Orientation Characteristics of AIN Thin Film using RF Magnetron Sputtering wish Incident Angle

입사각을 가진 RF 마그네트론 스퍼터링법으로 증착한 AIN 박막의 배향 특성

  • 박영순 (원광대학교 대학원 전자재료공학과) ;
  • 김덕규 (원광대학교 대학원 전자재료공학과) ;
  • 송민종 (광주보건대학 의공학과) ;
  • 박춘배 (원광대학교 전기 전자 및 정보공학부)
  • Published : 2000.07.01

Abstract

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

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