection circuit is increased by 2.5%.

전원입력단에 사용되는 회로는 입력전원만을 사용할 수가 있다. 일반적인 전자회로는 입력전원을 이용하는 전압변환기에 의해 생성되는 2차전원을 이용하게 된다. 하지만 전원입력단의 저전압 및 과전압에 의한 고장에 대비하기 위한 보호회로는 2차 전원을 사용할 수가 없기 때문에, 입력전원만을 이용해서 구현이 되어야 한다. MOS FET의 문턱전압 특성을 이용한 저전압/과정압 검출회로는 50V 입력전압만을 이용해서, 정상적인 전압범위를 벗어나는 저전압/과전압 현상을 정상적으로 검출할 수가 있고, 기존의 Zener diode만으로 보호만 가능했던 것을 검출이 가능하게 되었고, 이상전압검출회로의 동작의 정확도를 결정하는 기준전압은 환경조건 등에 의해서 발생할 수 있는 모든 변수를 고려하면 최악조건 해석상으로 8.4%에서 2.5%로 향상되었다.

Keywords

References

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