Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.11a
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- Pages.425-427
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- 1996
Fabrication of Multi-stepped Three Dimensional Silicon Microstructure for INS Grade Servo Accelerometer
관성 항법 장치급 서보 가속도계용 다단차 3차원 실리콘 미세 구조물 제작
- Yee, Young-Joo (School of Electrical Engineering, Seoul National University) ;
- Lee, Sang-Hoon (School of Electrical Engineering, Seoul National University) ;
- Chun, Kuk-Jin (School of Electrical Engineering, Seoul National University) ;
- Kim, Yong-Kwon (School of Electrical Engineering, Seoul National University) ;
- Cho, Dong-Il (School of Electrical Engineering, Seoul National University)
- Published : 1996.11.16
Abstract
New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four
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