• 제목/요약/키워드: three dimensional packaging

검색결과 51건 처리시간 0.033초

Quasi-static Analysis on the Effect of the Finite Metal with the Anisotropic Grooved Dielectric in Microstrip Lines

  • Hong Ic-Pyo
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.17-20
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    • 2005
  • In this paper, we presented the quasi-static characteristics of novel microstrip lines with anisotropic grooved dielectric in finite metal. A quasi-static mode-matching method has been used to analyze this new structure and the simulation results are validated through comparison with other available results. The results in this paper show that it is possible to control the propagation characteristics of microstrip lines with the use of anisotropic grooved dielectric in finite metal. Also anisotropic grooved dielectric in microstrip line can be newly added to the design parameters of high performance three dimensional monolithic microwave circuits and other microwave applications.

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TSV 기반 3차원 소자의 열적-기계적 신뢰성 (Thermo-Mechanical Reliability of TSV based 3D-IC)

  • 윤태식;김택수
    • 마이크로전자및패키징학회지
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    • 제24권1호
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    • pp.35-43
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    • 2017
  • The three-dimensional integrated circuit (3D-IC) is a general trend for the miniaturized and high-performance electronic devices. The through-silicon-via (TSV) is the advanced interconnection method to achieve 3D integration, which uses vertical metal via through silicon substrate. However, the TSV based 3D-IC undergoes severe thermo-mechanical stress due to the CTE (coefficient of thermal expansion) mismatch between via and silicon. The thermo-mechanical stress induces mechanical failure on silicon and silicon-via interface, which reduces the device reliability. In this paper, the thermo-mechanical reliability of TSV based 3D-IC is reviewed in terms of mechanical fracture, heat conduction, and material characteristic. Furthermore, the state of the art via-level and package-level design techniques are introduced to improve the reliability of TSV based 3D-IC.

마이크로 솔더볼의 레이저 솔더링에 관한 연구 (Research on Laser Soldering of Micro Solder-balls)

  • 강희신;서정;이제훈;김정오;신희원;김도열
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.661-662
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    • 2006
  • This research is on a laser soldering using the micro solder-balls used in flip chip packaging process. A laser source used in laser soldering is Nd:YAG laser(250W and 60W). Solder-balls of 100, 300, $500{\mu}m$ size are used in experiments. The laser head to deliver a laser beam and the nozzle to transfer solder-balls are manufactured to bump solder-balls. After soldering solder-balls the shear test is carried out to determine the wetting at the interface between the surface and a solder-balls With the results of solder bumping tests a laminated molding is accomplished for manufacturing the three dimensional molding.

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3차원 실장을 위한 Non-PR 직접범핑법 (Non-PR direct bumping for 3D wafer stacking)

  • 전지헌;홍성준;이기주;이희열;정재필
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2007년 추계학술발표대회 개요집
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    • pp.229-231
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    • 2007
  • Recently, 3D-electronic packaging by TSV is in interest. TSV(Through Silicon Via) is a interconnection hole on Si-wafer filled with conducting metal such as Copper. In this research, chips with TSV are connected by electroplated Sn bump without PR. Then chips with TSV are put together and stacked by the methode of Reflow soldering. The stacking was successfully done and had no noticeable defects. By eliminating PR process, entire process can be reduced and makes it easier to apply on commercial production.

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Quantitative Evaluation Method for Etch Sidewall Profile of Through-Silicon Vias (TSVs)

  • Son, Seung-Nam;Hong, Sang Jeen
    • ETRI Journal
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    • 제36권4호
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    • pp.617-624
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    • 2014
  • Through-silicon via (TSV) technology provides much of the benefits seen in advanced packaging, such as three-dimensional integrated circuits and 3D packaging, with shorter interconnection paths for homo- and heterogeneous device integration. In TSV, a destructive cross-sectional analysis of an image from a scanning electron microscope is the most frequently used method for quality control purposes. We propose a quantitative evaluation method for TSV etch profiles whereby we consider sidewall angle, curvature profile, undercut, and scallop. A weighted sum of the four evaluated parameters, nominally total score (TS), is suggested for the numerical evaluation of an individual TSV profile. Uniformity, defined by the ratio of the standard deviation and average of the parameters that comprise TS, is suggested for the evaluation of wafer-to-wafer variation in volume manufacturing.

