• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.137-143
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• 2011

The internal stress and magnetic properties (coercivity and squareness) of Ni-Fe nano thin film synthesized by electrodeposition method were studied as a function of acidic chloride bath conditions (composition and temperature) and current density. Fe deposition patterns were different depending on the temperature of the solution, the stress of film decreased with increasing the solution temperature, and the depending on the amount of Fe deposition showed a parabolic shape. The grain size of film was inversely proportional to stress of thin film. The internal stress of thin film and magnetic properties were deeply relevant, and the stress of thin film had a relationship with bath conditions and grain size of the thin film surface.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.237-242
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• 2001

Residual stress is a dominant obstacle to efficient production and safe usage of products by reducing the mechanical strength and failure properties. Especially, it causes interfacial failure and substrate deflection in the case of thin film. So, the exact evaluation and optimum control of thin film residual stress is indispensable. However, hole drilling or X-ray diffraction techniques have some limits in application to thin film. And, curvature technique for thin film materials cannot give the information about local stress variation. Therefore, we applied the nanoindentation technique in evaluating the thin film residual stress. In this study, we modeled the change of indentation loading curve for residually stressed and stress-free thin films during stress relaxation. The value of residual stress was directly related to the indentation depth change by relaxation. The residual stress from nanoindentation analysis was consistent with the result from curvature technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.135-141
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• 2003

MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8％ comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.8-13
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• 2020

Stress is the main cause of warpage failure of very thin substrates with thickness of several hundred ㎛, such as IC packages. Stress usually results from differences in crystal structures and corresponding thermal expansion coefficients when depositing different substances on a substrate. In this study, the behaviors of stress occurring in substrates were numerically analyzed by the thin-film pattern of the rectangles stacked on the substrates. First, the substrate displacement was obtained and the substrate strain and stress were obtained using it. When the tensile force is concentrated at the edge of the thin film pattern, normal and shear stresses are generated around the edge of the thin film pattern. Normal stress occurs near the edges of the thin film pattern and the vertexes. Shear stress also occurs around the edge of the thin film pattern, but unlike normal stress, it does not appear near the vertexes. It was also confirmed that the magnitude and direction of shear stress are changed around the edge. When edge forces of thin-film pattern are equal, the normal stress was about 10 times larger than the shear stress. This indicates that normal stress is the biggest cause of warpage failure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.7
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• pp.1270-1279
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• 2002

Residual stress is a dominant obstacle to efficient production and safe usage of device by deteriorating the mechanical strength and failure properties. Therefore, we proposed a new thin film stress-analyzing technique using a nanoindentation method. For this aim, the shape change in the indentation load-depth curve during the stress-relief in film was theoretically modeled. The change in indentation depth by load-controlled stress relaxation process was related to the increase or decrease in the applied load using the elastic flat punch theory. Finally, the residual stress in thin film was calculated from the changed applied load based on the equivalent stress interaction model. The evaluated stresses for diamond-like carbon films from this nanoindentation analysis were consistent with the results from the conventional curvature method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.531-537
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• 2006

A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.820-823
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• 2002

MEMS structures Generally have been fabricated using surface-machining, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to difference of linear coefficient of thermal expansion. Therefore this paper studied the effect of the residual stress caused by variable external loads. This study did not analyzed accurate quantity of the residual stress but trend for the effect of residual stress. Several specimens were fabricated using other material(Al, Au and Cu) and thermal load was applied. The residual stress was measured by nano-indentation using AFM. The results showed the existence of the residual stress due to thermal load. The indentation area of the thermal loaded thin film reduced about 3.5% comparing with the virgin thin film caused by residual stress. The finite element analysis results are similar to indentation test.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.303-310
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• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.355-358
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• 2003

To estimate the residual stresses in the thin film and surface coatings, combined method based on nanoindentation and finite element (FE) analysis was developed. A simple equation for estimating the residual stress was composed of the hardness and the parameters which can be driven from the nanoindentation loading and unloading behaviors. FE analysis on the nanoindentation procedure under the various residual stress levels was performed to determine the parameters that included in the equation. The equation showed a good coincidence between the estimated residual stresses and those for the FE analysis. Thus the proposed method was considered as a useful method for estimating the residual stresses in the thin film without stress free specimen.