• Title/Summary/Keyword: thin metal

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Determination of Optical Constants and Thickness of Thin Metal Films by Measurement of Surface Plasmon Resonance (표면 플라즈몬 공명 측정에 의한 금속 박막의 광학 상수와 두께 결정)

  • 황보창권;최철재;최동철
    • Korean Journal of Optics and Photonics
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    • v.2 no.2
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    • pp.59-66
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    • 1991
  • Resonance angle and optimum thinckness of various thin metal films for surface plasmon resonance were calculated using an admittance diagram and optical constants and thickness of thin Ag films and Al films were determined by fitting the measured reflectance of surface plasmon resonance. Two wavelengths of an Ar ion laser were employed to select the unique optical constants which have the same thickness at two wavelengths. Also, when these films were exposed to the air, the shift of surface plasmon resonance was measured and the optical constants of modified thin films were determined.

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Crystallographic Relationships of (Ba, Sr) $TiO_3$Thin Film Prepared by Metal-Organic Chemical Vapor Deposition on (111) Textured Pt Electrode

  • Yoo, Dong-Chul;Lee, Jeong-Yong
    • Journal of the Korean Ceramic Society
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    • v.37 no.11
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    • pp.1126-1129
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    • 2000
  • The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

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Liquid Phase Deposition of Transition Metal Ferrite Thin Films: Synthesis and Magnetic Properties

  • Caruntu Gabriel;O'Connor Charles J.
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.703-709
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    • 2006
  • We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode (Metal 게이트 전극을 위한 TiN 박막의 건식 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il
    • Journal of Surface Science and Engineering
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    • v.42 no.4
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    • pp.169-172
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    • 2009
  • We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

Fabrication of a Micromachined Metal Thin-film Type Pressure Sensor for High Overpressure Tolerance and Its Characteristics (과부하 방지용 마이크로머시닝 금속 박막형 압력센서의 제작과 그 특성)

  • Kim, Jae-Min;Lim, Byoung-Kwon;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.192-196
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    • 2002
  • This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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NbTi Thin Film by RF Sputtering Method (RF Sputtering법에 의한 NbTi박막 제조연구)

  • Kim, Bong-Seo;Woo, Byung-Chul;Ha, Dong-Woo;Byun, Woo-Bong;Lee, Hee-Woong
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.212-214
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    • 1994
  • At recent time, superconducting technology makes it possible to develop various devices using strong magnetic fields. As increasing with devices using high magnetic fields, magnetic shielding technology is essential in order to get high efficiency. Therefore it is necessary to establish production method and clear characteristics of suitable shielding materials. Usually, ferromagnetic metal has been used for shielding of high magnetic fields up to the present time. Instead of heavy ferromagnetic metal, we can acquire better upgraded shielding system by using of very light superconducting thin film that has a perfect diamagnetism. We would like to study basic characteristics of NbTi thin film produced by RF sputtering, investigated morphology and crystal structure of NbTi thin film by SEM and XRD, identified superconductivity measuring by critical current.

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Enhanced Electrical Performance of SiZnSnO Thin Film Transistor with Thin Metal Layer

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.141-143
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    • 2017
  • Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

A Study on the Acoustic Properties of Acoustic Treansducer with PZT/Metal (PZT/Metal로 구성된 음향변환기의 음향특성에 관한 연구)

  • Kim, Jin-Soo;Kang, Dae-Ha;Kim, So-Jung;Kim, Ho-Gi;Lee, Deok-Chool
    • The Journal of the Acoustical Society of Korea
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    • v.11 no.2
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    • pp.28-37
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    • 1992
  • In the study, the Acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The 'tape casting method' was introduced to prepare the thin disc-type of piezoelectric ceramics. The acoustic characteristics of PZT/Metal acoustic transducer for piezoelectric buzzer and piezoelectric speaker etc. have been studied and analyzed. As a result, the sound pressure level (dB), in the range from -6dB to -14dB, increased with increasing the piezoelectric coeffeicient ($d_{31}$) of ceramics. The optimal conditions of the sound pressure characteristics of acoustic transducer were that the radius ratio(${\eta}$) of ceramics and metal plate is 0.7-0.8 and the thickness ratio(${\beta}$) is 1.0, and the value were -15~-165dB.

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Surface Modification of Li Metal Electrode with PDMS/GO Composite Thin Film: Controlled Growth of Li Layer and Improved Performance of Lithium Metal Battery (LMB) (PDMS/GO 복합체 박막의 리튬 금속 표면 개질: 리튬전극의 성장 제어 및 리튬금속전지(LMB) 성능 향상)

  • Lee, Sanghyun;Seok, Dohyeong;Jeong, Yohan;Sohn, Hiesang
    • Membrane Journal
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    • v.30 no.1
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    • pp.38-45
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    • 2020
  • Although Lithium metal battery (LMB) has a very large theoretical capacity, it has a critical problem such as formation of dendrite which causes short circuit and short cycle life of the LMB. In this study, PDMS/GO composite with evenly dispersed graphene oxide (GO) nanosheets in poly (dimethylsiloxane) (PDMS) was synthesized and coated into a thin film, resulting in the effect that can physically suppress the formation of dendrite. However, PDMS has low ion conductivity, so that we attained improved ion conductivity of PDMS/GO thin film by etching technic using 5wt% hydrofluoric acid (HF), to facilitate the movement of lithium (Li) ions by forming the channel of Li ions. The morphology of the PDMS/GO thin film was observed to confirm using SEM. When the PDMS/GO thin film was utilized to lithium metal battery system, the columbic efficiency was maintained at 87.4% on average until the 100th cycles. In addition, voltage profiles indicated reduced overpotential in comparison to the electrode without thin film.

Fiber-to-planar waveguide coupler with a thin metal intermediate layer (얇은 금속 중간층이 포함된 광섬유-평면도파로 결합기)

  • 김광택;윤대성;손경락
    • Korean Journal of Optics and Photonics
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    • v.14 no.4
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    • pp.355-358
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    • 2003
  • We report experimental results on the wavelength and polarization selective coupling properties of fiber-to-planar waveguide coupler having a thin metal intermediate layer. The influence of the metal layer thickness and the refractive index of the superstrate on the device properties has been measured and explained. The proposed device exhibited various application possibilities including polarizers, modulators, and sensors.