• Journal of The Korean Society of Agricultural Engineers
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• v.51 no.5
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• pp.51-58
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• 2009

The total recovery ratio test on undisturbed clay soil sampling in the field and the finite element method analysis on modified static state of penetration process were conducted for the purpose of deciding the most important factor among the shape factors of thin wall tube. The adhesion between tube wall and soil did not decrease although internal clearance ratio of tube increased within the little change of tube area ratio. The most part of disturbance occurred in the tip of sampling tube during the penetration. The longitudinal displacement was larger than the lateral displacement because soil was confined laterally after being entered into tube, and also the longitudinal displacement was larger in the upper part of the sample tube than in the lower part.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.51.4-52
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• 2017

We present the derived kinematic characteristics of low-${\alpha}$ thin-disk and high-${\alpha}$ thick-disk stars in the Milky Way, investigated with a sample of about 33,900 G- and K-type dwarfs from the Sloan Extension for Galactic Understanding and Exploration (SEGUE). Based on the level of ${\alpha}$-element enhancement as a function of [Fe/H], we separate our sample into thin- and thick-disk stars and then derive mean velocity, velocity dispersion, and velocity gradients for the U, V and W velocity components, respectively, as well as the orbital eccentricity distribution. There are notable gradients in the V velocity over [Fe/H] in both populations: -23 km s-1 dex-1 for the thin disk and +44 km s-1 dex-1 for the thick disk. The velocity dispersion of the thick disk decrease with increasing [Fe/H], while the velocity.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.58-59
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• 2003

We have developed a simple model allowing further clarifications of the magnetoresistance (MR) contribution to the giant magnetoimpedance (GMI) effect in thin films. The theoretical considerations are the following. It is absolutely assumed that a thin film with no magnetic domain structure and a high frequency ac current I = I$\sub$0/e$\^$iwt/ flowing parallel to the Z direction in the plane of the film. The sample has the thickness 2a in the X direction, thus the Y direction in the plane of the sample and perpendicular to the current direction. The transverse permeability ${\mu}$$\sub$Y/ in the Y direction is uniform. In the case of GMI effect, the total impedance Z = R + iX can be written as.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.190-191
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• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• v.10 no.2
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• pp.137-145
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• 2005

The effects of air temperature and sample thickness on drying kinetics of strawberry leather were investigated. The mathematical modeling was performed by using three thin-layer dying models. The independent variables were sample thickness (S1 = 1.8, S2 = 2.7, and S3 = 3.6mm) and air temperature (50, 60, 70, and 80$^{\circ}$C). All samples took place in the falling rate period. The values of effective moisture diffusivity, D$_{eff}$ varied from 2.40 to 12.1$^{\times}$10-9m$^{2}$/s depending on drying conditions. The values of activation energy, E$_{a}$ were 35.57, 33.14, and 30.46 KJ/mol for each sample of S1, S2, and S3. The two-term exponential model was found to satisfactorily describe the thin-layer drying kinetics of strawberry leather.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.27-27
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• 1998

진공기술의 응용과 진공환경의 이용은 더 이상 논하지 않더라도 산업 전반에 그 충요성이 점점 더 커가고 있다. 이러한 여건에도 불구하고 진공율 이용하는 system 개밟의 국산화는 수 입하는 system으$\mid$ 수에 비하여 절대적으로 부족하며, 또한 개발하는 system의 자동화는 거의 이 루어지지 않고 있으며, 자동화된 진공판련 system은 거의 대부분 수입에 의흔하고 있다. 실험 실 규모에서부터 System올 하나하나 개밭하고, 이톨 자동화하는 노력과 일이 진행됨다면 산업 응용에 있어서도 자연스럽게 자동화된 system으$\mid$ 개발이 이루어 질 것이다 .. system 자동화는 상 품수명의 단축과 이에 따른 다품종 소량을 요구하는 시장수요에 대응하고, 인력절감과 고풀짙 화로 생산성 향상의 요구에 대응하기 위하여 필요하다. 본 연 구에 서 는 e-beam evaporator로 evaporation하면 서 ion beam으로 assist하여 thin film율 제 작하는 IBAD vacuum system율 싫 계 및 제 작하고[1,2], PLC[3,떼톨 이 용하여 system 자동화톨 하였다 .. thin film 제작 process는 먼저 기본 진공상태로 만뚫고 난 뒤, e-beam evaporator로 e evaporation하면서 ion beam source로 assist하여 substrate 011 thin film율 제조한다 226;. thin film올 제 조하면서 thickness monitor로 sample의 thickness rate톨 control 하고, sample의 균얼성과 밀착 성을 고려하여 substrate톨 rotation 및 heating 할 수 있도록 싫계, 제작하였다. 양질의 박막올 제조하기 위해서 진공환경이 좋은 상태로 제공되어야 한다. 이톨 위하여 oil free operation 0 I 가 능한 dry pump와 turbo molecular pump로 고진공 배기 하였다. 진공도의 흑점은 thermal effect 툴 고려하여 cold cathode ion gauge률 사용하였고, intro chamber와 main chamber 사이에는 g gate valve톨 설치하여 벌도로 운용되도록 하였다. 이러한 process를 박막의 두께, 진공도, 시 간, 온도, 공정 동의 조건올 기훈으로 자동화한 것이다. 또한 정전과 단수에 대한 interlock 기능 도 고려하였다.하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.215-216
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• 2000

We fabricated the thin-film transistors using organic semiconductor, pentacene, on $SiN_x$, gate insulator. X-ray diffraction experiments were performed for the sample after heat-treatments at higher temperatures. We confirmed that we obtained "thin-film phase" from the condition used here. From the electrical measurements, we also confirmed that no charges are accumulated at the interface between organic and insulating layer, and FET characteristics of the organic FET using pentacene was discussed.