자동차 설계를 위한 한국인 3차원 표준 형상의 선정 (3-D Body Typing of Korean Adults and its Application to Vehicle Design)

  • 홍승우;박성준;정의승
    • 대한인간공학회지
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    • 제25권2호
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    • pp.85-94
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    • 2006
  • The purpose of this study is to extract typical body shapes of Korean adults based on the three-dimensional Korean anthropometric data measured through 5th national anthropometric survey and to examine the suitability of the 3-D human shape data for the interior packaging. 36 three-dimensional anthropometric variables related to the design of vehicle interior were considered for the appraisal of typical body shapes. Four major factors were extracted by the factor analysis and factor scores were calculated for all subjects. Typical or standard drivers of Korean adults were selected by the minimum deviation criteria for the four factor scores with respect to 5th, 50th, and 95th percentiles, respectively. Typical drivers of Korean adults were visualized by the CATIA-HUMAN program due to the absence of proper application software for three-dimensionally scanned human body data. There are considerable differences between the anthropometric data of Korean adults and those provided by CATIA-HUMAN program, which shows that the modeling data provided by CATIA-HUMAN should not be directly applied to the ergonomic evaluation for the vehicle design. This suggests the necessity for the development of suitable software for scanned human shape data. It is also expected that the anthropometric data of typical drivers extracted from this study help design package layouts and improve the suitability of ergonomic evaluation for Korean customers.

3-Dimensional Micro Solder Ball Inspection Using LED Reflection Image

  • Kim, Jee Hong
    • International journal of advanced smart convergence
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    • 제8권3호
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    • pp.39-45
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    • 2019
  • This paper presents an optical technique for the three-dimensional (3D) shape inspection of micro solder balls used in ball-grid array (BGA) packaging. The proposed technique uses an optical source composed of spatially arranged light-emitting diodes (LEDs) and the results are derived based on the specular reflection characteristics of the micro solder balls for BGA A vision system comprising a camera and LEDs is designed to capture the reflected images of multiple solder balls arranged arbitrarily on a tray and the locations of the LED point-light-source reflections in each ball are determined via image processing, for shape inspection. The proposed methodology aims to determine the presence of defects in 3D BGA shape using the statistical information of the relative positions of multiple BGA balls, which are included in the image. The presence of the BGA balls with large deviations in relative position imply the inconsistencies in their shape. Experiments were conducted to verify that the proposed method could be applied to inspection without sophisticated mechanism and productivity problem.

다차원 이종 복합 디바이스 인터커넥션 기술 - 레이저 기반 접합 기술 (Laser-Assisted Bonding Technology for Interconnections of Multidimensional Heterogeneous Devices)

  • 최광성;문석환;엄용성
    • 전자통신동향분석
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    • 제33권6호
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    • pp.50-57
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    • 2018
  • As devices have evolved, traditional flip chip bonding and recently commercialized thermocompression bonding techniques have been limited. Laser-assisted bonding is attracting attention as a technology that satisfies both the requirements of mass production and the yield enhancement of advanced packaging interconnections, which are weak points of these bonding technologies. The laser-assisted bonding technique can be applied not only to a two-dimensional bonding but also to a three-dimensional stacked structure, and can be applied to various types of device bonding such as electronic devices; display devices, e.g., LEDs; and sensors.

관성 항법 장치급 서보 가속도계용 다단차 3차원 실리콘 미세 구조물 제작 (Fabrication of Multi-stepped Three Dimensional Silicon Microstructure for INS Grade Servo Accelerometer)

  • 이영주;이상훈;전국진;김용권;조동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.425-427
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    • 1996
  • New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four $16{\mu}m$ thick flexural spring beams, $290{\mu}m$ thick proof mass, mesas for overrange stop with $10{\mu}m$ height from the surface of the proof mass, and the other mesas and V grooves used for assembling this structure to the packaging frame of pendulous servo accelerometer. Using the numerical finite element method (FEM) simulator: ABAQUS, mechanical characteristics of the fabricated microstructure by the developed technique was compared with those of the same structure processed by one step silicon bulk etch followed by oxidation and patterning the etched region.

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Optimal pressure and temperature for Cu-Cu direct bonding in three-dimensional packaging of stacked integrated circuits

  • Seunghyun Yum;June Won Hyun
    • 한국표면공학회지
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    • 제56권3호
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    • pp.180-184
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    • 2023
  • Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm2. Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.