• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.696-698
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• 2011

We present a new method for the fabrication of film bulk acoustic wave resonator (FBAR) devices that exploits the thin piezoelectric ZnO films particularly sputter-deposited in a mixture of N2O and Ar gases as the reactive and sputtering gases, respectively. Some thermal annealing treatments were performed on the as-deposited ZnO films and also their effects on the resonance characteristics of the FBAR devices were investigated. It was found that with an optimized process, the resonance characteristics of the fabricated FBAR devices could be further improved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.437-440
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• 2007

This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2524-2526
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• 1998

In this paper, the residual stress and young's modulus of the p+ thin film have been estimated by using the electrostatic resonators. The electrostatic plate resonator with four corrugated bridges and another with four flat ones have been fabricated. The deflection of the plate has been calculated under the induced tension and the residual stress and compared with the dynamic test results. When the young's modulus of the p+ silicon is 125 GPa. The estimated residual stresses of the flat and the corrugated bridges are about 15 MPa and less than 5 MPa, respectively. It has been confirmed that the corrugated structure releases the residual tensile stress resulted from the heavy boron diffusion process.

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.97-98
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• 2017

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.299-304
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• 2012

A high angular tolerance spectral filter was realized incorporating an etalon, which consists of a $TiO_2$ cavity sandwiched between a pair of Ag/Ge mirrors. The effective angle was substantially extended thanks to the cavity's high refractive index. The device was created by embedding a 313-nm thick $TiO_2$ film in 16-nm thick Ag/Ge films through sputtering, with the Ge layer alleviating the roughness and adhesion of the Ag layer. For normal incidence, the observed center wavelength and transmission were ~900 nm and ~60%, respectively; throughout the range of $50^{\circ}$, the relative wavelength shift and transmission variation amounted to only ~0.06 and ~4%, respectively.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.10-13
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• 2020

High-quality superconducting coplanar waveguide (SCPW) resonators are crucial for developing superconducting quantum information devices and sensors. We designed quarter-wavelength SCPW resonators and fabricated the SCPW resonators using Nb thin film. The resonant characteristics were measured at T = 4.2 K, revealing the intrinsic quality factor and the coupling quality factor to be Qi = 4,784 and Qc = 17, 980, respectively. Our design and fabrication techniques would be very useful to develop a gate-tunable superconducting qubit based on the semiconductor nanostructures.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.959-961
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• 1999

ZnO thin films are deposited by using an RF magnetron sputtering system. Structural and electrical properties are analyzed as a function of deposition conditions, such as RF power, Ar/($Ar+O_2$) ratio, and substrate temperature. The c-axial growth of ZnO is observed to be preferable to the $SiO_2$/Si substrate, rather than the Si substrate. By adding the oxygen gas during deposition, the electrical resistivity of films is increased, but the c-axial growth is inhibited. A pizoelectric resonator of Al/ZnO/Al is also fabricated to estimate the electric-mechanical coupling coefficient($k^2$) of ZnO film. The value of $k^2$ obtained from our work is about 10.14 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.28-28
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• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.59-67
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• 2017

This paper proposes an asymmetric split-loop resonator with an outer square loop (ASLR-OSL), which can actively control terahertz wave transmission properties while maintaining a high-Q-factor of the asymmetric split-loop resonator (ASLR). An added outer square loop is designed to play the roles of both a metamaterial and a micro-heater, which can control the temperature through a directly applied bias voltage. A vanadium dioxide ($VO_2$) thin film, which exhibits an insulator-metal phase transition with temperature change, is used to control the transmission properties. The proposed ASLR-OSL shows transmission properties similar to those of the ASLR, and they can be successfully controlled by directly applying bias voltage to the outer square loop. Based on these results, an electrically controllable terahertz high-Q metamaterial could be achieved simply by adding a square loop to the outside of a well-known high-Q metamaterial.